Question is ⇒ Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?, Options are ⇒ (A) ni(T) = (A/T) exp (- E8/kT2), (B) ni(T) = A (- E8/2kT)10, (C) ni(T) = A exp (- E8/2kT2), (D) ni(T) = AT3/2 exp (-E8/2kT), (E) , Leave your comments or Download question paper.

Question is ⇒ Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?, Options are ⇒ (A) ni(T) = (A/T) exp (- E8/kT2), (B) ni(T) = A (- E8/2kT)10, (C) ni(T) = A exp (- E8/2kT2), (D) ni(T) = AT3/2 exp (-E8/2kT), (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Which of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (n_i) of a semiconductor?
A.	n_i(T) = (A/T) exp (- E₈/kT²) [Wrong Answer]
B.	n_i(T) = A (- E₈/2kT)¹⁰ [Wrong Answer]
C.	n_i(T) = A exp (- E₈/2kT²) [Wrong Answer]
D.	n_i(T) = AT^3/2 exp (-E₈/2kT) [Correct Answer]
View Answer 1 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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