Question is ⇒ The process of deliberately adding impurity to a semi-conductor material is called, Options are ⇒ (A) impurification, (B) pollution, (C) deionisation, (D) doping, (E) , Leave your comments or Download question paper.

Question is ⇒ The process of deliberately adding impurity to a semi-conductor material is called, Options are ⇒ (A) impurification, (B) pollution, (C) deionisation, (D) doping, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The process of deliberately adding impurity to a semi-conductor material is called
A.	impurification [Wrong Answer]
B.	pollution [Wrong Answer]
C.	deionisation [Wrong Answer]
D.	doping [Correct Answer]
View Answer 1 -2 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ Consider isotropic radiator radiating a power of 1 watt. At a distance of 1 metre, the power per unit area with equal
1 watt/m²
4p watt/m²
1/4p watt/m²
2p watt/m²

⇒ What are the minimum number of 2 to 1 multiplexers required to generate a 2 input AND gate a 2 input Ex-OR gate?
1 and 2
1 and 3
1 and 1
2 and 2

⇒ Which of the following element has four valence electrons?
Silicon
Germanium
Both (a) and (b) above
None of the above

⇒ Which of these devices have four layers?
UJT
SCR
TRIAC
SCR and TRIAC

⇒ As compared to a bipolar transistor, a JFET is
highly sensitive to changes in input voltage
more sensitive to changes in input voltage
less sensitive to changes in input voltage
equally sensitive to changes in input voltage

⇒ Consider the following statements:

Acceptor level is formed very close to the conduction band.
The effective mass of the free electron is same as that of a hole.
The magnitude of the charge of a free electron is same as that of a hole.
Addition of donor impurities adds holes to the semiconductor.

Which of the above statements are correct?
1 and 3
2 and 3
2 and 4
3 and 4

⇒ If B, H and M denote flux density, field intensity and magnetisation, B = μ₀ (H + M).
TRUE
FALSE

⇒ The first row of the window is called ' Title bar '.
TRUE
FALSE

⇒ The current through a resistance R is shown in figure. The computed value of power
400 ± 0.42 W
400 ± 4.6 W
400 ± 8.85 W
400 ± 10.65 W

⇒ Flow charts that contain decision sy
represent straight line programs
do not represent straight line programs
all of the above
none of the above

⇒ A klystron amplifier generally uses Pierce gun
TRUE
FALSE

⇒ Hall effect is observed in a specimen (metal or semi- conductor) when it is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen is
normal to both current and magnetic field
in the same direction as current
in a direction anti parallel to magnetic field
none of the above

⇒ Following figure repres
AND
OR
NAND
NOT

⇒ In a combination limiter with sinusoidal input voltage the output wave can be nearly square.
TRUE
FALSE

⇒ As per Boolean algebra, inputs can be interchanged in
OR gates
AND gates
both OR and AND gates
none of the above

⇒ Antenna reciprocity is put to use in
radar system
commercial broadcast
TV broadcast system
none of the above

⇒ In a series R-L-C circuit at the resonant frequency the
current is maximum
current is minimum
impedance is maximum
voltage is maximum

⇒ A waveguide connected to a circularly polarized antenna must be able to efficiently propagate both vertically and horizontally polarised waves.
TRUE
FALSE

⇒ When transistor is used as a switch __________ is defined as the interval which elapses between the transition of input waveform and the time when to transition to 90% of I_c(sat).
storage time
fall time
turn-on time
turn-off time

⇒ The sensitivity of human eyes is maximum at
white portion of spectrum
green portion of spectrum
red portion of spectrum
violet portion of spectrum

⇒ An n type silicon bar 0.1 cm long and 100 μm² in cross-sectional area has a majority carrier concentration of 5 x 10²⁰/m³ and the carrier mobility is 0.13 m⁰/V-s at 300k. If the charge of an electron is 1.6 x 10^-19 coulomb, then the resistance of the bar is
10⁶ ohm
10⁴ ohm
10^-1 ohm
10^-4 ohm

⇒ There is no radiation at right angles to the plane of the array, is end fire array.
TRUE
FALSE

⇒ In a phase discriminator f_c, is the IF to which primary circuit is tuned. Consider the following statements: The primary and secondary voltages are

exactly 90° out of phase when input frequency is f_c
more than 90° out of phase when input frequency is higher than f_c
less than 90° out of phase when input frequency is lower than f_c

Which of the above statements is correct?
1 only
1 and 2
1, 2 and 3
2 and 3

⇒ In a NAND SR latch S = 0, R = 1 then
Q = 0
Q = 1, Q = 0
it is race condition
none of the above

⇒ A 0.5 μF capacitor is connected across a 10 V battery. After a long time, the circuit current and voltage across capacitor will be
0.5 A and 0 V
0 A and 10 V
20 A and 5 V
0.05 A and 5 V

⇒ In an ordinary thyristor
turn on and turn off times are equal
turn on time is more than turn off time
turn off time is more than turn on time
turn on time may be equal, less than or more than turn off time

⇒ An ideal op-amp has zero slew rate.
TRUE
FALSE

⇒ In an ideal current source, the source resistance is zero.
TRUE
FALSE

⇒ In the analogy between electric and magnetic circuits, flux is analogous to
current
voltage
rate of charge of current
rate of charge of voltage

⇒ A ring counter with 5 flip flops will have
5 states
10 states
32 states
infinite states