Question is ⇒ A n-type silicon sample contains a donor concentration of Nd = 2 x 1016 cm-3. The minority carrier hole lifetime is tp0 = 5 μs. The thermal equilibrium generation rate of hole is:, Options are ⇒ (A) 1.125 x 109 cm-3 s-1, (B) 0.625 x 109 cm-3 s-1, (C) 4.5 x 109 cm-3 s-1, (D) 2.25 x 109 cm-3 s-1, (E) , Leave your comments or Download question paper.

Question is ⇒ A n-type silicon sample contains a donor concentration of Nd = 2 x 1016 cm-3. The minority carrier hole lifetime is tp0 = 5 μs. The thermal equilibrium generation rate of hole is:, Options are ⇒ (A) 1.125 x 109 cm-3 s-1, (B) 0.625 x 109 cm-3 s-1, (C) 4.5 x 109 cm-3 s-1, (D) 2.25 x 109 cm-3 s-1, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	A n-type silicon sample contains a donor concentration of N_d = 2 x 10¹⁶ cm^-3. The minority carrier hole lifetime is t_p0 = 5 μs. The thermal equilibrium generation rate of hole is:
A.	1.125 x 10⁹ cm^-3 s^-1 [Wrong Answer]
B.	0.625 x 10⁹ cm^-3 s^-1 [Wrong Answer]
C.	4.5 x 10⁹ cm^-3 s^-1 [Wrong Answer]
D.	2.25 x 10⁹ cm^-3 s^-1 [Correct Answer]
View Answer 2 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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