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Q1. | The source of which of the following noise is different from that of the remaining? |

A. | Solar noise [Wrong Answer] |

B. | Cosmic noise [Wrong Answer] |

C. | Galactic noise [Wrong Answer] |

D. | Atmospheric noise [Correct Answer] |

View Answer
Explanation:-
Answer : DDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ 25 persons are in a room. 15 of them play hockey, 17 of them play football and 10 of them play both hockey and football. Then the number of persons playing neither hockey nor football is:

2

17

13

3

⇒ The coefficients F

_{n}in the exponential form of Fourier series are

independent of frequency

functions of frequency

even function of frequency

odd functions of frequency

⇒ An instrument of accuracy class 1 can have an error equal to

+ 1% of reading

± 1% of reading

± 1% of full scale deflection

+ 1% of full scale deflection

⇒ In radar systems PRF stands for

Power Return Factor

Pulse Return Factor

Pulse Repetition Frequency

Pulse Response Factor

⇒ Drain feedback bias is often used with

D MOSFETs

E MOSFETs

both D and E MOSFETs

neither D nor E MOSFETs

⇒ For the wave shown in figure, the average valu

14.14 A

15 A

17.17 A

19.19 A

⇒ The purpose of using negative feedback in a op-amps is to

stabilize overall gain

increase output

stabilize overall gain and increase output

increase output and decrease input

⇒ An electron rises through a voltage of 100 V. The energy acquired by it will be

100 eV

100 joules

(100)

^{1.2}eV

(100)

^{1.2}joules

⇒ In 8085

all operations are on 8 bit data

majority of operations are on 8 bit data

all operations are on 8 bit or 4 bit data

either (a) or (c)

⇒ In a TWT the axial component of electric field advances along the tube

at a velocity that is almost equal to speed of light

at a velocity that is a small fraction of speed of light

at a velocity that is about 50% of speed of light

at a velocity that may be even more than speed of light

⇒ As temperature increases the forbidden gap in silicon increases.

TRUE

FALSE

⇒ It is required that a strain gauge has gauge factor of 100. The proper strain gauge is

constantan strain gauge

nichrome strain gauge

semiconductor strain gauge

alloy strain gauge

⇒ A function of one of more variables which conveys information on the nature of physical phenomenon is called

Noise

Interference

System

Signal

⇒ Fibers have numerical aperture (

*NA*) in the range of 0.15 to 0.4 Fibers with higher

*NA*value would have

reduced losses

high bandwidth

reduced losses and low bandwidth

more losses and low bandwidth

⇒ Power is drawn from a source at power factor 0.7. P

_{av}= 300 watt. The reactive power is

0

105

100 VA

107 VA

⇒ According to maximum power transfer theorem, if the load is inductive, the source should be

inductive

capacitive

resistive

any of the above

⇒ For the network in figure, the correct loop equation for loop

-I

_{1}+ 4I

_{2}+ 11I

_{3}= 0

I

_{1}+ 4I

_{2}+ 11I

_{3}= 0

-I

_{1}- 4I

_{2}+ 11I

_{3}= 0

I

_{1}- 4I

_{2}+ 6I

_{3}= 0

⇒ 74HCT00 series is

NAND IC

interface between TTL and CMOS

inverting IC

NOR IC

⇒ Two identical NMOS transistors M

_{1}and M

_{2}are connected as shown below. V

_{bias}is chosen so that both transistors are in saturation. The equivalent

*g*of the pair is defined t

_{m}the sum of individual

*g*'s of the transistors

_{m}the product of individual

*g*'s of the transistors

_{m}nearly equal to the

*g*of M

_{m}_{1}

nearly equal to

*g*/

_{m}*g*

_{0}of M

_{2}

⇒ When an electron rises through a potential of 100 V it will acquired an energy of

100 eV

100 Joules

100 ergs

100 x 10

^{-6}Newtons

⇒

Match the following:

List I (Signal) | List II (Value) | ||
---|---|---|---|

A. | AM | 1. | 0 0.5 |

B. | DSB - SC | 2. | 1 |

C. | SSB | 3. | 2 |

D. | FM (β = 2) | 4. | 16 |

E. | FM (β = 5) | 5. | 8 |

A-1, B-3, C-2, D-5, E-4

A-3, B-3, C-1, D-5, E-4

A-2, B-1, C-4, D-5, E-5

A-4, B-2, C-5, D-3, E-1

⇒ The application of gate signal decreases the break over voltage of on SCR.

TRUE

FALSE

⇒ A 4 input AND gate is equivalent to

4 switches in parallel

2 switches in series and 2 in parallel

three switches in parallel and one in series

4 switches in series

⇒ In the above case the total power in the modulated wave double sideband, suppressed carrier AM will be

112 W

400 W

415 W

512 W

⇒ In the given figure the E and H lines in a coaxial c

The radial lines are E lines and circular lines are H lines

Radial lines are H lines and circular lines are E lines

The directions of E and H lines are wrong

Radial lines may be E and H lines depending an direction of current

⇒ The voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit) is 25 volts. The maximum voltage on the reverse biased diode will be

100 V

50 V

25 V

12.5 V

⇒ When a

*p*-

*n*junction is reverse biased

holes and electrons move away from the junction

holes and electrons move towards the junction

holes move towards junction and electrons move away from junction

holes move away from junction and electrons move towards junction

⇒ The operating modes of 8255 A are called

mode 0 and mode 1

mode 0, mode 1 and mode 2

mode 0 and mode 2

mode 0, mode 2 and mode 3

⇒ A current increasing at the rate of 1 A/s is passed through 1 F capacitor. At

*t*= 0,

*i*= 0. The charge stored after 1 second is

0.5 C

1 C

2 C

4 C

⇒ For a diamagnetic material, μ

_{r}= 1.

TRUE

FALSE