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Q1. | The sum of two sine waves of different frequencies is a sine wave. |

A. | TRUE [Wrong Answer] |

B. | FALSE [Correct Answer] |

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Explanation:-
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**Also Read Similar Questions Below :**

⇒ A network is causal if impulse response is zero for

*t*< 0.

TRUE

FALSE

⇒ In the case of a 70-MHz IF carrier for a transponder bandwidth of 36 MHz, energy must lie between MHz.

34 and 106

52 and 88

106 and 142

34 and 142

⇒ An inverting voltage feedback is a

voltage amplifier

current amplifier

current to voltage converter

voltage to current converter

⇒ The L/C has the dimension of

time

capacitance

velocity

resistance

⇒ In FORTRAN 77 IFIX (-73.2) gives the value

73

-73

-7

-73.2

⇒ For the binary number 11101000, the equivalent hexadecimal number is

F 9

F 8

E 9

E 8

⇒ In case of surface waves the field strength at a point is directly proportional to

antenna height

wave frequency

current of the antenna

distance of the point from the antenna

⇒ Mobility is directly proportional to Hall coefficient.

TRUE

FALSE

⇒

**Assertion (A):** When a wattmeter is used for low impedance loads, the pressure coil is connected across the load.

**Reason (R):** A wattmeter measures apparent power.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

A is true R is false

A is false R is true

⇒ Which of the following are true for magic tee in the given figure select the answer as per given c

1, 2 and 3

1, 2 and 4

2, 3 and 4

1, 3 and 4

⇒ The accuracy of measurement using CRO is about

± 0.5%

± 0.05 %

± 1%

± 3%

⇒ In a resistor the current is

*i*and the voltage is

*v*. The rate of dissipation of heat at any time

*t*is

*vi*

*vit*

*vt*

*vit*

^{2}

⇒ If we need a device to shut off a few ampere current in a few nano seconds, the proper devices is

VMOS

CMOS

BJT

UJT

⇒ An electrolytic capacitor can be used for

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dc only

both ac and dc

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⇒ At absolute temperature

the forbidden energy gap in germanium is higher than that in silicon

the forbidden energy gap in germanium and silicon are equal

the forbidden energy gap in silicon is higher than that in germanium

none of the above

⇒ In a full wave rectifier circuit using centre tapped transformer, the peak voltage across half of the secondary winding is 30 V. Then PIV is

30 V

60 V

15 V

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⇒ It is desired to route data from many registers to one register. The device needed is

decoder

multiplexer

demultiplexer

counter

⇒ In which of the following logical group instructions of 8085 do the contents of accumulator remain unchanged?

`ORA `*r*

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`ORI data`

`CMP `*r*

⇒ A voltage

*v*= 100 sin ω

*t*+ 10 sin 5 ω

*t*is applied to a pure capacitor having capacitance of 1 μF. If ω = 314 rad/sec, the current through the capacitor is

0.0314 cos 314

*t*+ 0.0157 cos 1570

*t*

0.0314 sin 314

*t*+ 0.0157 sin 1570

*t*

0.0314 cos 314

*t*+ 0.0314 cos 1570

*t*

0.0157 cos 314

*t*+ 0.0157 cos 1570

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⇒ In a sine wave, maximum rate of change of voltage occurs at

ascent of the waveform

+ ve maximum

- ve maximum

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⇒ Occasionally a discrete amplifier user RF chokes instead of collector resistors. Such amplifiers are inherently

low pass amplifiers

high pass amplifiers

band pass amplifiers

none of the above

⇒ RTD is generally suitable for temperature up to

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about 1500°C

about 200°C

about 50°C

⇒ 7BF

_{16}= __________

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0111 1011 1110

0111 1011 1111

0111 1011 0111

0111 1011 0011

⇒ A multimeter can be used as ohmmeter.

TRUE

FALSE

⇒ If a signal

*g*(

*t*) has energy E, then the energy of the signal

*g*(2

*t*) is equal to ...

E/2

E/4

*E*

2E

⇒ A geostationary satellite is one which

hangs motionless in space about 36000 km about Earth

travels around the Earth in 24 hours

remains stationary above the Earth

appears stationary to everybody on Earth

⇒ The Hall constant in Si bar is given by 5 x 10

^{3}cm

^{3}/ coulomb, the hole concentration in the bar is given by

10

^{5}/cm

^{3}

1.25 x 10

^{15}/cm

^{3}

1.5 x 10

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^{3}

1.6 x 10

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^{3}

⇒ Of the various capacitances associated with a junction transistor the gain bandwidth product is affected to maximum extend by

base collector parasitic capacitor

base collector space charge layer capacitance

base emitter space charge layer capacitance

base emitter diffusion capacitance

⇒ For a P-N junction diode, the current in reverse bias may be

few amperes

between 0.5 A and 1 A

few milliamperes

few micro or nanoamperes

⇒ If the thermal resistance of a transistor is lower it means

higher junction temperature

lower junction temperature

higher or lower junction temperature depending on circuit conditions

higher or lower junction temperature depending on transistor