Question is ⇒ The open loop gain of an ideal op-amp is, Options are ⇒ (A) infinite, (B) very high, (C) neither high nor low, (D) low, (E) , Leave your comments or Download question paper.

Question is ⇒ The open loop gain of an ideal op-amp is, Options are ⇒ (A) infinite, (B) very high, (C) neither high nor low, (D) low, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The open loop gain of an ideal op-amp is
A.	infinite [Correct Answer]
B.	very high [Wrong Answer]
C.	neither high nor low [Wrong Answer]
D.	low [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ In a television transmitter, the output stage is most likely to be
screen modulated class C amplifier
plate modulated class C amplifier
grid modulated class A amplifier
grid modulated class C amplifier

⇒ Transition capacitance is associated with __________ and depletion capacitance is associated with __________ diodes.
reverse bias and forward bias
forward bias and reverse bias
reverse bias and reverse bias
forward bias and forward bias

⇒ A wire strain gauge has a gauge factor of 2, resistance of 125 Ω and length 1 m. If length of wire changes by .005 m, change in resistance will be
0.25 Ω
0.5 Ω
1.25 Ω
2.5 Ω

⇒ Which of the following statement regarding single-sideband (SSB) transmission is not correct?
In such transmission only or sideband is transmitted, leaving of the other sideband and the carrier
It has gained general acceptance of use in home-entertainment equipment
It is generally reserved for point-to-point communication
The amount of power and bandwidth necessary to be transmitted for a given amount of information are appreciable reduced

⇒ Low-orbit satellites are not used for communications because they
produce sonic booms
do not provide 24 hour/ day contact to the users on Earth
heat up and melt
none

⇒ In a turnstile antenna two-half wave resonant wire radiators are placed at 90° to each other in the same plane and are excited
in phase
in phase opposition
90° out of phase with each other
45° out of phase with each other

⇒ Introducing a resistor in the emitter of a common amplifier stabilizes the d.c. operating point against variations in
only the temperature
only β of the transistor
both temperature and β
none of these

⇒ An RL impedance function is to be synthesised in second Foster form. The proper function to be expanded is
Z(s)
sZ(s)
1/Z(s)
Z(s)/s

⇒ A (0.75 - j50) ohm load is connected to a coaxial transmission line of Z₀ = 75 ohms at a frequency of 10 GHz Which of the following will be the best method of matching?
Connecting an inductance at the end
Connecting a short circuited stub at the load
Connecting a capacitance at some distance from the load
Connecting a short circuited stub at some specified distance from the load

⇒ A full adder can be made out of
two half adders
two half adders and a OR gate
two half adders and a NOT gate
three half adders

⇒ Which of the following are the properties of a medium?
Permeability, flux, magnesium
Permittivity, permeability, insulation
Permeability, resistivity, conductivity
Permittivity, permeability, conductivity

⇒ The hexadecimal number system is
widely used in analyzing and programming microprocessors
an obsolete system no more in use
used in calculators only
none of the above

⇒ The gain of an half wavelength antenna is
2.15 dB
10 dB
1.78 dB
100 dB

⇒ For a npn BJT transistor f_β is 1.64 x 10⁸ Hz. C_μ = 10^-14 F; C_p = 4 x 10^-13 F and DC current gain is 90. Find f_T and g_m (f_β = cut off frequency, C_μ = capacitance, C_p = parasitic capacitance, g_m = transconductance, f_T = gain BW product)
f_T = 1.47 x 10¹⁰ Hz ; g_m = 38 milli mho
f_T = 1.64 x 10⁸ Hz ; g_m = 30 milli mho
f_T = 1.47 x 10⁹ Hz ; g_m = 38 mho
f_T = 1.33 x 10¹² Hz; g_m = 0.37 m-mho

⇒ Which of the following is not a travelling wave?
e = E_m sin (βx - ωt)
e = E_m cos (βx - ωt)
e = E_m sin (ωt - βx)
e = E_m sin (βx)

⇒

Match the following:

	List I		List II
A.	Synchro	1.	Amplifier
B.	Amplidyne	2.	Actuator
C.	Servo	3.	Compensator
D.	RC network	4.	Transducer

A-1, B-2, C-3, D-4
A-4, B-3, C-2, D-1
A-3, B-2, C-4, D-1
A-4, B-1, C-2, D-3

⇒ If operator 'a' = 1 ∠120° then (1 + a + a²) =
-a
-a²
1
0

⇒ A single phase energy meter has the rating 1200 resolutions/ kWh. If a 500 W electric gadget is used for 4 hours, the energy meter will make
1200 revolutions
1800 revolutions
2100 revolutions
2400 revolutions

⇒ In a rectangular waveguide
the broad width is generally labelled 'a' and height 'b'
the broad width is generally labelled 'b' and height 'a'
any one of the dimensions may be labelled 'a' and the other 'b'
the length is labelled as 'a'

⇒ Schrodinger wave equation is partial differential equation.
TRUE
FALSE

⇒ The function of a choke in a fluorescent lamp is
at the time of starting only
during the working of time but not at starting time
both at the time of starting and during working
none of the above

⇒ What is the characteristic impedance at 10 MHz?
547.7 Ω
54.7 Ω
5.47 Ω
.547 Ω

⇒ Diffraction of electromagnetic waves
may occur around the edge of a sharp obstacle
is caused by reflections from the ground
arises only with the spherical wave fronts
will occur when the waves pass through a large slot

⇒ In a CB amplifier the maximum efficiency could be
0.99
0.85
0.5
0.25

⇒ The op-amp used in nonlinear mode is
integrators
active filters
Schmitt triggers
instrumentation amplifiers

⇒ A microcomputer has a 64 K memory. What is the hexadecimal notation for the first memory location?
0
FFFF
0FFF
3FFF

⇒ In indicating instruments the controlling torque is provided by a spring.
TRUE
FALSE

⇒ Calculate the stability factor and change in I_c from 25°C to 100°C for, β = 50, R_B/R_E = 250, ΔI_CO = 19.9 nA for emitter bias configuration
42.553, 0.85 μF
40.91, 0.58 μF
38.53, 0.85 μF
41.10, 0.39 μF

⇒ The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).
generally less than that a doped semiconductor
σ_i = en_i (μ_n - μ_p)
σ_i = en_i (μ_n + μ_p)
σ_i = n_i (μ_n - μ_p)

⇒ Image frequency rejection mainly depends upon
detector
mixer
IF
RF