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Q1. | Two 2 port circuits are connected cascaded. To determine the response, it is more convenient to use |

A. | O.C. impedance parameters [Wrong Answer] |

B. | S.C. admittance parameters [Wrong Answer] |

C. | ABCD parameters [Correct Answer] |

D. | h parameters [Wrong Answer] |

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Explanation:-
Answer : CDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ In a T flip-flop the output frequency is

same as input frequency

half of I/p frequency

double the input frequency

none

⇒ Which of the following is/are correct? The circuit shown in the fig

1 and 3

1 and 2

1 and 4

3 only

⇒ The mobility of e

^{-}for Ge and Si respectively is

1.66, 2.5

2.5, 1.66

2.7, 2.33

2.33, 2.7

⇒ In the following astable multivibrator circuit, which properties of

*v*

_{0}(

*t*) depends on R

_{2Only the frequencyOnly the amplitudeBoth the amplitudeNeither the amplitude nor the frequency}

⇒ In a common Emitter BJT amplifier, the maximum usable supply voltage is limited by

avalanche breakdown of Base emitter junction

collector to Base Breakdown voltage with emitter open (βV

_{CBO})

collector Emitter Breakdown voltage with base open (βV

_{CBO})

zener breakdown voltage of the emitter base Junction

⇒ Consider the expression

*b*=

*acd*(

*xz*). The correct C statement for above expression is

*a c d*(

*x**

*z*)

*a**

*c**

*d** (

*x z*)

*a**

*c**

*d*(

*x**

*z*)

None of the above

⇒ A lag compensator is essentially a

low pass filter

high pass filter

band pass filter

either (a) or (b)

⇒ In the spectrum of a FM wave

the carrier frequency cannot disappear

the carrier frequency disappears when the modulation index is large

the amplitude of any sideband depends on the modulation index

the total number of sidebands depends on the modulation index

⇒ If V

_{a}= 10 ∠0, V

_{b}= 10 ∠ -120° and V

_{c}= 10 ∠ -240°, then V

_{a2}and V

_{a0}are

10 and 0 respectively

0 and 10 respectively

0 and 0

10 and 10

⇒ Regarding TASI which one of the following statements is wrong?

It snatches the channel in his speech and may allocate it to another speaker needing it.

The same speaker is reassigned a channel almost instantly when he speaks again even when the circuit is heavily loaded.

It increases the overall utilization of the transmission channel

Intercontinental callers sometimes confuse the effects of TASI with the effects of satellite delay.

⇒ In a waveguide if TE mode exist for

*z*direction propagation, then

E

_{z}= 0, H

_{z}≠ 0

E

_{z}= 0, H

_{z}= 0

E

_{z}≠ 0, H

_{z}= 0

E

_{z}≠ 0, H

_{z}≠ 0

⇒ When a TTL is driving an CMOS gates it is necessary to ensure that

V

_{OL}(for TTL) ≤ V

_{IL}(for CMOS) and V

_{0H}(for TTL) ≥ VIH (for CMOS)

V

_{0L}(for TTL) ≥ V

_{IL}(for CMOS)

V

_{0H}(for TTL) ≤ V

_{IH}(for CMOS)

V

_{0L}(for TTL) ≥ V

_{IL}(for CMOS) and V

_{0H}(for TTL) ≤ VIH (for CMOS)

⇒ The input to a parity detector is 1001. The output is

0

1

0 or 1

indeterminate

⇒ The load end of a quarter wave transformer gets disconnected thereby causing an open-circuited load. What will be the input impedance of the transformer?

Zero

Infinite

Finite and Positive

Finite and Negative

⇒ In an R-L circuit, the impedance is 30 Ω at a frequency of 100 Hz. At 200 Hz, the impedance should be

30 Ω or more

60 Ω or more

15 Ω or less

more than 30 Ω but less than 60 Ω

⇒ In a high frequency coaxial line and the length of line characteristic impedance is a function of

properties of insulating material only

inner and outer conductor radius only

both (a) and (b)

neither (a) nor (b)

⇒ For circuit in figure, which combination of V

_{TH}and R

_{TH}represents the circuit as seen from

*ab<*

1 V, 10 Ω

1 V, 1000 Ω

1 mV, 1000 Ω

1 mV, 10 Ω

1 V, 10 Ω

1 V, 1000 Ω

1 mV, 1000 Ω

1 mV, 10 Ω

⇒

A-1, B-3, C-2

A-2, B-3, C-1

A-2, B-1, C-4

A-4, B-3, C-1

⇒ In a metal the probability of a state 0.1 eV below Fermi level being occupied

is more than the probability of state 0.1 eV above Fermi level being occupied

is the same as the probability of state 0.1 eV above Fermi level being occupied

is less than the probability of state 0.1 eV above Fermi level being occupied

may be equal to or more or less than the probability of state 0.1 eV above Fermi level being occupied

⇒ A reactance function is always a quotient of

even to odd polynomials

odd to even polynomials

even to odd or odd to even polynomials

even to even polynomials

⇒ A periodic voltage has following values for equal time intervals changing suddenly from one value to next : 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, - 5, - 10

31

32

insufficient data

none of these

⇒ If transfer function of a system is H(

minimun phase

maximum phase

mixed phase

none

⇒ The thin parallel wires are carrying current along the same direction. The force experienced by one due to the other is

parallel to the lines

perpendicular to the lines and attractive

perpendicular to the lines and repulsive

zero

⇒ In figure, I

⇒ A memory system of size 16 K bytes is required to be designed using memory chips having 12 address lines and 4 data lines-each. The number of such chips required to design and the memory system is :

2

4

8

16

⇒ The phase margin and damping ratio have no relation.

TRUE

FALSE

⇒ When a lead acid cell is in fully charged condition the specific gravity of electrolyte is about 1.22.

TRUE

FALSE

⇒ In a 3 phase full wave regulator feeding a star connected resistance load, firing angle is 75°. Then the number of thyristors conducting at one time is

1

2

3

4

⇒ The time constant of the circuit in figur

RC

2 RC

3 RC

5 RC

⇒ When a semi-conductor is doped, its electrical conductivity

increases

decreases in the direct ratio of the doped material

decreases in the inverse ratio of the doped material

remains unaltered

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Coastals receiver | 1. | VSB |

B. | Stereo-multiplexing | 2. | Demodulating DSB-SC |

C. | TV broad casting | 3. | FM radio broad casting |

4. | Slope overload | ||

5. | Matched filter |

A-1, B-3, C-2

A-2, B-3, C-1

A-2, B-1, C-4

A-4, B-3, C-1

⇒ In a metal the probability of a state 0.1 eV below Fermi level being occupied

is more than the probability of state 0.1 eV above Fermi level being occupied

is the same as the probability of state 0.1 eV above Fermi level being occupied

is less than the probability of state 0.1 eV above Fermi level being occupied

may be equal to or more or less than the probability of state 0.1 eV above Fermi level being occupied

⇒ A reactance function is always a quotient of

even to odd polynomials

odd to even polynomials

even to odd or odd to even polynomials

even to even polynomials

⇒ A periodic voltage has following values for equal time intervals changing suddenly from one value to next : 0, 5, 10, 20, 50, 60, 50, 20, 10, 5, 0, - 5, - 10

31

*v*32

*v*insufficient data

none of these

⇒ If transfer function of a system is H(

*z*) = 6 +*z*^{-1}+*z*^{-2}then system isminimun phase

maximum phase

mixed phase

none

⇒ The thin parallel wires are carrying current along the same direction. The force experienced by one due to the other is

parallel to the lines

perpendicular to the lines and attractive

perpendicular to the lines and repulsive

zero

⇒ In figure, I

_{D}= 4 mA. Then V_{S20 V16 V6 V0.6 V}⇒ A memory system of size 16 K bytes is required to be designed using memory chips having 12 address lines and 4 data lines-each. The number of such chips required to design and the memory system is :

2

4

8

16

⇒ The phase margin and damping ratio have no relation.

TRUE

FALSE

⇒ When a lead acid cell is in fully charged condition the specific gravity of electrolyte is about 1.22.

TRUE

FALSE

⇒ In a 3 phase full wave regulator feeding a star connected resistance load, firing angle is 75°. Then the number of thyristors conducting at one time is

1

2

3

4

⇒ The time constant of the circuit in figur

RC

2 RC

3 RC

5 RC

⇒ When a semi-conductor is doped, its electrical conductivity

increases

decreases in the direct ratio of the doped material

decreases in the inverse ratio of the doped material

remains unaltered