Consider the following statements regarding an antenna:
| |
A. | 1, 2 and 3 [Correct Answer] |
B. | 1, 2 and 4 [Wrong Answer] |
C. | 2 and 3 only [Wrong Answer] |
D. | 1 and 4 only [Wrong Answer] |
View Answer
Explanation:-
Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
⇒
Assertion (A): If a carrier is modulated by three sine waves and m_{1}, m_{2}, m_{3} are the modulation indices, the total modulation index m_{t}
Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct
⇒ In figure the diode is ideal (zero cut in voltage zero forward resistance). Then the current through diod
0
0.166666666666667
0.0416666666666667
none of the above
⇒ Which of the following voltmeters would you use for measuring voltage across 20 kΩ resistance?
Voltmeter having a resistance of 5 kΩ
Voltmeter having a sensitivity of 1 kW/V
Voltmeter having sensitivity of 10 kW/V
None of the above
⇒ For a system with transfer funct
2.828
5.2915
5.088
cannot be determined
⇒ Hall effect can be used to find the type of semiconductor.
TRUE
FALSE
⇒ In the circuit of fi
V_{a} would always lag V_{b}
V_{a} would always lead V_{b}
V_{a} and V_{b} can be in phase
phase angle between V_{a} and V_{b} would always be 90°
⇒ Maximum power transfer theorem is applicable to circuits with one source only.
TRUE
FALSE
⇒ In figure, the current after a long time after closing of switc
0.0416666666666667
0.0833333333333333
0
infinity
⇒ Which statement is incorrect for the signal x(t) = 5 sin (2p x 10^{3}t) sin (2p x 10^{6}t)?
Upper side band frequency is 1001000
Carrier amplitude is 5
Lower sideband frequency is 990000
x(t) is DSB-SC
⇒ In the given circuit, viewed from AB, the circuit can be reduced to an equivalent circui
5 volts source in series with 10 Ω resistor
7 volts source in series with 2.4 Ω resistor
15 volts source in series with 2.4 Ω resistor
1 volt source in series with 10 Ω resistor
⇒ A 4 bit ripple counter uses flip flops with propagation delay of 50 ns each. The maximum clock frequency which can be used is
5 MHz
10 MHz
20 MHz
25 MHz
⇒ A single phase semiconverter is feeding a highly inductive load. The circuit has a freewheeling diode across the load and firing angle is a. During one cycle of input voltage, the total duration of conduction of freewheeling diode is
a
2 a
4 a
0.5 a
⇒ For a type 0 system and unit ramp input, the steady state error is
0
∞
1
1/K_{V}
⇒
Assertion (A): A multiplexer can be used for data routing.
Reason (R): A multiplexer has one input and many outputs.
Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true
⇒ When a UJT is used as a relaxation oscillator the current should be
less than I_{p}
more than I_{v}
more than I_{p} but less than I_{v}
negative
⇒ If f(- t) = f(t), the function f(t) has only cosine terms.
TRUE
FALSE
⇒
Match the following:
List I | List II | ||
---|---|---|---|
A. | Mu Metal | 1. | very high magnetic permeability |
B. | Samrium/cobalt | 2. | very high magnetic remanence |
C. | Sapphire | 3. | very high thermal conductivity |
D. | Ferrites | 4. | very stable magnetic permeability |
A-1, B-2, C-3, D-4
A-3, B-4, C-1, D-2
A-2, B-3, C-4, D-1
A-4, B-1, C-2, D-3
⇒ NMOS devices have __________ switching speeds and __________ on-state resistance; as compared with PMOS devices.
slower, higher
faster, lower
faster, higher
slower, lower
⇒ The degree of the nodes 1, 2, 3,
2
3
2 for 1, 2, 3, and 3 for 4
all 3
⇒ Consider the CMOS circuit shown, where the gate voltage V_{G} of the n-MOSEFT is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistor, the magnitude of the threshold voltage is 1 V and the product of the transconductor parameter and the (W/L) ratio, i.e. the quality μC_{0x}(W/L), is 1mA. V^{-2Both the MOSFET are in saturation regionBoth the MOSFET are in triode regionn-MOSFET is in triode and p-MOSFET is in saturation regionn-MOSFET is in saturation and p-MOSFET is in triode region}
⇒ Maximum power from a source having internal resistance R_{i} is delivered to a resistive load R_{L}, if
R_{i} > R_{L}
R_{i} < R_{L}
R_{i} = R_{L}^{2}
R_{i} = R_{L}
⇒ In the given figure reflection coefficient at loa
0.6
-0.6
0.4
-0.4
⇒ When transistor is used as a switch __________ is defined as the interval which elapses between the transition of input waveform and the time when to transition to 90% of I_{c(sat)}.
storage time
fall time
turn-on time
turn-off time
⇒ Read the following statements: Dual slope ADC provides
- higher speed as compared to other ADC
- very good accuracy
- good rejection of power supply
- better resolutions compared to other ADC for the same number of bits
1 and 2
2 and 3
1, 2, 3
1, 2, 3, 4
⇒ In binary data transmission DPSK is preferred to PSK because
a coherent carrier is not required to the generated at the receiver
for a given energy per bit, the probability for zero is less
the 180° phase shifts of the carrier
more protection is provided against impulse noise
⇒ In a driving point function poles and zeros must be conjugate if complex or imaginary.
TRUE
FALSE
⇒ Two coils having equal resistance but different inductances are connected in series. The time constant of the series combination is
average of the time constants of individual coils
sum of the time constants of the individual coils
geometric mean of the time constants of individual coils
product of the time constants of the individual coils
⇒ In 8355, the ROM is organized as __________ words of 8 bits each.
2000
2048
8355
835
⇒ An ideal power supply has
zero internal resistance
very high internal resistance
high output resistance
both (b) and (c)
⇒ In RLC circuits the state variables generally selected are
voltages across capacitors
currents through resistances and voltages across capacitors
currents through resistances and capacitances
currents through inductances and voltages across capacitances