Question is ⇒ To couple a coaxial line to a parallel wire line, it is best to use a, Options are ⇒ (A) balun, (B) slotted line, (C) quarter wave transformer, (D) directional coupler, (E) , Leave your comments or Download question paper.

Question is ⇒ To couple a coaxial line to a parallel wire line, it is best to use a, Options are ⇒ (A) balun, (B) slotted line, (C) quarter wave transformer, (D) directional coupler, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	To couple a coaxial line to a parallel wire line, it is best to use a
A.	balun [Correct Answer]
B.	slotted line [Wrong Answer]
C.	quarter wave transformer [Wrong Answer]
D.	directional coupler [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ The radiation resistance of a rod tubing antenna is
55 Ω to 60 Ω
60 to 100 Ω
0 to 377 Ω
60 to 200 Ω

⇒ Two ammeters A and B both 0-10 A have internal resistance of 1 Ω and 0.5 Ω respectively. They are connected in parallel. If total current is 15 A, then
I_A = I_B = 7.5 A
I_A = 5 A, I_B = 10 A
I_A = 10 A, I_B = 5 A
I_A = 9 A, I_B = 6 A

⇒ During amplitude modulation, the phase angle of the modulating voltage changes by
0°
45°
90°
180°

⇒ Modulation is also called detection.
TRUE
FALSE

⇒ In a class C power amplifier the input frequency of ac signal is 1 MHz. If tank circuit has C = 1000 pF, the value of L =
25 μH
50 μH
100 μH
200 μH

⇒ In phase shift keying the input signal is
s_t(t) = A cos ω₀t and s₂(t) = - A cos ω₀t
s₁(t) = s₂(t) = A cos ω₀t
s₁(t) = A cos ω₀t and s₂(t) = A cos (ω₀t + p/2)
s₁(t) = A cos ω₀t and s₂(t) = - A (cos ω₀t + p/2)

⇒ An n type silicon bar 0.1 cm long and 100 μm² in cross-sectional area has a majority carrier concentration of 5 x 10²⁰/m³ and the carrier mobility is 0.13 m⁰/V-s at 300k. If the charge of an electron is 1.6 x 10^-19 coulomb, then the resistance of the bar is
10⁶ ohm
10⁴ ohm
10^-1 ohm
10^-4 ohm

⇒ The size of cache memory in most microcomputers is about
a few bytes
a few kilobytes
a few megabytes
a few gigabytes

⇒ For the circuit in figure, fed by a unit step voltage, v_{c1 - e^-t/RC
e^-t/RC
e^t/RC
1}

⇒ A thyristor has a turn on time of 6 μs. If the anode circuit is inductive, the turn on time will be
6 μs
less than 6μs
more than 6 μs
either 6 μs or less

⇒ The response of a function is decided by
the location of its zeros
the location of its poles
both (a) and (b)
none of the above

⇒ If a transistor is operating with both of its Junctions forward biased, but with the collector base forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is operating in the
forward active mode
reverse saturation mode
reverse active mode
forward saturation mode

⇒ In FORTRAN 77 the total number of characters in a variable can be a maximum of
6
1
8
9

⇒ Gain of isotropic antenna is
10 dB
0 dB
∞
1 dB

⇒ Which of the following is incorrect?
(111)₂ + (10)₂ = 9
(111)₂ + (2)₁₀ = (9)₁₆
7 + 2 = (1001)₂
None of the above

⇒ Consider the differential amplifier shown in figure. (Assume β is very hi
5 V
10 V
15 V
30 V

⇒ KCL is a statement of principle of conservation of energy.
TRUE
FALSE

⇒ Double spotting in a receiver is due to
poor sensitivity of RF amplifier
high gain of IF amplifier
inadequate image frequency rejection
all of the above

⇒ If x₁(t) = 2 sin pt + cos 4 pt and x₂(t) = sin 5 pt + 3 sin 13 pt then
x₁, x₂ both periodic
x₁ x₂ both not periodic
x₁ periodic, x₂ not periodic
x₁ is not periodic ; but x₂ is periodic

⇒ The noise temperature of sky is about __________ °K.
100
273
0
30

⇒ In figure, V₁ = 40 V when R = 10 Ω, if R = 0, V₂ wil
40 V
30 V
20 V
10 V

⇒ As compared to bipolar junction transistor, a FET
is less noisy
has better thermal stability
has higher input resistance
all of the above

⇒ The main advantage of superheterodyne receiver is
better tracking
simple cut
better alignment
improvement in selectivity and sensitivity

⇒

Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.

Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ In 8085 microprocessor, a RIM instruction is used to
disable the interrupts 7.5, 6.5, 5.5
enable the interrupts 7.5, 6.5, 5.5
read in the serial input data
none of the above

⇒ In the human eye, an image persists for a time of about
1 second
0.1 second
0.05 second
0.02 second

⇒ The light output of LED varies as (current)ⁿ. The value of n is about
0.5
1
1.3
2.1

⇒ If the plate supply voltage for a plate modulated class C amplifier is E volts, the maximum plate-cathode voltage could be almost as high as
E
E/2
2E
4E

⇒ The block diagram of the given figure
On-off controller
On-off controller with differential gap
On-off controller with integral gap
Three position controller

⇒

Match the following:

	List I (Transducer)		List II (Operation)
A.	Bourden tube	1.	Fluid flow to resistance change
B.	Hot wire ammeter	2.	Velocity to pressure
C.	Hydrometer	3.	Pressure to displacement
D.	Pitot tube	4.	Specific gravity to displacement

A-1, B-3, C-2, D-4
A-3, B-1, C-2, D-4
A-3, B-1, C-4, D-2
A-4, B-2, C-3, D-1