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The MOSFET is almost ideal as a switching device because | |
A. | it has linear characteristics [Wrong Answer] |
B. | it works progressively [Wrong Answer] |
C. | it consumes low power [Correct Answer] |
D. | it has longer life [Wrong Answer] |
View Answer
Explanation:-
Answer : C Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ The network shown in figur
reciprocal
reciprocal and symmetrical
non-reciprocal
unsymmetrical
⇒ Assuming accumulator contain A 64 and the carry is set (1).What will register A and (CY) contain after RAR?
4 DH, 0
D 3H, 0
4 DH, 1
53 H, 0
⇒ The current I_{CBO} flows in
base and emitter leads
base and collector leads
collector and emitter leads
collector, emitter and base leads
⇒ The poles of an RC function
are simple and lie or negative real axis
are simple and lie on ω axis
must be complex conjugate
may be anywhere on s plane
⇒ A sine wave is passed through an amplifier which severely limits it symmetrically. If then passes to a second amplifier which is narrow band and tuned to the frequency of the original sine wave. What will be the output wave from this second amplifier?
A square wave of the same frequency as that of the original sine wave
A square wave of double the frequency of that of original sine wave
A sine wave of constant amplitude at the frequency of the original sine wave
A sine wave of constant amplitude at double frequency of the original sine wave
⇒ A series RC circuit has fixed R and C and variable f. The current locus will lie in the first quadrant.
TRUE
FALSE
⇒ BPSK stands for
Binary Phase Shifting Key
Broad Phase Shifting Key
Bit Phase Shifting Key
Binary Pulse Shifting Key
⇒
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true
⇒ (1 2 1)_{x} = (1 0 0)_{4} Then x is equal to
2
3
5
does not exist
⇒ The output of the circuit shown below will be of the frequ
125 Hz
250 Hz
500 Hz
750 Hz
⇒ The number of categories in which registers are classified in μP are
2
3
4
5
⇒ Which statement is correct?
BJT and MOSFET are current controlled devices
BJT is voltage controlled and MOSFET is current controlled device
BJT and MOSFET are voltage controlled devices
BJT is current controlled and MOSFET is voltage controlled device
⇒ The depletion layer width of Junction
decreases with light doping
is independent of applied voltage
is increased under reverse bias
increases with heavy doping
⇒
A-1, B-3, C-4
A-2, B-3, C-4
A-3, B-1, C-2
A-1, B-2, C-3
⇒ For a 12 pulse operation, the two 6 pulse units are fed by
Y - Y and Y - Y transformers
Δ - Δ and Δ - Δ transformers
Y - Y and Y - Δ transformers
Y - Δ and Y - Δ transformers
⇒ A wavelength of 1 mm could be expected in
VLF
HF
EHF
SHF
⇒ If the repeller voltage in a klystron oscillator is increased the transit time of electron
will be increased
will be decreased
will remain the same
either (a) or (b)
⇒ Find the maximum power that can be delivered to a
0.025 W
2.5 W
2.5 W
0.25 W
⇒ The sum S of A and B in a Half Adder can be implemented by using K NAND gates. The value of K is
3
4
5
none of these
⇒ In the circuit figure LED will be on when v_{1less than 6 Vmore than 6 Vless than 12 Vmore than 12 V}
⇒ In a JFET V_{DS} exceeds the rated value. Then it operates in
active region
ohmic region
cut off region
either cut off or active region
⇒ For the differential equation (D^{3} - D^{2} + D -1) [y(t)] = 0 the root of auxiliary equation
-j, j, 1
-j, j, 2
1, 2, j
1, 2, -j
⇒ For the amplifier in figure, β = 800. The mid-band voltage gain V_{0}/V_{i0< 1≈ 1800}
⇒ In cellular telephone each cell is designed to handle
45 two way communications
90 two way communications
45 one way communications
180 two way communications
⇒ A uniform plane wave in the free space is normally incident on an infinitely thick dielectric slab (dielectric constant ε_{r} = 9). The magnitude of the reflection coefficient is
0
0.3
0.5
0.8
⇒ When a reverse bias is applied to a p-n junction, the width of depletion layer.
decreases
increases
remains the same
may increase or decrease
⇒ If E (i.e., available energy state) = E_{F}(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.
TRUE
FALSE
⇒ The gate electrode in the FET corresponds to the
collector in a bipolar transistor
base in a bipolar transistor
emitter in a bipolar transistor
none of the above
⇒ Which one of the following circuits is used for converting a sine wave into a square wave?
Astable multivibration
Monostable multivibration
Bistable multivibration
Schmitt trigger
⇒ An image uses 512 x 512 picture elements. Each of the picture elements can take any of the 8 distinguishable intensity levels. The maximum entropy in the above image will be
2097152 bits
648 bits
786432 bits
144 bits
⇒ The network shown in figur
reciprocal
reciprocal and symmetrical
non-reciprocal
unsymmetrical
⇒ Assuming accumulator contain A 64 and the carry is set (1).What will register A and (CY) contain after RAR?
4 DH, 0
D 3H, 0
4 DH, 1
53 H, 0
⇒ The current I_{CBO} flows in
base and emitter leads
base and collector leads
collector and emitter leads
collector, emitter and base leads
⇒ The poles of an RC function
are simple and lie or negative real axis
are simple and lie on ω axis
must be complex conjugate
may be anywhere on s plane
⇒ A sine wave is passed through an amplifier which severely limits it symmetrically. If then passes to a second amplifier which is narrow band and tuned to the frequency of the original sine wave. What will be the output wave from this second amplifier?
A square wave of the same frequency as that of the original sine wave
A square wave of double the frequency of that of original sine wave
A sine wave of constant amplitude at the frequency of the original sine wave
A sine wave of constant amplitude at double frequency of the original sine wave
⇒ A series RC circuit has fixed R and C and variable f. The current locus will lie in the first quadrant.
TRUE
FALSE
⇒ BPSK stands for
Binary Phase Shifting Key
Broad Phase Shifting Key
Bit Phase Shifting Key
Binary Pulse Shifting Key
⇒
Assertion (A): Double Kelvin's bridge is used to measure low resistances.
Reason (R): In low resistance, the contact and lead resistances are very important.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true
⇒ (1 2 1)_{x} = (1 0 0)_{4} Then x is equal to
2
3
5
does not exist
⇒ The output of the circuit shown below will be of the frequ
125 Hz
250 Hz
500 Hz
750 Hz
⇒ The number of categories in which registers are classified in μP are
2
3
4
5
⇒ Which statement is correct?
BJT and MOSFET are current controlled devices
BJT is voltage controlled and MOSFET is current controlled device
BJT and MOSFET are voltage controlled devices
BJT is current controlled and MOSFET is voltage controlled device
⇒ The depletion layer width of Junction
decreases with light doping
is independent of applied voltage
is increased under reverse bias
increases with heavy doping
⇒
Match the following:
List I (Properties) | List II (Relations) | ||
---|---|---|---|
A. | Linear but NOT time-invariant | 1. | y(t) = t^{2}x(t) |
B. | Time-invariant but NOT linear | 2. | y(t) = t |x(t)| |
C. | Linear and time invariant | 3. | y(t) = |x(t)| |
4. | y(t) = x(t - 5) |
A-1, B-3, C-4
A-2, B-3, C-4
A-3, B-1, C-2
A-1, B-2, C-3
⇒ For a 12 pulse operation, the two 6 pulse units are fed by
Y - Y and Y - Y transformers
Δ - Δ and Δ - Δ transformers
Y - Y and Y - Δ transformers
Y - Δ and Y - Δ transformers
⇒ A wavelength of 1 mm could be expected in
VLF
HF
EHF
SHF
⇒ If the repeller voltage in a klystron oscillator is increased the transit time of electron
will be increased
will be decreased
will remain the same
either (a) or (b)
⇒ Find the maximum power that can be delivered to a
0.025 W
2.5 W
2.5 W
0.25 W
⇒ The sum S of A and B in a Half Adder can be implemented by using K NAND gates. The value of K is
3
4
5
none of these
⇒ In the circuit figure LED will be on when v_{1less than 6 Vmore than 6 Vless than 12 Vmore than 12 V}
⇒ In a JFET V_{DS} exceeds the rated value. Then it operates in
active region
ohmic region
cut off region
either cut off or active region
⇒ For the differential equation (D^{3} - D^{2} + D -1) [y(t)] = 0 the root of auxiliary equation
-j, j, 1
-j, j, 2
1, 2, j
1, 2, -j
⇒ For the amplifier in figure, β = 800. The mid-band voltage gain V_{0}/V_{i0< 1≈ 1800}
⇒ In cellular telephone each cell is designed to handle
45 two way communications
90 two way communications
45 one way communications
180 two way communications
⇒ A uniform plane wave in the free space is normally incident on an infinitely thick dielectric slab (dielectric constant ε_{r} = 9). The magnitude of the reflection coefficient is
0
0.3
0.5
0.8
⇒ When a reverse bias is applied to a p-n junction, the width of depletion layer.
decreases
increases
remains the same
may increase or decrease
⇒ If E (i.e., available energy state) = E_{F}(i.e., Fermi level), then probability that state E will be occupied is 0.5 for any temperature T.
TRUE
FALSE
⇒ The gate electrode in the FET corresponds to the
collector in a bipolar transistor
base in a bipolar transistor
emitter in a bipolar transistor
none of the above
⇒ Which one of the following circuits is used for converting a sine wave into a square wave?
Astable multivibration
Monostable multivibration
Bistable multivibration
Schmitt trigger
⇒ An image uses 512 x 512 picture elements. Each of the picture elements can take any of the 8 distinguishable intensity levels. The maximum entropy in the above image will be
2097152 bits
648 bits
786432 bits
144 bits