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Q1. | The reflection coefficient on a 500 m long transmission line has a phase angle of - 150°. If the operating wavelength is 150 m, what will be the number of voltage maxima on the line? |

A. | 0 [Wrong Answer] |

B. | 3 [Wrong Answer] |

C. | 6 [Correct Answer] |

D. | 7 [Wrong Answer] |

View Answer
Explanation:-
Answer : CDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ Which of the following conditions must be satisfied for a transistor to remain under saturation?

- Its collector to base junction should be under forward bias.
- Its collector to base junction should be under reverse bias.
- Its emitter to base junction should be under reverse bias.
- Its emitter to base junction should be under forward bias.

1 and 2

1 and 3

2 and 3

1 and 4

⇒ Consider the CMOS circuit shown, where the gate voltage V

_{G}of the n-MOSEFT is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistor, the magnitude of the threshold voltage is 1 V and the product of the transconductor parameter and the (W/L) ratio, i.e. the quality μC

_{0x}(W/L), is 1mA. V

^{-2Both the MOSFET are in saturation regionBoth the MOSFET are in triode regionn-MOSFET is in triode and p-MOSFET is in saturation regionn-MOSFET is in saturation and p-MOSFET is in triode region}

⇒ For the system with given characteristic equat

3, 2, 0

4, 0, 1

3, 0, 2

4, 1, 0

⇒ If load impedance Z

_{L}>> Z

_{0}, then

Z

_{0}= Z

_{L}(VSWR)

Z

_{L}= Z

_{0}(VSWR)

Z

_{L}= Z

_{0}(VSWR - 1)

Z

_{L}= Z

_{0}VSWR

⇒ Performance of a PIN diode switch is represented by

insertion loss when switch is off

insertion loss when switch is on

insertion loss when switch is on and isolation loss when switch is off

insertion loss when switch is off and isolation loss when switch is on

⇒ The amplifier circuit shown below uses a silicon transistor. The capacitors C

_{c}and C

_{E}can be assumed to be short at signal frequency and the effect of output resistance

*r*

_{0}can be ignored. If C

_{E}is disconnected from the circuit, which one of the following statements is T

The input resistance R

_{i}increases and the magnitude of voltage gain A

_{v}decreases

The input resistance R

_{i}decreases and the magnitude of voltage gain A

_{v}decreases

Both input resistance R

_{i}and the magnitude of voltage gain A

_{v}decrease

Both input resistance R

_{i}and the magnitude of voltage gain A

_{v}increase

⇒ Which one of the following is valid integer variable in FORTRAN 77?

`BRG`

`IBRG`

`VS`

`PEC`

⇒ For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

100 mW

250 mW

450 mW

600 mW

⇒ The characteristic impedance of coaxial cable is about

1000 ohm

500 ohm

250 ohm

75 ohm

⇒ A differential amplifier is invariably used in the I/P stage of all OP-amps. This is done basically to produce the OP-amp with a very high.

CMRR

bandwidth

slew rate

open-loop gain

⇒ When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its

*g*

_{m}equals

10 μμ

100 μμ

1000 μμ

10000 μμ

⇒ The following program starts at location 0

20 H

02 H

00 H

FFH

⇒ A microprocessor uses 3 MHz oscillator. The duration of one T state is

1 μ

*s*

0.666 μ

*s*

0.333 μ

*s*

3 μ

*s*

⇒ In a JFET

the source gate junction is forward biased and gate drain junction is reverse biased

both the junctions are forward biased

both the junctions are reverse biased

the source gate junction is reverse biased and gate drain junction is forward biased

⇒ The circuit of the given figure realizes the func

Y = (A + B) C + DE

Y = A + B + C + D + E

AB + C +DE

AB + C(D + E)

⇒ When the video signal is applied to the picture tube in a TV receiver, the strength of video signal is about

1000 V

200 V

50 V

1 V

⇒ In a

*p*type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be

0.5 eV above valence band

0.28 eV above valence band

0.1 eV above valence band

below the valence band

⇒ The noise figure of individual stages of a two stage amplifier is 2.03 and 1.54 respectively. If gain of first stage is 62, the overall noise figure is

2.03

2.055

3.05

6.05

⇒ Which of the following has highest conductivity?

Silver

Aluminium

Tungsten

Platinum

⇒ The input to integrating op-amp is a rectangular wave. The output will be

a sine wave

a rectangular wave

a triangular wave

none of the above

⇒ Intrinsic concentration of charge carriers in a semiconductor varies as

T

T

^{2}

T

^{3}

T

^{-2}

⇒ One electron volt is equivalent to

1.6 x 10

^{-10}joule

1.6 x 10

^{-13}joule

1.6 x 10

^{-16}joule

1.6 x 10

^{-19}joule

⇒ Consider the following statements as regards pulse repetition frequency

- Pulse interval should be as large as possible so that a pulse returns before next pulse is transmitted
- Greater the number of pulses reflected from a target, greater is the probability of distinguishing it from the noise

1 only

2 only

both 1 and 2

neither 1 nor 2

⇒ End fire coupler is formed

when two equal radiators are operated in phase quadrature at a distance of λ/4 apart

when two equal radiators are operated in parallel at a distance of λ/4 apart

when two equal radiators are operated in phase quadrature at a distance of λ/2 apart

none of the above

⇒ The voltage gain of which transistor configuration is less than unity?

CB

CE

CC

None

⇒ The Fourier series representation of a periodic current (2 + 62 cos ω

*t*+48 sin 2ω

*t*) A. The effective value is

(2 + 6 + 24) A

0.333333333333333

0.25

0.0833333333333333

⇒ Consider the following statements

- An iron cored choke is a nonlinear device.
- A carbon resistor kept in a sunlight is a time - invariant and passive device.
- A dry cell is a time - varying and active device.
- An air capacitor is a time - invariant and passive device

1, 2, 3 and 4 are correct

1, 2 and 3 are correct

1, 2 and 4 are correct

2 and 4 are correct

⇒

Match the following:

List I (Operator) | List II (Description) | ||
---|---|---|---|

A. | ! = | 1. | Left shift |

B. | = = | 2. | Right Shift |

C. | < < | 3. | Equal to |

D. | > > | 4. | Not equal to |

A-1, B-2, C-3, D-4

A-2, B-3, C-4, D-1

A-4, B-1, C-3, D-2

A-4, B-3, C-1, D-2

⇒

Match the following:

List I (Library function in Pascal) | List II (Type of argument) | ||
---|---|---|---|

A. | ROUND X | 1. | X in radians |

B. | ABS X | 2. | X real |

C. | SQR X | 3. | X real or integer |

D. | SIN X |

A-2, B-3, C-3, D-1

A-2, B-3, C-1, D-3

A-3, B-2, C-2, D-1

A-2, B-3, C-2, D-1

⇒ The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of

1.5 V

2.5 V

3.5 V

4.5 V