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When analysing two port networks in parallel it is more convenient to use | |
A. | z parameters [Wrong Answer] |
B. | h parameters [Wrong Answer] |
C. | T parameters [Wrong Answer] |
D. | y parameters [Correct Answer] |
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Explanation:-
Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ Diffraction of EM waves
arises only with spherical wave front
may occur around the edge of an obstacle
occurs when waves pass through a big slot
none of the above
⇒ A uniform plane wave travelling in air is incident on the plane boundary between air and another dielectric medium with ε_{r} = 4. The reflection coefficient for the normal incidence is
zero
0.5 ∠180°
0.33 ∠0°
0.33 ∠180°
⇒ In all insulators the bonding is covalent.
TRUE
FALSE
⇒
Both A and R are correct and R is correct explanation for A
Both A and R are correct but R is not correct explanation for A
A is correct R is wrong
A is wrong R is correct
⇒ A load Z_{L} = R_{L} + jX_{L} is to be matched using an ideal transformer to generator of internal impedance Z_{S} = R_{S} + jX_{S}. The ratio of transformer required is __________ .
|Z_{S}|/|Z_{L}|
R_{L}/R_{S}
R_{L}/Z_{S}
|Z_{L}|/R_{S}
⇒ Four inputs A, B, C, D are fed to a NOR gate. The output of NOR gate is fed to an inverter. The output of inverter is
A + B + C + D
A + B + C + D
ABCD
ABCD
⇒ Which of the following memories normally has highest storage capacity?
Magnetic disc
Magnetic tape
Semiconductor memory
Core memory
⇒ Which is not purpose of modulation?
Effective radiation
Multiplexing
Narrow band
Increase in signal power
⇒ In the network of the figure is the maximum power is delivered to RL if its valu
16 Ω
40/3 Ω
60 Ω
20 Ω
⇒ A 300 MHz plane EM wave is propagating in free space. The wave is incident normally on an infinite copper slap. The antenuation constant for the wave is (σ_{copper} = 5.8 x 10^{7} mho/ m). The skin depth is
0.005 x 10^{-3} m
0.0038 x 10^{-3}m
0.0028 x 10^{-3} m
0.0024 x 10^{-3} m
⇒ Zero suppression is not used in actual practice.
TRUE
FALSE
⇒
A-1, B-2, C-3, D-4
A-2, B-1, C-3, D-4
A-3, B-4, C-1, D-2
A-1, B-4, C-3, D-2
⇒ Consider a baseband binary PAM receiver shown below. The additive channel noise n(t) is whit with power spectral density S_{N}(f) = N_{0}/2 = 10^{-20} W/Hz. The low-pass filter is ideal with unity gain and cutoff frequency 1 MHz. Let Y_{k} represent the random variable y(t_{k}0.5 x e^{-3.5}
0.5 x e^{-5}
0.5 x e^{-7}
0.5 x e^{-10}
⇒ Which of the following is not a classification of programmed data transfer?
Synchronous transfer
Hand shaking
Interrupt driver transfer
Direct transfer
⇒ A 2 μF capacitor is shunted by a 1 kΩ maintained at temperature 400 K. The rms noise voltage across the capacitor over the entire frequency band is:
6.25 x 10^{-8} V
5.25 x 10^{-6} V
6.25 x 10^{-6} V
5.25 x 10^{-8} V
⇒ Peak to peak value of a sine wave is equal to twice the peak value
TRUE
FALSE
⇒ A transistor amplifier has pole
s_{1}
s_{1} + s_{2} + s_{3} + s_{4}
s_{1} + s_{4}
s_{4}
⇒ The filter circuit for feeding a wooffer has
an inductance in series and capacitance in parallel
a capacitance in series and an inductance in parallel
a resistance in series and an inductance in parallel
an inductance in series and a resistance in parallel
⇒ (FE35)_{16} XOR (CB15)_{16} is equal to
(3320)_{16}
(FE35)_{16}
(FF50)_{16}
(3520)_{16}
⇒ The pinch-off voltage is the drain voltage on the shorted gate drain curve above which the drain current becomes
almost negligible
very high
almost constant
highly variable
⇒ In an R-S latch, race condition occurs when
R is low and S is high
R and S are high
R and S are low
R is high and S is low
⇒ The on voltage and forward breakover voltage of an SCR depend on
gate current alone
band gap of semiconductor alone
gate current and semiconductor band gap respectively
semiconductor band gap and gate current respectively
⇒ If t is relaxation time and t_{c} is average time between collisions, then in an isotropic metal
t = t_{c}
t < t_{c}
t_{c} < t
T = 0.01 t_{e}
⇒ SCR turns of from conducting state to blocking state on
reducing gate current
reversing gate voltage
reducing anode current below holding current value
applying ac to the gate
⇒ If f(t) is an even function, the coefficients F_{n} in the exponential form of Fourier series
are real
are imaginary
are complex
may be real or imaginary
⇒
Both A and R are true and R is correct explanation of A
Both A and R are true and R is not the correct explanation of A
A is true but R is false
A is false but R is true
⇒ If Laplace transform of f(t) is F(s), then £ f(t - a) u (t - a)= 0
e^{as} F(s)
e^{-as} F(s)
- e^{as} F(s)
- e ^{-as} F(s)
⇒ A ring counter with 5 flip-flops will have __________ states.
5
10
32
Infinite
⇒ The output Y of the circuit shown in the figur
(A + B) C + DE
AB + C(D + E)
(A + B) C + D + E
(AB + C) . DE
⇒ In a second order undamped system, the poles are on
positive real axis
imaginary axis
negative real axis
either (a) or (c)
⇒ Diffraction of EM waves
arises only with spherical wave front
may occur around the edge of an obstacle
occurs when waves pass through a big slot
none of the above
⇒ A uniform plane wave travelling in air is incident on the plane boundary between air and another dielectric medium with ε_{r} = 4. The reflection coefficient for the normal incidence is
zero
0.5 ∠180°
0.33 ∠0°
0.33 ∠180°
⇒ In all insulators the bonding is covalent.
TRUE
FALSE
⇒
Assertion (A): Transformer coupling has the disadvantage of the weight of transformer and Saturation of core
Reason (R): Transformer coupling is very suitable for impedance matching
Both A and R are correct and R is correct explanation for A
Both A and R are correct but R is not correct explanation for A
A is correct R is wrong
A is wrong R is correct
⇒ A load Z_{L} = R_{L} + jX_{L} is to be matched using an ideal transformer to generator of internal impedance Z_{S} = R_{S} + jX_{S}. The ratio of transformer required is __________ .
|Z_{S}|/|Z_{L}|
R_{L}/R_{S}
R_{L}/Z_{S}
|Z_{L}|/R_{S}
⇒ Four inputs A, B, C, D are fed to a NOR gate. The output of NOR gate is fed to an inverter. The output of inverter is
A + B + C + D
A + B + C + D
ABCD
ABCD
⇒ Which of the following memories normally has highest storage capacity?
Magnetic disc
Magnetic tape
Semiconductor memory
Core memory
⇒ Which is not purpose of modulation?
Effective radiation
Multiplexing
Narrow band
Increase in signal power
⇒ In the network of the figure is the maximum power is delivered to RL if its valu
16 Ω
40/3 Ω
60 Ω
20 Ω
⇒ A 300 MHz plane EM wave is propagating in free space. The wave is incident normally on an infinite copper slap. The antenuation constant for the wave is (σ_{copper} = 5.8 x 10^{7} mho/ m). The skin depth is
0.005 x 10^{-3} m
0.0038 x 10^{-3}m
0.0028 x 10^{-3} m
0.0024 x 10^{-3} m
⇒ Zero suppression is not used in actual practice.
TRUE
FALSE
⇒
Match the following:
List I | List II | ||
---|---|---|---|
A. | RF amplifier | 1. | Amplifier received carrier and sidebands |
B. | Loudspeaker | 2. | Gives acoustic output |
C. | Demodulator | 3. | Has IF input and AF output |
D. | IF amplifier | 4. | Fixed-tuned to intermediate frequency |
A-1, B-2, C-3, D-4
A-2, B-1, C-3, D-4
A-3, B-4, C-1, D-2
A-1, B-4, C-3, D-2
⇒ Consider a baseband binary PAM receiver shown below. The additive channel noise n(t) is whit with power spectral density S_{N}(f) = N_{0}/2 = 10^{-20} W/Hz. The low-pass filter is ideal with unity gain and cutoff frequency 1 MHz. Let Y_{k} represent the random variable y(t_{k}0.5 x e^{-3.5}
0.5 x e^{-5}
0.5 x e^{-7}
0.5 x e^{-10}
⇒ Which of the following is not a classification of programmed data transfer?
Synchronous transfer
Hand shaking
Interrupt driver transfer
Direct transfer
⇒ A 2 μF capacitor is shunted by a 1 kΩ maintained at temperature 400 K. The rms noise voltage across the capacitor over the entire frequency band is:
6.25 x 10^{-8} V
5.25 x 10^{-6} V
6.25 x 10^{-6} V
5.25 x 10^{-8} V
⇒ Peak to peak value of a sine wave is equal to twice the peak value
TRUE
FALSE
⇒ A transistor amplifier has pole
s_{1}
s_{1} + s_{2} + s_{3} + s_{4}
s_{1} + s_{4}
s_{4}
⇒ The filter circuit for feeding a wooffer has
an inductance in series and capacitance in parallel
a capacitance in series and an inductance in parallel
a resistance in series and an inductance in parallel
an inductance in series and a resistance in parallel
⇒ (FE35)_{16} XOR (CB15)_{16} is equal to
(3320)_{16}
(FE35)_{16}
(FF50)_{16}
(3520)_{16}
⇒ The pinch-off voltage is the drain voltage on the shorted gate drain curve above which the drain current becomes
almost negligible
very high
almost constant
highly variable
⇒ In an R-S latch, race condition occurs when
R is low and S is high
R and S are high
R and S are low
R is high and S is low
⇒ The on voltage and forward breakover voltage of an SCR depend on
gate current alone
band gap of semiconductor alone
gate current and semiconductor band gap respectively
semiconductor band gap and gate current respectively
⇒ If t is relaxation time and t_{c} is average time between collisions, then in an isotropic metal
t = t_{c}
t < t_{c}
t_{c} < t
T = 0.01 t_{e}
⇒ SCR turns of from conducting state to blocking state on
reducing gate current
reversing gate voltage
reducing anode current below holding current value
applying ac to the gate
⇒ If f(t) is an even function, the coefficients F_{n} in the exponential form of Fourier series
are real
are imaginary
are complex
may be real or imaginary
⇒
Assertion (A): KCL is dual of KVL.
Reason (R): Node is dual of mesh.
Both A and R are true and R is correct explanation of A
Both A and R are true and R is not the correct explanation of A
A is true but R is false
A is false but R is true
⇒ If Laplace transform of f(t) is F(s), then £ f(t - a) u (t - a)= 0
e^{as} F(s)
e^{-as} F(s)
- e^{as} F(s)
- e ^{-as} F(s)
⇒ A ring counter with 5 flip-flops will have __________ states.
5
10
32
Infinite
⇒ The output Y of the circuit shown in the figur
(A + B) C + DE
AB + C(D + E)
(A + B) C + D + E
(AB + C) . DE
⇒ In a second order undamped system, the poles are on
positive real axis
imaginary axis
negative real axis
either (a) or (c)