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Q1. | An enhancement mode MOSFET is on when the gate voltage is |

A. | zero [Wrong Answer] |

B. | positive [Wrong Answer] |

C. | high [Wrong Answer] |

D. | more threshold value [Correct Answer] |

View Answer
Explanation:-
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**Also Read Similar Questions Below :**

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Continuous and aperiodic | 1. | Fourier representation is continuous and aperiodic |

B. | Continuous and Periodic | 2. | Fourier representation is discrete and aperiodic |

C. | Discrete and aperiodic | 3. | Fourier representation is continuous and periodic |

D. | Discrete and periodic | 4. | Fourier representation is discrete and periodic |

A-3, B-2, C-4, D-1

A-1, B-3, C-2, D-4

A-1, B-2, C-3, D-4

A-2, B-1, C-4, D-3

⇒ Which of the following produces upper and lower side frequencies?

Microphone

Demodulator in a superheterodyne receiver

Modulator in a. radio transmitter

Oscillator in a receiver

⇒ δ(

*t*-

*b*) is a pulse function.

TRUE

FALSE

⇒ To measure dielectric loss you would use

Anderson bridge

Kelvin bridge

Schering bridge

Maxwell's bridge

⇒ Choose the correct statement

The reflection coefficient (r) of a transmission line is greater than 1

r varies from 0 to ∞

r is less than or equal to 1

r varies from - ∞ to + ∞

⇒ A full wave rectifier supplies a load of 1 kΩ. The a.c. Voltage applied to the diodes is 220 - 0 - 220 Volts rms. If diode resistance is neglected, then Average d.c. Voltage

220 V

200 V

198 V

0 volts

⇒ An index register in digital computer is a register to be used for

performing arithmetic and logic operations

temporary storage of result

counting number of times a program is executed

address modification purpose

⇒ A series circuit has R = 5 Ω and C = 10 μF. It is switched on to a 12 V dc battery at

*t*= 0. The current in the circuit will be maximum

at

*t*= RC

at

*t*= ∞

at

*t*= 0

^{+}

none of the above

⇒ In 8086 the instruction ADD AL, CH means

the two 8 bit values in registers AL and CH are added and result placed in register AL

the two 8 bit values in registers AL and CH are added and result placed in register CH

the two 16 bit values in registers AL and CH are added and result placed in register AL

the two 16 bit values in registers AL and CH are added and result placed in register CH

⇒ It

*f*(

*t*) is an odd function, the coefficients F

*in the exponential form of Fourier series*

_{n}are real

are imaginary

are complex

may be real or imaginary

⇒ To convert JK flip flop to D flip flop

connect D to both J and K

connect D to J directly and D to K through inverter

connect D to K directly and D to J through inverter

connect D to K and leave J open

⇒ In a circuit the value of resistor is made four times. The noise voltage generated by this resistance will

be doubled

be increased four times

remain the same

become half

⇒ If a function

*f*(

*t*) is an odd, function, its Fourier series

contains only sine terms

contains only cosine terms

contains a constant and sine terms

contains a constant and cosine

⇒ In figure V is ideal voltmeter having infinite resistance. It will read __________ v

40

60

0

100

⇒ Current in a 2H inductance in 10

*e*

^{-t}A. Admittance of the inductor is

-0.5 mho

0.5 mho

5 mho

10 mho

⇒

**Assertion (A):** It is possible that a digital circuit gives the same output for different input voltages

**Reason (R):** A digital circuit is also called logic circuit.

Both A and R are correct and R is correct explanation of A

Both A and R are correct but R is not correct explanation of A

A is true, R is false

A is false, R is true

⇒ Linear transistor circuits always operate in

saturation region

cut off region

active region

passive region

⇒ In using mesh current method it is necessary that at least one mesh current links every element.

TRUE

FALSE

⇒ A function

*f*(

*t*) =

*k*is

stable

marginal stable

unstable

none

⇒ Consider the following statements for a driving point function F(

*j*ω):

- Re F(
*j*ω) is an even function of ω and is 0 or positive for all values of ω. - Im F(
*j*ω) is an even function of ω and is 0 or positive for all values of ω. - Re F(
*j*ω) is an odd function of ω and is 0 or negative for all values of ω. - Re F(
*s*) = 0 for Re*s*= 0.

1 only

1 and 4

2, 2 and 4

4 only

⇒ Which of the following is used as a passive component in electronic circuits?

Tunnel diode

Capacitor

Transistor

Vacuum tube

⇒ The on voltage and forward breakover voltage of an SCR depend on

gate current alone

band gap of semiconductor alone

gate current and semiconductor band gap respectively

semiconductor band gap and gate current respectively

⇒ The signal input to a given amplifier is made up of 100 mΩ signal power and 1 mΩ noise power. The amplifier contributes an additional 100 mΩ of noise and has a power gain of 20 dB. The output signal-to-noise ratio is

100

50

10

5

⇒ For the logic circuit of the given figure,

A + BC

BC

AB

AB + C

⇒ An 8156 has A

_{15}connected to its CE input. A

_{14}to A

_{8}are unconnected, and AD

_{7}to AC

_{0}are connected ignoring shadows, what are the RAM locations?

(4000)

_{H}- (40FF)

_{H}

(8000)

_{H}- (80FF)

_{H}

(8000)

_{H}- (40FF)

_{H}

Any of the above

⇒ 4 bit ripple counter and 4 bit synchronous counter are made using flip-flop having a propagation delay of 10 ns each. If the worst case delay in the ripple counter and the synchronous counter be R and S respectively, then

R = 10 ns, S = 40 ns

R = 40 ns, S = 10 ns

R = 10 ns, S = 30 ns

R = 30 ns, S = 10 ns

⇒ Calculate the resistivity of

*n*-type semiconductor from the following data, Density of holes = 5 x 10

^{12}cm

^{-3}. Density of electrons = 8 x 10

^{13}cm

^{-3}, mobility of conduction electron = 2.3 x 10

^{4}cm

^{2}/ V-sec and mobility of holes = 100 cm

^{2}/V-sec.

0.43 Ω-m

0.34 Ω-m

0.42 Ω-m

0.24 Ω-m

⇒ If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the

active region

saturated region

cut off region

inverse mode

⇒ Which of the following cannot be used to demodulate SSB?

Complete phase shift generator

Product detector

Diode balanced modulator

Bipolar transistor balanced modulator

⇒ High frequency waves are

absorbed by F

_{2}layer

affected by solar cycle

reflected by D layer

none of the above