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Which one of the following statements is correct for MOSFETS? | |
A. | p channel MOS is easier to produce than n channel MOS [Correct Answer] |
B. | n channel MOS must have twice the area of p channel MOS for the same ON resistance [Wrong Answer] |
C. | p channel MOS has faster switching action than n channel MOS [Wrong Answer] |
D. | p channel MOS has higher packing density than n channel MOS [Wrong Answer] |
View Answer
Explanation:-
Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
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gate source cut off voltage is equal to V_{DS}
gate source cut off voltage is equal to pinch off voltage
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