Question is ⇒ Which of the following is true?, Options are ⇒ (A) A silicon wafer heavily doped boron is a p+ substrate, (B) A silicon wafer lightly doped boron is a p+ substrate, (C) A silicon wafer heavily doped arsenic is a p+ substrate, (D) A silicon wafer lightly doped arsenic is a p+ substrate, (E) , Leave your comments or Download question paper.

Question is ⇒ Which of the following is true?, Options are ⇒ (A) A silicon wafer heavily doped boron is a p+ substrate, (B) A silicon wafer lightly doped boron is a p+ substrate, (C) A silicon wafer heavily doped arsenic is a p+ substrate, (D) A silicon wafer lightly doped arsenic is a p+ substrate, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Which of the following is true?
A.	A silicon wafer heavily doped boron is a p⁺ substrate [Correct Answer]
B.	A silicon wafer lightly doped boron is a p⁺ substrate [Wrong Answer]
C.	A silicon wafer heavily doped arsenic is a p⁺ substrate [Wrong Answer]
D.	A silicon wafer lightly doped arsenic is a p⁺ substrate [Wrong Answer]
View Answer 1 -2 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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