Question is ⇒ When a series RL circuit is switched on to a dc voltage, the rate of change of current is maximum at <i>t</i> = 0., Options are ⇒ (A) TRUE, (B) FALSE, (C) , (D) , (E) , Leave your comments or Download question paper.

Question is ⇒ When a series RL circuit is switched on to a dc voltage, the rate of change of current is maximum at <i>t</i> = 0., Options are ⇒ (A) TRUE, (B) FALSE, (C) , (D) , (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	When a series RL circuit is switched on to a dc voltage, the rate of change of current is maximum at t = 0.
A.	TRUE [Correct Answer]
B.	FALSE [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ The maximum effective aperture of λ/2 (half-wave) antenna is
0.013 λ²
0.13 λ²
1.3 λ²
13 λ²

⇒ In the FM wave described by equation v = 15 sin (4 x 10⁸ t + 3 sin 1100 t), the maximum frequency deviation is
175 Hz
525 Hz
3 Hz
58.33 Hz

⇒ The disadvantage of transformer coupling in amplifier is
cost of transformer at audio frequencies
size of transformer at audio frequencies
size of transformer at radio frequencies
cost and size of transformer at audio frequencies

⇒

Assertion (A): Klystron amplifiers use one or more intermediate cavities in addition to buncher and catcher cavity.

Reason (R): When one or more intermediate cavities are used the bandwidth can be increased.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ The counter shown in the given figure is built using 4 -ve edge triggered toggle FFs. The FF can be set asynchronously when R = 0. The combinational logic required to realize a modulo-13 counte
F = Q₄ Q₃ Q₂ Q₁
F = Q₄ + Q₃ + Q₂ + Q₁
F = Q₄ + Q₃ + Q₂ + Q₁
F = Q₄Q₃Q₂Q₁

⇒ At room temperature, the current in the, intrinsic semiconductor is due to
holes
electrons
ions
holes and electrons

⇒ The main advantage of CMOS circuit is
high gain
high output impedance
low power consumption
high gain and high output impedance

⇒ A resistor of 10 kΩ has an rms noise voltage of 1 mV under a certain set of conditions. A resistor of 20 kΩ under the same conditions will have an rms noise voltage of
1 mV
2 mV
1.414 mV
4 mV

⇒ Gauge factor of a strain gauge is
unit change in resistance per unit change in length
change in resistance per unit change in length
unit change in length per unit change in resistance
none of the above

⇒ Which of the following statements is written in plain English in 8085?
Data definition
Assignment
Conditional
Repetitive

⇒ The given figure shows a control system. The maximum value of gain for which the system is stabl
3
3
4
5

⇒ In metals, the average drift velocity of electron per unit field is called mobility.
TRUE
FALSE

⇒ A capacitor does not allow sudden changes
in currents
in voltage
in both current and voltage
neither of two

⇒ For type 0 system the starting point (i.e. ω = 0) of polar plot is finite and is on positive real axis.
TRUE
FALSE

⇒ ALU 1C 74181 can accept two words each having
2 bits
4 bits
8 bits
16 bits

⇒ To turn off an SCR, it is necessary to reduce its current to less than :
trigger current
holding current
breakover current
none of the above

⇒ For a plate-modulated class C amplifier the plate supply voltage is E. The maximum plate cathode voltage could be almost high as
2E
3E
4E
6E

⇒

Match the following:

	List I (Diode Rectifier)		List II (Efficiency is R_f/R_L = 0.25)
A.	Half wave	1.	0.54
B.	Bridge Rectifier	2.	0.65
C.	Full wave using tapped centre transformer	3.	0.325

A-1, B-2, C-3
A-2, B-1, C-3
A-3, B-2, C-1
A-3, B-1, C-2

⇒ At room temperature the barrier potential in a silicon diode is
0.1 V
0.3 V
0.7 V
1 V

⇒ Which one of the following is not necessarily an advantage of the phase cancellation method of obtaining SSB over the filter method?
It is possible to generate SSB at any frequency
SSB with lower audio frequencies present can be generated
Switching from one sideband to other is simpler
There are more balanced modulators; therefore the carrier is suppressed better

⇒ The strength of controlled voltage source depends on
value of current elsewhere in the circuit
value of voltage elsewhere in the circuit
value of current or voltage elsewhere in the circuit
none of the above

⇒ At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is
450 cm²/V-s
1350 cm²/V-s
1800 cm²/V-s
3600 cm²/V-s

⇒ In the given figure 15.6 shows a series, R - C circuit fed by a current source i(t). There is an initial voltage v₀. across the capacitor. The sy
is linear
is non linear
may be linear or non linear
is linear only if v₀ is zero

⇒ Figure represen
JFET shunt switching circuit
JFET series switching circuit
JFET analog switch
multiplexing

⇒ The equivalent form of the logical expression (ABC + ABC + ABC + ABC + ABC) is:
C + (A ⊕ B)
(A + B + C)(A + B + C)
(A + B + C)(A + B + C)(A + B + C)
(A + B + C)(A + B + C)(A + B + C)

⇒

Assertion (A): Energy meters use induction principle.

Reason (R): Induction wattmeter is less accurate than a dynamometer wattmeter.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true

⇒ The internal impedance of a source is 3 + j 7 Ω. For maximum power transfer, load impedance should be
3 + j 7 Ω
3 - j 7 Ω
7 + j 3 Ω
7 - j 3 Ω

⇒ A chopper is a high efficiency circuit.
TRUE
FALSE

⇒ An antisymmetric filter having odd number of coefficient may have a performance as
low pass
high pass
band pass
all pass

⇒ The coupling capacitor in amplifier circuits
affects dc biasing
does not affect dc biasing
affects dc biasing to some extent
both (a) and (c)