Question is ⇒ The function off an oxide layer in an IC device is to <ol style="list-style-type: decimal; padding-bottom:10px;"><li style="padding-top:10px;">mask against diffusion or ion implantation</li><li style="padding-top:10px;">insulate the surface electrically</li><li style="padding-top:10px;">increase the melting point of Si</li><li style="padding-top:10px;">produce a chemically stable protective layer</li></ol>, Options are ⇒ (A) 1, 2, 3, (B) 1, 3, 4, (C) 2, 3, 4, (D) 4, 1, 2, (E) , Leave your comments or Download question paper.

Question is ⇒ The function off an oxide layer in an IC device is to <ol style="list-style-type: decimal; padding-bottom:10px;"><li style="padding-top:10px;">mask against diffusion or ion implantation</li><li style="padding-top:10px;">insulate the surface electrically</li><li style="padding-top:10px;">increase the melting point of Si</li><li style="padding-top:10px;">produce a chemically stable protective layer</li></ol>, Options are ⇒ (A) 1, 2, 3, (B) 1, 3, 4, (C) 2, 3, 4, (D) 4, 1, 2, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The function off an oxide layer in an IC device is to mask against diffusion or ion implantation insulate the surface electrically increase the melting point of Si produce a chemically stable protective layer
A.	1, 2, 3 [Wrong Answer]
B.	1, 3, 4 [Wrong Answer]
C.	2, 3, 4 [Wrong Answer]
D.	4, 1, 2 [Correct Answer]
View Answer 1 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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