Question is ⇒ The depletion type MOSFET can operate in, Options are ⇒ (A) depletion mode only, (B) enhancement mode only, (C) depletion or enhancement mode, (D) neither depletion nor enhancement mode, (E) , Leave your comments or Download question paper.

Question is ⇒ The depletion type MOSFET can operate in, Options are ⇒ (A) depletion mode only, (B) enhancement mode only, (C) depletion or enhancement mode, (D) neither depletion nor enhancement mode, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The depletion type MOSFET can operate in
A.	depletion mode only [Wrong Answer]
B.	enhancement mode only [Wrong Answer]
C.	depletion or enhancement mode [Correct Answer]
D.	neither depletion nor enhancement mode [Wrong Answer]
View Answer 2 -3 Explanation:- Answer : C Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ A generated voltage is equally dependent on three resistances R₁, R₂, R₃ and its value is V = (R₁R₂)/R₃. If tolerance of each resistor is 0.1%, the maximum error in voltage is
0.003
± 0.3%
0.001
± 0.1%

⇒ For the circuit shown in the figure, what is the frequency of the outpu
Twice the input clock frequency
Half the input clock frequency
Same as input clock frequency
Inverse of the propagation delay of the FF

⇒ In a BJT amplifier circuit the size of coupling capacitor depends on
lowest frequency
highest frequency
average of lowest and highest frequencies
none of the above

⇒ Consider the following statements regarding registers and latches:

Registers are made of edge-triggered FFs, whereas latches are made from level-triggered FFs.
Registers are temporary storage devices whereas latches are not.
A latch employs cross-coupled feedback connections.
A register stores a binary word whereas a latch does not.

Which of the above statements is/are correct?
1 only
1 and 3
2 and 3
3 and 4

⇒ The number of cells in a 4 variable K map is
16
8
4
32

⇒ The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T = 300 K, electronic charge = 1.6 x 10^-19C, thermal voltage = 26mV and electron mobility = 1350 cm²
2.16 x 10⁴ A/cm²
1.08 x 10⁴ A/cm²
4.32 x 10³ A/cm²
6.48 x 10² A/cm²

⇒ In the circuit of figure the current through 5 Ω resistance at t = 0^{+0.166666666666667
2.5 A
3.1 A
0}

⇒ The number of digits in hexadecimal system
15
16
10
8

⇒ Which of the following statement about the advantage of phase discriminator over the slope detector is false?
Fewer tuned circuits
Better linearity
Greater limiting
Much easier alignment

⇒ The divergence of a vector is a scalar, while the curl of a vector is another
scalar
vector
unit vector
none of the above

⇒ Which of the following laws of electromagnetic theory is associated with the force experienced by two loops of a wire carrying currents?
Maxwell's law
Coulomb's law
Ampere's law
Laplace's law

⇒ Select the correct relation
∇(AB) = A ∇ B + B ∇ A
∇ . (AB) = ∇ A . B + A ∇ B
∇ x (AB) = ∇ A x B + A ∇ B
All of the above

⇒ In the circuit shown, the device connected to Y5 can have address in the r
2000 - 20FF
2D00 - 2DFF
2E00 - 2EFF
FD00 - FDFF

⇒ An AND gate has two inputs A and B and one inhibit input 3, Output is 1 if
A = 1, B = 1, S = 1
A = 1, B = 1, S = 0
A = 1, B = 0, S = 1
A = 1, B = 0, S = 0

⇒ In figure the current through resist
is always equal to 130 mA
may vary between 130 mA and 10 mA
may vary between 65 mA and 10 mA
is always equal to 65 mA

⇒

Match the following:

	List I		List II
A.	Resistance	1.	M^-1L^-2T⁴I²
B.	Inductance	2.	ML²T^-2I^-2
C.	Capacitance	3.	ML²T^-3I²

A-1, B-2, C-3
A-2, B-1, C-3
A-2, B-3, C-1
A-3, B-2, C-1

⇒ The dielectric losses do not depend on frequency.
TRUE
FALSE

⇒ In a CE amplifier the output coupling capacitor is short circuited. The dc collector voltage
will increase
may increase or decrease
will remain the same
will decrease

⇒

Match the following:

	List I (Types of transmission structure)		List II (Modes of propagation)
A.	Strip line	1.	Quasi TEM
B.	Hollow rectangular waveguide	2.	Pure TEM
C.	Microstrip	3.	TE/TM
D.	Corrugated waveguide	4.	Hybrid

A-2, B-1, C-3, D-4
A-4, B-1, C-3, D-2
A-2, B-3, C-1, D-4
A-4, B-3, C-1, D-2

⇒

Match the following:

	List I		List II
A.	Serial Binary adder	1.	(2n - 1)t_pd
B.	Ripple carry adder	2.	(n - 1)t_pd
C.	Carry look ahead binary adder	3.	Operation time independent of size
		4.	6t_pd for 4 bit carry look ahead adder

A-2, B-1, C-3
A-2, B-1, C-4
A-1, B-2, C-4
A-1, B-2, C-3

⇒

Assertion (A): Power drain of CMOS increases with operating frequency

Reason (R): All unused CMOS inputs should be tied either to a fixed voltage level (0 or V_DD) or to another input.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true

⇒ The derating factor, for ambient temperature higher than specified, for a transistor is about
2.5 mW/°C
0.5 mW/°C
10 mW/°C
20 mW/°C

⇒ In figure, the switch S is initially open and steady state conditions are reached. At t = 0 switch is closed. The initial current through 2C capacito
zero
0.0416666666666667
0.0833333333333333
0.125

⇒ A generator with an internal resistance of 600 Ω drives an amplifier whose input resistance is 400 Ω. The generator's open circuit voltages is 1 mV; the amplifier develops 100mV across an 8kΩ load. The voltage multiplication is
25
50
125
250

⇒ RTD is generally suitable for temperature up to
about 800°C
about 1500°C
about 200°C
about 50°C

⇒ The deflection of a DArsonval galvanometer is measured through a mirror and scale. The mirror is 1 m away from the light source. The mirror is mounted on, the moving system. If mirror rotates through 0.2 rad the displacement on the scale is
0.2 m
0.4 m
0.1 m
0.05 m

⇒

Assertion (A): The modified ramp function of the given figure can be represented s sum of two ramp functions of the given fig
Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true

⇒ For the circuit shown in the figure, the capacitor C is initially uncharged. At t = 0, the switch S is closed. The voltage V_c across the capacitor at t = 1 millisecond is (In the figure shown above, the op-amp is supplied with ± 15 V and the ground has been shown by the sym
0 V
6.3 V
9.45 volts
10 volts

⇒ For the output F to be 1 in the logic circuit shown, the input combination shoul
A = 1, B = 1, C = 0
A = 1, B = 0, C = 0
A = 0, B = 1, C = 0
A = 0, B = 0, C = 1

⇒ Which one of the following cannot be used to remove the unwanted sideband in SSB?
Balanced modulator
Phase shift method
Filter system
Third method