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Q1. | Which of the following memory is preferred in case of calculators? |

A. | Dynamic RAM [Correct Answer] |

B. | Dynamic ROM [Wrong Answer] |

C. | Static ROM [Wrong Answer] |

D. | Static RAM [Wrong Answer] |

View Answer
Explanation:-
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**Also Read Similar Questions Below :**

⇒ The I/P impedance (Z

_{i}) and the O/P impedance (Z

_{o}) of an ideal trans conductance (Voltage controlled current source) amplifier are

Z

_{i}= 0, Z

_{o}= 0

Z

_{i}= 0, Z

_{o}= ∞

Z

_{i}= ∞, Z

_{o}= 0

Z

_{i}= ∞, Z

_{o}= ∞

⇒ A full adder adds

2 bits

3 bits

4 bits

any number of bits

⇒ It is best to use for coupling a coaxial line to a parallel wire transmission line.

directional Coupler

balun

slotted line

tee

⇒ In the expression 3 * * 2 ** 4 ** 2 in FORTRAN 77 which exponentiation is performed first

4 * * 2

2 * * 4

3 * * 2

all exponentiation are performed together

⇒ Consider the following statements:

- Internal sorting is used if the number of items to be sorted is very large.
- External sorting is used if the number of items to be sorted is vary large.
- External sorting needs auxiliary storage.
- Internal sorting needs auxiliary storage.

1 and 2

2 and 3

3 and 4

2 and 4

⇒ The transconductance curve of a JFET is

a straight line

parabolic

hyperbolic

inverted V-type

⇒ A mod-10 counter can divide the clock frequency by a factor of

10

20

210

102

⇒ When the ac input signal is very large the instantaneous operating point CE amplifier moves all the way between

ac saturation and ac cut off points

ac operating and ac cut off points

ac saturation and ac operating points

none of the above

⇒ If for a silicon

*n*-

*p*-

*n*transistor, the base to emitter voltage (V

_{BE}) is 0.7 V and the collector to base voltage V

_{CB}is 0.2 Volt, then the transistor is operating in the

normal active mode

saturation mode

inverse active mode

cut off mode

⇒ Which of the following statements is/are true for the diamond structure?

- Coordination number is four.
- Packing fraction is 0.34
- Copper crystallizes into diamond structure
- Lattice is FCC.

1 only

1, 2 and 4

2 and 3 only

2, 3 and 4

⇒ Which rectifier has the best ratio of rectification?

Half wave rectifier

Full wave rectifier

Bridge rectifier

Three phase full wave rectifier

⇒ In a full wave rectifier, the current in each of the diodes flows for

the complete cycle of the input signal

half cycle of the input signal

less than half cycle of the input signal

one-fourth cycle of the input signal

⇒ Which one is a causal system?

*y*(

*n*) = 3

*x*[

*n*] - 2

*x*[

*n*- 1]

*y*(

*n*) = 3

*x*[

*n*] + 2

*x*[n + 1]

*y*(

*n*) = 3

*x*[

*n*+ 1] + 2

*x*[

*n*- 1]

*y*(

*n*) = 3

*x*[

*n*+ 1] 2

*x*[

*n*- 1] +

*x*[

*n*]

⇒

**Assertion (A):** Microstrip is very commonly used in microwave integrated circuits.

**Reason (R):** Microstrip has an easy access to the top-surface so that active and passive discrete components can be easily mounted.

Both A and R are correct and R is correct explanation of A

Both A and R are correct but R is not correct explanation of A

A is correct but R is wrong

A is wrong but R is correct

⇒ In figure what is the base current if V

_{BE}= 0

10 mA

9.3 mA

10 μA

9.3 μA

⇒ If reference sound pressure P

_{0}is 2 x 10

^{-5}N/m

^{2}, a sound pressure of 90 dB is equal to

0.632 N/m

^{2}

0.707 N/m

^{2}

0.835 N/m

^{2}

0.925 N/m

^{2}

⇒ Two wattmeter method of 3-phase power measurement can be used to find

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total active power and power factor

total active power and reactive power

total active power, power factor, apparent power, and reactive power

⇒ In a specimen of cast iron, a field strength of 400 AT/m cause a flux density of 0.6 T. In a specimen of silicon steel, the same value of H would cause B to be

0.6 T

more than 0.6 T

less than 0.6 T

0.6 T or less than 0.6 T

⇒ An 8 level encoding scheme is used in a PCM system of 10

*k*H

*z*channel BW. The channel capacity is

80

*kbps*

60

*kbps*

30

*kbps*

18

*kbps*

⇒

`LPEPSI`

3

9

13

23

⇒ Which of the following statement number is not valid in Basic

12

521

662512

99999

⇒ Given below a block diagram of oscillator circuit with various reactance elemen

*x*_{1} = C, *x*_{2} = L, *x*_{3} = C

*x*_{1} = C, *x*_{2} = L, *x*_{3} = L

*x*_{1} = C, *x*_{2} = C, *x*_{3} = L

*x*_{1} = L, *x*_{2} = C, *x*_{3} = L

⇒ If *e* = 10 cos (2p x 10^{8}*t* + 20 cos 2p 10^{3}*t*). The bandwidth is

10^{8} Hz

42 kHz

21 kHz

10^{8} ± 10^{3} Hz

⇒ Thyristors connected in series need :

static equalizing circuit

dynamic equalizing circuit

both static and dynamic equalizing circuits

none of the above

⇒ At a particular time it is observed that the frequencies of F layer at Delhi is 3 MHz the maximum electron density is

11 x 10^{10}

1.1 x 10^{10}

0.11 x 10^{10}

11 x 10^{12}

⇒ For the power amplifier circuit shown below, the maximum power dissipated by both output transisto

9.66 W

30.11 W

31.66 W

33.66 W

⇒ Which of the following memories normally has highest storage capacity?

Magnetic disc

Magnetic tape

Semiconductor memory

Core memory

⇒ The advantages of high density IC are

more circuits on chip

high operating speed

low power consumption

both (a) and (b)

⇒ In an AM system, doubling of modulation index doubles the antenna current. The system is

single side band full carrier

vestigial side band

single side band suppressed carrier

double side band full carrier

⇒ When P-N junction is in forward bias, by increasing the battery voltage

current through P-N junction reduces

current through P-N junction increases

circuit resistance increases

none of the above

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