Question is ⇒ Figure is a 24 Vr stabilized power supply. The zener is 24 V, 600 mW. The minimum zener current is 10 mA. Proper values R and maximum load current, Options are ⇒ (A) 320 Ω, 10 mA, (B) 400 Ω, 15 mA, (C) 400 Ω, 10 mA, (D) 320 Ω, 15 mA, (E) , Leave your comments or Download question paper.

Question is ⇒ Figure is a 24 Vr stabilized power supply. The zener is 24 V, 600 mW. The minimum zener current is 10 mA. Proper values R and maximum load current, Options are ⇒ (A) 320 Ω, 10 mA, (B) 400 Ω, 15 mA, (C) 400 Ω, 10 mA, (D) 320 Ω, 15 mA, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Figure is a 24 V_r stabilized power supply. The zener is 24 V, 600 mW. The minimum zener current is 10 mA. Proper values R and maximum load current
A.	320 Ω, 10 mA [Wrong Answer]
B.	400 Ω, 15 mA [Wrong Answer]
C.	400 Ω, 10 mA [Wrong Answer]
D.	320 Ω, 15 mA [Correct Answer]
View Answer 1 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ The simplified logic expression for the circuit of the given figur
Y = A
Y = AB
Y = A + B
Y + A + B

⇒ In a communication receiver, a squelch circuit is normally inserted
before detector
after detector
before mixer
after power amplifier

⇒ In 8085 the term 'absolute addressing' means
Direct addressing
Immediate addressing
Register addressing
Register indirect addressing

⇒ An iron specimen has µ_r = 1000 when B = 0.3 T. If B = 0.35 T, µ_r
will be 1000
will be less than 1000
will be more than 1000
may be more or less than 1000

⇒ The assigned carrier frequency of an FM broadcast station is 96.3 MHz. Its FM signal has a centre frequency of
10 MHz
455 kHz
48.15 MHz
96.3 MHz

⇒ Transverse electric (TE) waves have
electric field component E in the direction of propagation
magnetic field component H in the direction of propagation
magnetic field component H in the direction of propagation and no component of electric field E in this direction
electric field component E in the direction of propagation and no component of magnetic field H in this direction

⇒ For the network of figure, z_{115/3 Ω
3/2 Ω
2 Ω
2/3 Ω}

⇒

Assertion (A): In an R-L circuit having low resistance, current lags the voltage by nearly 90°.

Reason (R): Power factor of a series RL circuit is R/Z.

Both A and R are true and R is correct explanation of A
Both A and R are true and R is not the correct explanation of A
A is true but R is false
A is false but R is true

⇒ The normal operation of JFET is
constant voltage region
constant current region
both constant voltage and constant current regions
either constant voltage or constant current region

⇒ An FM signal has modulating frequency f_m and maximum frequency deviation of δ. The bandwidth will be nearly equal to
δ
2 δ
2f_m δ
f_m δ

⇒ Which mode is usually preferred for cascading?
CE
CB
CC
Any of the above

⇒ The use of thermocouple meters for ac measurement leads to a scale which is
linear
square law
logarithmic
exponential

⇒ 50 independent low pass signals of bandwidth W, 2W, 3W, W, 2W, 3W, W, 2W, 3W Hz are to be time division multiplexer on a common channel using PAM. To achieve this, the minimum transmission capacity of the channel should be __________ .
1 Hz
12 Hz
3 Hz
6 Hz

⇒ Master control facility (MCF) for INSAT-2 series satellites is located at
Madras
New Delhi
Leh
Hassan

⇒ In figure, the time constant for the capacitor chargin
6 μs
10 μs
15 μs
25 μs

⇒ The maximum counting range of a four stage counter using IC 74193 is
0 to 1023
0 to 4093
0 to 65535
0 to 131071

⇒ CD4010 is a
inverting buffer
non-inverting hex buffer
NOR IC
NAND IC

⇒ The ripple factor from a capacitor filter __________ as the load resistance __________ .
decreases, decreases
decreases, increases
increases, decreases
increases, increases

⇒ In the 8421 BCD code, the decimal number 125, is written as
1111101
0001 0010 0101
7 D
none of these

⇒ Consider the following statements

Usable bandwidth of ridge wave guide is more than that of rectangular waveguide.
For a given value of TM₁₀ cutoff frequency the cross section of ridge wave guide is lesser that that of rect angular waveguide.
Ridge wave guide has higher conductor losser than a rectangular waveguide.
Ridge guide has higher conductor losser than a rectangular waveguide.

Which of the above statements are correct?
1 and 2 only
1, 2 and 3 only
2 and 3 only
All

⇒ When a reverse bias is applied to a p-n junction, the width of depletion layer.
decreases
increases
remains the same
may increase or decrease

⇒

Assertion (A): A two byte instruction of 8085 has an operation code in first byte and operand / address in the second byte.

Reason (R): If an instruction is too long it is possible to reduce its length by a number of methods.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct R is wrong
A is wrong R is correct

⇒ Pirani gauge is used to measure
very low pressure
high pressure
pressure in the range of 1 atmosphere
fluid flow

⇒ Which of the following is true about an impulse voltage?
It is a unidirectional voltage
Chopped impulse flashover does not occur
Time taken to rise is equal to time taken to fall
RMS value is always less than 50% of average value

⇒ The decimal equivalent of the hexadecimal number E 5 is
279
229
327
0

⇒ A full wave bridge rectifier is supplied voltage at 50 Hz. The lowest ripple frequency will be
400 Hz
200 Hz
100 Hz
50 Hz

⇒ In TE₁₀mode the largest electric field in a rectangular wave guide, occurs
along centre line of broad wall (i.e. x = a/2)
along the broad wall (i.e. x = 0 and x = a)
either (a) or (b)
neither (a) nor (b)

⇒ In case of static storage elements
information is permanently stored
information is to be periodically refreshed
information is to be intermittently refreshed
information is lost in case power is removed

⇒ The gain of an half wavelength antenna is
2.15 dB
10 dB
1.78 dB
100 dB

⇒ For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
surface potential is equal to Fermi potential
surface Potential is greater than Fermi potential
surface potential is - ve and equal to Fermi potential in magnitude
surface potential is + ve and equal to twice the Fermi potential