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Which of the following are the memory performance parameters?
| |
A. | 1 only [Wrong Answer] |
B. | 1 and 2 only [Wrong Answer] |
C. | 2 and 3 only [Wrong Answer] |
D. | 1, 2 and 3 [Correct Answer] |
View Answer
Explanation:-
Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ A super heterodyne receiver has a IF of 465 kHz. It is tuned to a station broadcasting at 500 KHz and its oscillator is operating at 965 KHz, then the 1330 KHz frequency would be
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⇒ Which of the following power amplifiers has highest efficiency?
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bistable multivibrator
monostable multivibrator
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⇒
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Reason (R): For a minimum phase system both GM and PM must be positive for the system to be stable.
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Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
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⇒ A pulse function can be represented as difference of two equal step functions.
TRUE
FALSE
⇒ In the Taylor series expansion of exp(x) + sin(x) about the point x = p, the coefficient of (x - p)^{2} is
exp (p)
0.5 exp (p)
exp (p) + 1
exp (p) - 1
⇒ In the circuit shown, the steady state is reached with S open S is closed at t = 0, the current I in the 1 Ω resistor connected is to be determined at t = 0^{+} is give
1
2
3
42828
⇒ Temperature is analogous to
voltage
flux
charge
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⇒ A loss less transmission line is terminated in a load which reflects a part of the incident power. The measured VSWR is 2. The percentage of the power that is reflected back is
57.73
33.33
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Both A and R are correct and R is correct explanation of A
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A is correct but R is wrong
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1
2
3
4
⇒ A single phase energy meter has the rating 1200 resolutions/ kWh. If a 500 W electric gadget is used for 4 hours, the energy meter will make
1200 revolutions
1800 revolutions
2100 revolutions
2400 revolutions
⇒ If h_{1}[n] = 3δ[n] + δ[n - 1], h_{2}[n] = 2δ[n] + δ[n
{6, 18, 7, 4, 0, - 6, 9}
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Match the following:
List I | List II | ||
---|---|---|---|
A. | Detection of a periodic signal in noise | 1. | Increase in bandwidth |
B. | Recovery of a band limited signal from its uniformly sampled values | 2. | Slope overload error |
C. | Finer quantization of signal | 3. | Nyquist rate |
D. | Delta modulation | 4. | Cross correlation |
A-4, B-3, C-1, D-2
A-3, B-4, C-2, D-1
A-4, B-3, C-2, D-1
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⇒ An OR gate has 4 inputs. One input is high and the other three are low. The output
is low
is high
is alternately high and low
may be high or low depending on relative magnitude of inputs
⇒ Class A and Class B power amplifiers predominate at
audio frequencies
radio frequencies
all frequencies
audio and radio frequency
⇒ The number of flip flops required to construct a register to store number 102_{10} in binary form is
2
4
8
10
⇒ The minimum decimal equivalent of the number 11C0 is
183
194
268
269
⇒ Overall efficiency of class B amplifier is
0.72
0.75
0.785
0.7
⇒ Low frequency response of amplifier is mainly limited by
input capacitor
bypass capacitor
output capacitor
biasing capacitor
⇒ If the sign bit of mantissa is 0 and the exponent is increased from a positive to a more negative number the result is
a larger floating point number
a smaller floating point number
either (a) or (b) depending on the actual number
a negative floating point number
⇒ The time base generator in a CRO gives an output which is
low frequency sinusoidal
high frequency sinusoidal
low frequency rectangular
high frequency sawtooth
⇒ In a second order system, the time constant t of exponential envelopes depends
only on damping factor
only on natural frequency
both on damping factor and natural frequency
neither on damping factor nor on natural frequency
⇒ The voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit) is 25 volts. The maximum voltage on the reverse biased diode will be
100 V
50 V
25 V
12.5 V
⇒ In amplitude modulation
the amplitude of carrier varies in accordance with the amplitude of the modulating signal
the modulating frequency lies in the audio range
the amplitude of the carrier remains constant
the amplitude of the carrier varies in accordance with the frequency of the modulating signal
⇒ In a clocked NAND latch, race condition occur when
R and S are high CLK is low
R and CLK are high and S is low
R, S, CLK are high
R, S, CLK are low
⇒ A sample of N-type semiconductor has electron density of 6.25 x 10^{18}/cm^{3} at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 10^{13}/cm^{3} at this temperature the hole density works out to be
10^{6}/cm^{3}
10^{8}/cm^{3}
10^{10}/cm^{3}
10^{l2}/cm^{3}