Question is ⇒ In a JFET, the drain current is maximum when, Options are ⇒ (A) VGS = 0, (B) VGS is not zero but is slightly negative, (C) VGS is negative, (D) VGS is negative and equal to VDS, (E) , Leave your comments or Download question paper.

Question is ⇒ In a JFET, the drain current is maximum when, Options are ⇒ (A) VGS = 0, (B) VGS is not zero but is slightly negative, (C) VGS is negative, (D) VGS is negative and equal to VDS, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	In a JFET, the drain current is maximum when
A.	V_GS = 0 [Correct Answer]
B.	V_GS is not zero but is slightly negative [Wrong Answer]
C.	V_GS is negative [Wrong Answer]
D.	V_GS is negative and equal to V_DS [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ In a uniform plane wave E and H are related by
E/H = 1
E/H = ε/μ
E/H = μ/ε
none of the above

⇒ For holding the drain current constant in spite of large changes in JFET parameters
current source bias is used
voltage divider bias is used
reverse bias is used
no bias is used

⇒

Assertion (A): Two equal and opposite travelling waves result in a standing wave.

Reason (R): The ratio of maximum to minimum value of a standing wave is called SWR.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ The behaviour of a JFET is similar to that of
NPN transistor
PNP transistor
SCR
Vacuum triode

⇒ Consider the following statements about an array in Pascal

An array has a fixed predetermined number of components.
Any component of an array can be accessed using an index.
An array variable name refers to a group of quantities by a single name.
When array variables are used an appropriate declaration is required.

Which of the above are correct?
All
1, 2, 3 only
2, 3, 4 only
1, 2 and 4 only

⇒ The total insulation resistance consists of insulation volume resistance and surface leakage resistance.
TRUE
FALSE

⇒ A FM signal with modulation index M_f is passed through a frequency doubler. The wave in the output of the doubler will have modulation index of
M_f
M_f/2
2M_f
UM_f

⇒ When a p-n Junction is forward biased
the current flow is due to electrons only
the majority carriers in both p and n materials are driven toward the junction.
the majority carriers in both p and n materials are away from the junction.
both (a) and (c).

⇒

Assertion (A): A Smith chart can be used for a number of calculations of a transmission line

Reason (R): Smith chart is basically a polar impedance diagram.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ In the signal flow graph of the given figure, the number of forward path
1
2
3
4

⇒ Which of these instrument does not have a control spring?
Moving iron ammeter
PMMC ammeter
Electrostatic voltmeters
Power factor meter

⇒ When x(n) is real then the Fourier series coefficients are correlated as __________ .
a_-k = a_k^*
a_k = ak^*
a_k+1 = a_k_*
a_-k+1 = a_k^*

⇒ When the carrier is unmodulated, a certain transmitter radiates 9 kW when the carrier is sinusoidally modulated the transmitter radiates 10.125 kW. The modulation index will be
0.1
10.15
0.4
0.5

⇒ As temperature increases the forbidden gap in silicon increases.
TRUE
FALSE

⇒ Which of the following is used as switch?
J-K flip-flop
Master slave J-K flip-flop
T-flip-flop
D-flip-flop

⇒ If E is energy level of electron and E_F is Fermi level, then
all quantum states with E less than E_F will be occupied at T = 0
all quantum states with E less than E_F will be empty at T = 0
some quantum states with E less than E_F will be occupied at T = 0
none of the above

⇒ The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
1.5 V
2.5 V
3.5 V
4.5 V

⇒ Which of the following computer memories is fastest?
Cache
Primary
Mass storage
Off line back up

⇒ If transfer function of a system is H(z) = 6 + z^-1 + z^-2 then system is
minimun phase
maximum phase
mixed phase
none

⇒ The communication satellite INSAT-IB had to take up the job of INSAT-IA because the latter collapsed within __________ months of its launch.
12
20
5
36

⇒ The most commonly used magnetron is
cylindrical
parallel plate
inclined plate
flat plate

⇒ The capacity of a battery is expressed in terms of
current
voltage
none of these
current and voltage

⇒ For 200V r.m.s. value triangular wave, the peak voltage will be
200 V
222 V
280 V
346 V

⇒

Assertion (A): CMOS devices have very low power consumption

Reason (R): CMOS devices have high noise margin.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true

⇒ Loading of a line means
increasing inductance of line
increasing distributed inductance of line
decreasing distributed inductance of line
decreasing inductance of line

⇒ A frequency multiplier stage should operate as
class A
class B
class AB
class C

⇒ Addition of 0.3 to 3.5% silicon to iron
increases the electrical resistivity of iron
decreases the electrical resistivity of iron
does not change electrical resistivity of iron
silicon can't be added with iron

⇒ SSB stands for
Single Side Band
Suppressed Side Band
Single Sound Band
Single Sky Band

⇒ In floating point representation decimal number 13.5 is
1101.1
1.1011 x 2³
0.11011 x 2⁴
11.011 x 2²

⇒ Maximum power from a source having internal resistance R_i is delivered to a resistive load R_L, if
R_i > R_L
R_i < R_L
R_i = R_L²
R_i = R_L