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The MOS symbol shown indicates that
| |
A. | 1, 3, 6 [Wrong Answer] |
B. | 1, 3, 5 [Wrong Answer] |
C. | 2, 4, 6 [Wrong Answer] |
D. | 2, 3, 5 [Correct Answer] |
View Answer
Explanation:-
Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ Signal flow graph is used to find :
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controllability of the system
transfer function of the system
poles of the system
⇒ In a multi-processor configuration two coprocessors are connected to host 8086 processor. The instruction sets of the two coprocessors
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may overlap
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stability of the system
controllability of the system
transfer function of the system
poles of the system
⇒ In a multi-processor configuration two coprocessors are connected to host 8086 processor. The instruction sets of the two coprocessors
must be same
may overlap
must be disjoint
must be the same as that of host
⇒ Which impurity atom will give p type semiconductor when added to intrinsic semiconductor?
Phosphorus
Boron
Arsenic
Antimony
⇒ If a number of even functions are added, the resultant sum is
even function
odd funtion
either even or odd function
mixture of odd amd even functions
⇒ The signal m(t) = 10 cos 100 pt is sampled at the rate of F_{s} = 75 H_{z, } then determine signal after sampling.
4 cos 100 pt + 8 sin 200 pt
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none
⇒ Consider the following program segment written for 8085 based sys
CE
20
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⇒ Occasionally a discrete amplifier user RF chokes instead of collector resistors. Such amplifiers are inherently
low pass amplifiers
high pass amplifiers
band pass amplifiers
none of the above
⇒ In a voltage regulator circuit using zener diode the load voltage is nearly constant only if
zener current is very small
zener current is very large
zener current is neither small nor large
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⇒ Which of the following statements regarding two transistor model of p-n-n-p device is correct?
It explain only the turn on portion of the device characteristics
It explain only the turn off portion of the device characteristics
It explain only the negative region portion of the device characteristics
It explain all the regions of the device characteristics
⇒ In p mode of operation of magnetron the spikes due to phase focussing effect rotate at an angular velocity corresponding to
one pole/cycle
two pole/cycle
four pole/cycle
six pole/cycle
⇒ De-emphasis circuit is used
to attenuate high frequencies
to attenuate low frequencies
to attenuate mid-band frequencies
None of the above
⇒ Which of the following devices has metal-silicon junction?
General purpose power diode
Schottky diode
SCR
MOSFET
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TRUE
FALSE
⇒ In figure the number of tree branches and links respectively
3 and 2
1 and 3
4 and 1
1 and 4
⇒ Which of the following are linear ICs?
RF and IF amplifiers
Wide band amplifier
Audio amplifiers
All of the above
⇒ Frequency shifting keying is basically a method involving
amplitude modulation
frequency modulation
phase modulation
none of the above
⇒ Which of the following form of angle modulation in this? If e = 10 sin(10^{8} t + 3 sin 10^{4} t)
AM
FM
AM or FM
AM or PCM
⇒ In a channel voice coder, the outputs of sixteen 20 Hz low pass filters are sampled, multiplexed and A/D converted. If sampling is at 40 samples/second and 3 bits/sample represents each voltage sample, the bit rate is about
1.9 k bits/sec
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Match the following:
List I (Transducer) | List II (Quantity measured) | ||
---|---|---|---|
A. | LVDT | 1. | Pressure |
B. | Bourden gauge | 2. | Temperature |
C. | Strain gauge | 3. | Displacement |
D. | Thermistor | 4. | Stress |
A-4, B-3, C-2, D-1
A-3, B-2, C-1, D-4
A-4, B-1, C-3, D-2
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⇒ In the given figure the circuits for input impedance of a microwave device with output ports match terminated. The devic
E plane tee
H plane tee
magic tee
hybrid ring
⇒ If Z is the number of zeros of 1 + G(s) H(s) in the right half s plane. N is the number of clockwise encircle elements of (-1 + jo) point. P is the number of poles of G(s) H(s) in right half s plane. The Nyquist stability criterion can be expressed as
Z = N + P
Z = P/N
Z = N - P
Z = PN
⇒ In the circuit of figure, the value of r_{e} is (neglecting v_{be100 Ω75 Ω50 Ω25 Ω}
⇒ The scaling factor of an MOS device using constant voltage scaling model, the gate area of the device will be scaled as
1/a
1/a^{2}
1/a^{3}
1/a^{4}
⇒ A n-type silicon sample contains a donor concentration of N_{d} = 2 x 10^{16} cm^{-3}. The minority carrier hole lifetime is t_{p0} = 5 μs. The thermal equilibrium generation rate of hole is:
1.125 x 10^{9} cm^{-3} s^{-1}
0.625 x 10^{9} cm^{-3} s^{-1}
4.5 x 10^{9} cm^{-3} s^{-1}
2.25 x 10^{9} cm^{-3} s^{-1}
⇒ At t = 0^{+}, the current i_{1- V/2R- V/4R- V/Rzero}
⇒ Troposphere is the upper part of the Earth's atmosphere which absorbs large quantities of Sun's radiations.
TRUE
FALSE
⇒ When a material is in superconducting state and a magnetic field is applied
the superconducting property is not affected
the superconducting property may be affected and resistivity may increase from zero to a low value
the superconducting property may be destroyed
the material may become an insulator
⇒ A TRIAC is a semiconductor device which acts as a
2 terminal unidirectional switch
2 terminal bidirectional switch
3 terminal bidirectional switch
4 terminal multidirectional switch
⇒ Kirchoff's laws are applicable to
steady state conditions only
transient conditions only
both steady state and transient condition
both steady state and transient condition but with some constraints