Question is ⇒ The output V-I characteristics of an Enhancement type MOSFET has, Options are ⇒ (A) only an ohmic region, (B) only a saturation region, (C) an ohmic region at low voltage value followed by a saturation region at higher voltages., (D) an ohmic region at large voltage values. Preceded by a saturation region at lower voltages., (E) , Leave your comments or Download question paper.

Question is ⇒ The output V-I characteristics of an Enhancement type MOSFET has, Options are ⇒ (A) only an ohmic region, (B) only a saturation region, (C) an ohmic region at low voltage value followed by a saturation region at higher voltages., (D) an ohmic region at large voltage values. Preceded by a saturation region at lower voltages., (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The output V-I characteristics of an Enhancement type MOSFET has
A.	only an ohmic region [Wrong Answer]
B.	only a saturation region [Wrong Answer]
C.	an ohmic region at low voltage value followed by a saturation region at higher voltages. [Correct Answer]
D.	an ohmic region at large voltage values. Preceded by a saturation region at lower voltages. [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : C Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ AGC voltage is applied to the stages which are
before the detector stage
after the detector stage
either before or after the detector stage
none of the above

⇒ In telecast
video and audio signals are frequency modulated
video signals are frequency modulated but audio signals are amplitude modulated
both audio and video signals are amplitude modulated
video signals are amplitude modulated and audio signals are frequency modulated

⇒ If the value of C₂ and C₃ are doubled, the oscillation frequency will be
quadrupled
doubled
unchanged
halved

⇒ Schottky clamping is resorted to in TTL gates
to reduce propagation delay
to increase noise margin
to increase packing density
to increase fan out

⇒ Which one of the following is true for EM wave propagation through rectangular waveguide of cross-section 2a x a
critical wavelength for TE₁₀ mode is the same as that for TE₀₂ mode
critical wavelength for TE₁₀ mode is one half of that for TE₁₀ mode
critical wavelength for TE₁₀ mode is the same as that for TM₁₀ mode
critical wavelength for TE₁₀ mode is double that for TE₀₁mode

⇒ An atom of a rare gas is placed is an electric field E. Then
the nucleus will be shifted in the direction of E by an amount which is proportional to E.
the nucleus will not be shifted.
the nucleus will be shifted in the direction of E by an amount which is independent of E.
the nucleus will be shifted in a direction opposite to that of E.

⇒ Rotation of a geosynchronous satellite means its
drift from stationary position
wobbling
three-axis stabilization
three-dimensional stabilization

⇒ If f(t) = r (t - a), F(s) =
e^-as/s²
a/(s + a)
1/(s + a)
e^-as/s

⇒ In free space, line of sight propagation case, the transmission losses between transmitter and receiver increase with frequency (f) as
f
f²
f⁴
f^1/2

⇒ A moving coil instrument has a resistance of 0.6 Ω and full scale deflection at 0.1 A. To convert it into an ammeter of 0-15 A range, the resistance of shunt should be
0.6 Ω
0.06 Ω
0.1 Ω
0.004 Ω

⇒ In the graph of figure, the total number of tree
4
5
6
8

⇒ 300 to 3000 MHz frequency is categorized as
MF
HF
UHF
SHF

⇒ When the gate terminal of MOSFET is positive, it is said to operate in
depletion mode
conduction mode
enhancement mode
none of the above

⇒ Sound wave travels as
longitudinal waves
transverse waves
both longitudinal and transverse waves
either longitudinal or transverse wave

⇒ A full bridge inverter is fed by a battery of 30 V. The rms value of output voltage is
15 V
152 V
30 V
302 V

⇒ Which of the following devices has metal-silicon junction?
General purpose power diode
Schottky diode
SCR
MOSFET

⇒ In 8085 microprocessor, which of the following interrupts is unmaskable interrupts?
RST 5.5
RST 7.5
TRAP
INTR

⇒ If e = 10 sin(10⁸ t + 3 sin 10⁴ t) then the modulation index is
1
2
3
4

⇒ The main advantage of TDM over FDM is
TDM requires more bandwidth than FDM
less complicated in hardware than FDM
better SNR
required filter

⇒ In a minimum function
the degree of numerator and denominator are equal
the degree of numerator and denominator are unequal
the degree of numerator is one more than degree of denominator
the degree of numerator is one less than degree of denominator

⇒ BFO stands for
Beat Frequency Oscillator
Broad Frequency Oscillator
Blocking Frequency Oscillator
Ballistic Frequency Oscillator

⇒

Assertion (A): Dielectric constant is independent of temperature unless the temperature is extremely high.

Reason (R): For normal temperatures the number of atoms per unit volume is constant.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true but R is false
A is false but R is true

⇒ In a linear circuit, the superposition principle can be applied to calculate the
voltage and power
voltage and current
current and power
voltage, current and power

⇒ A sinusoidal voltage is written as v = I_m (R² + X_C²)^0.5 sin 314 t. Its peak value and frequency are
I_m and 50
I_m (R₂ + X²_C)^0.5 and 50
0.707 I_m (R₂ + X²_C)^0.5 and 50
2 I_m (R₂ + X²_C)^0.5 and 50

⇒ If the secondary winding of CT is opened when primary coil is carrying current
transformer will burn immediately
there will be weak flux density in core
there will be very high induced voltage in secondary
there will be high current in secondary

⇒ Power transistors are invariably provided with
soldered connections
heat sink
metallic casing
none of the above

⇒ e^-3^t is a
energy signal
power signal
Both (a) and (b)
none

⇒ The critical frequency of 'F' layer is greater than 30 MHz.
TRUE
FALSE

⇒

Assertion (A): Hollow waveguides are frequently used as transmission lines at microwave frequencies.

Reason (R): Waveguide has high power handling capacity, low loss and simple structure.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ The number of spectral component of impulse wave is
1
0
2
∞