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Q1. | An enhancement mode MOSFET is on when the gate voltage is |

A. | zero [Wrong Answer] |

B. | positive [Wrong Answer] |

C. | high [Wrong Answer] |

D. | more threshold value [Correct Answer] |

View Answer
Explanation:-
Answer : DDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒

Match the following:

List I (Form) | List II (Network) | ||
---|---|---|---|

A. | Cauer I | 1. | L in series arm and C in shunt arm of ladder |

B. | Cauer II | 2. | C in series arm and L in shunt arm of ladder |

C. | Foster I | 3. | Series combination of L and C in parallel |

D. | Foster II | 4. | Parallel combination of L and C in series |

A-1, B-2, C-3, D-4

A-1, B-2, C-4, D-3

A-2, B-1, C-4, D-3

A-2, B-1, C-3, D-4

⇒ Energy content of atmospheric noise

does not depend on frequency

decreases as frequency is increased

increases as frequency is increased

either (a) or (c) depending on the temperature

⇒ A two branch parallel tuned circuit has a coil of resistance 100 Ω and inductance 0.005 H in one branch and 10

*n*F capacitor in the second branch. At resonance frequency is

100 rad/sec

10000 rad/sec

1000 rad/sec

more than 10000 rad/sec

⇒ Karnaugh map is used to

minimise the number of flip flops in a digital circuit

minimise the number of gates only in a digital circuit

minimise the number of gates and fan in a digital circuit

design gates

⇒ Non-coherently detection is not possible for

PSK

ASK

FSK

both (a) and (c)

⇒ The maximum concentration of the element which can be dissolved in solid silicon at a given temperature is termed as

Solid solubility

Dissolution coefficient

Solidification index

Concentration index

⇒ The filter in figure, uses ideal op-amp. I

low pass filter

high pass filter

band pass filter

band stop filter

⇒ One electron volt is equivalent to

1.6 x 10

^{-10}joule

1.6 x 10

^{-13}joule

1.6 x 10

^{-16}joule

1.6 x 10

^{-19}joule

⇒ As regards dielectric constant

*ε*

_{r}the units are farads/m

the units are newton/coulomb

it is dimensionless

the units are farads

⇒ To convert JK flip flop to D flip flop

connect D to both J and K

connect D to J directly and D to K through inverter

connect D to K directly and D to J through inverter

connect D to K and leave J open

⇒ A ripple counter has 4 bits and uses flip flops with propagation delay time of 25 ns. The maximum possible time for change of state will be

25 ns

50 ns

75 ns

100 ns

⇒ Each of two cascaded stages has a voltage gain of 30. The overall gain is

3

9

30

900

⇒ A lossless transmission line with air dielectric is 6 m long. what is the phase constant?

1p rad/m

2p rad/m

0.2p rad/m

0.1p rad/m

⇒ In a transistor I

_{E}= 10 mA, I

_{CO}= 0.5 μA and a = 0.995. Then I

_{CEO}=

100 μA

25 μA

10.1 mA

10.5 mA

⇒ A three-section RC phase shift oscillator has R = 10K ohms and C = 0.001 μF. If the oscillator is to be made variable using the same value of R, what should be the value of capacitor to obtain a frequency if 1 kHz?

636 pF

180 pF

65 pF

30 pF

⇒ Impedance level of Impatt diodes is generally lower than that of Gunn diodes

TRUE

FALSE

⇒ In a positive edge triggered JK flip flop

High J and High K produce inactive state

Low J and High K produce inactive state

Low J and Low K produce inactive state

High J and Low K produce inactive state

⇒ In an op-amp differentiator

the amplitude of output is proportional to rate of change of input

the amplitude of output is proportional to input

output occurs when input is finite and constant

polarity of input and output is the same

⇒ A CW transmitter radiates

modulated RF carrier

unmodulated RF carrier

both (a) and (b)

none of the above

⇒ As the number SWG increases, area of cross-section decreases.

TRUE

FALSE

⇒ A thyristor has internal power dissipation of 40W and is operated at an ambient temperature of 20°C. If thermal resistance is 1.6° C/W, the junction temperature is

114°C

164°C

94° C

84° C

⇒

Match the following:

List I (Amplifier coupling) | List II (Feature) | ||
---|---|---|---|

A. | RC | 1. | High voltage gain and impedance matching |

B. | Inductive | 2. | Ability to amplify dc and low frequency signals |

C. | Transformer | 3. | Minimum non-linear distortion |

D. | Direct | 4. | Low collector supply voltage can be used |

A-4, B-1, C-3, D-2

A-3, B-4, C-1, D-2

A-1, B-2, C-3, D-4

A-4, B-3, C-2, D-1

⇒ When a substance is repelled by a magnetic field it is known as

ferromagnetic

antiferromagnetic

diamagnetic

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⇒ In the below figure the average load current is 15 A. The rms value of transformer secondary current

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10.61 A

7.5 A

14.14 A

⇒ A λ/4 long high frequency transmission line is terminated into one impedance Z

_{R}. If Z

_{0}be the characteristic impedance of the line, then input impedance Z

_{in}is

Z

_{o}Z

_{R}

Z

^{2}

_{R}/Z

_{o}

Z

^{2}

_{0}/Z

_{R}

Infinity

⇒ In

*p*type semiconductor, the hole concentration

is nearly equal to density of acceptor atoms

is much greater than density of acceptor atoms

is much less than density of acceptor atoms

may be equal to or more or less than density of acceptor atoms

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D MOSFETs

E MOSFETs

both D and E MOSFETs

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⇒ Fourier transform o the function

*f*(

*t*) = 1 is

2p δ (ω)

p δ (ω)

δ(ω)/2p

δ(ω)/p

⇒ Consider the following DO statement in Fortran 77

2

5

zero

⇒ In a thyristor, the forward breakover voltage

is constant

may be constant or may depend on gate current

decreases as gate current is increased

increases as gate current is increased