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Q1. | The frequency response of a microphone means |

A. | bandwidth of frequencies having output with in ± 1 dB of the output at 1000 Hz [Correct Answer] |

B. | bandwidth of frequencies having output with in ± 3 dB of the output at 1000 Hz [Wrong Answer] |

C. | bandwidth of frequencies having output with in ± 1 dB of the output at 500 Hz [Wrong Answer] |

D. | bandwidth of frequencies having output with in ± 3 dB of the output at 500 Hz [Wrong Answer] |

View Answer
Explanation:-
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**Also Read Similar Questions Below :**

⇒ 74 HC series can sink upto 4 mA. The 74 LS series has I

_{IL(max)}- 0.4 mA. How many 74 LS inputs be driven by 74 HC output?

100

none

8

10

⇒ Mobility of electrons and holes are equal.

TRUE

FALSE

⇒ Which one of the following is correct? Energy of a power signal is

finite

zero

infinite

between 1 and 2

⇒ In radar system if the antenna diameter is increased by a factor of 4, the minimum range will increased by a factor of

1

2

22

4

⇒ The transistor of following figure in Si diode with a base current of 40 μA and I

_{CBO}= 0, if V

_{BB}= 6V, R

_{E}= 2 kΩ and β = 90, I

_{BQ}= 20 μA then I

_{EQ1800 μA180 μA2000 μA3000 μA}

⇒ In a current transformers

the number of turns in primary and secondary windings are nearly equal

the number of primary turns is very small as compared to number of secondary turns.

the number of secondary turns is very small as compared to the number of primary turns

either (a) or (c).

⇒ In FM and AM the ratio of signal to noise ratio at the detector output least depends upon

bandwidth

transmission

carrier frequency

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⇒ The permeability of soft iron can be increased by

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reducing carbon percentage

alloying with cobalt

increasing percentage

⇒ A small signal source

*v*(

_{i}*t*) = A cos 20

*t*+ B sin10

^{6}

*t*is applied to a transistor amplifier as shown below. The transistor has β = 150 and

*h*= 3 kΩ. Which expression best approximates V

_{ie}_{0}(

*t<*

v

v

v

V

v

_{0}(*t*) = -1500 (A cos 20*t*+ B sin 10^{6}*t*)v

_{0}(*t*) = -150 (A cos 20*t*+ B sin 10^{6}*t*)v

_{0}(*t*) = -1500 B sin 10^{6}*t*V

_{0}(*t*) = -1500 sin 10^{6}*t*

⇒ The sign of a floating point number depends on

only the sign of mantissa

only the sign of exponent

the sign of both mantissa and exponent

either (a) or (b)

⇒ What is the maximum output voltage from the 741 op-amp?

Zero

Approximately 1 V

Approximately 3 V

Approximately 5 V

⇒ A material which is lightly repelled by a magnetic field is known as

diamagnetic material

non-magnetic material

ferromagnetic material

paramagnetic material

⇒ Surface impedance at high frequencies is a consideration for

ferrites

semiconductors

good conductors

dielectrics

⇒ In the given figure the phase angle of F

TRUE

FALSE

⇒ In the below figure, the load is highly inductive. The firing angle is a for each of the thyristors. The periods of conduction of Th

0 to p and p to 2p

a to p and p + a to 2p

a to p + a and p + p to 2p + a

a to p - a and p + a to 2p - a

⇒ If

⇒ An enhancement mode MOSFET is on when the gate voltage is

zero

positive

high

more threshold value

⇒ The gate current required to turn on an SCR is

few amperes

a few mA

almost equal to anode current

about 50% of anode current

⇒ A NOR gate has 3 inputs A, B, C. For which combination of inputs is output HIGH

A = B = C = 0

A = B = C = 1

A = B = 1 and C = 0

A = C = 1 and B = 0

⇒ In which of the following devices can the operation be visualised in terms of a series feedback loops?

TWT

Reflex klystron

Klystron amplifier

Backward wave oscillator

⇒ For the network shown below, determine

⇒ The sign of a floating point number depends on

only the sign of mantissa

only the sign of exponent

the sign of both mantissa and exponent

either (a) or (b)

⇒ What is the maximum output voltage from the 741 op-amp?

Zero

Approximately 1 V

Approximately 3 V

Approximately 5 V

⇒ A material which is lightly repelled by a magnetic field is known as

diamagnetic material

non-magnetic material

ferromagnetic material

paramagnetic material

⇒ Surface impedance at high frequencies is a consideration for

ferrites

semiconductors

good conductors

dielectrics

⇒ In the given figure the phase angle of F

*n*is either 0 or &TRUE

FALSE

⇒ In the below figure, the load is highly inductive. The firing angle is a for each of the thyristors. The periods of conduction of Th

_{1}and Th_{2}respectively0 to p and p to 2p

a to p and p + a to 2p

a to p + a and p + p to 2p + a

a to p - a and p + a to 2p - a

⇒ If

*p*is the probability of success and*q*is the probability of failure, then the probability that there are*r*successes in*n*trails is^{n}*c*_{r}*p*^{r}*q*^{n}^{-}^{r}^{n}*c*_{r}*p*^{n -}^{r}*q*^{r}^{n}*c*_{r}*p*^{r}*q*^{n}^{+}^{r}^{n}*c*_{r}*p*^{n}*q*^{n}^{- r}⇒ An enhancement mode MOSFET is on when the gate voltage is

zero

positive

high

more threshold value

⇒ The gate current required to turn on an SCR is

few amperes

a few mA

almost equal to anode current

about 50% of anode current

⇒ A NOR gate has 3 inputs A, B, C. For which combination of inputs is output HIGH

A = B = C = 0

A = B = C = 1

A = B = 1 and C = 0

A = C = 1 and B = 0

⇒ In which of the following devices can the operation be visualised in terms of a series feedback loops?

TWT

Reflex klystron

Klystron amplifier

Backward wave oscillator

⇒ For the network shown below, determine

*f*_{Hi}and*f*_{HO}, if,*r*= ∞, C_{0}*= 36 P*_{be}*f*, C*= 4 P*_{bc}*f*, C_{ce}= 1 P*f*, C_{wo}= 8 P*f*, C_{wi}= 6 P*f<*

738.24 KH

781.2 KH

838.32 KH

938.24 KH738.24 KH

*z*, 8.6 MH*z*781.2 KH

*z*, 10.6 MH*z*838.32 KH

*z*, 9.2 MH*z*938.24 KH

*z*, 8.2 MH*z*

⇒

A-1, B-3, C-2, D-4

A-6, B-5, C-2, D-3

A-6, B-1, C-3, D-2

A-5, B-6, C-1, D-3

⇒ The current wave shown in figure is applied at

0 V

10 V

20 V

40 V

⇒ A series resonant circuit is fed by a voltage having rms value V. At resonance, the voltage across inductance V

V

V

V

V

⇒ An 8156 has A

80 H

85 H

82 H, 83 H

80 H to 85 H

⇒

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

A is true but R is false

A is false but R is true

⇒ In an LC filter, the ripple factor,

increases with load current

increases with load resistance

remains constant with the load current

has the lowest value

⇒ Which of the following closely represents the resistance-temperature characteristics of thermistor?

R

R

R

R

⇒ The equivalent of the block diagram in figure is give

Figure (a)

Figure (b)

Figure (c)

Figure (d)

⇒ Find R

52.28 Ω

58.28 Ω

52.82 Ω

58.82 Ω

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Ring modulator | 1. | Clock recovery |

B. | VCO | 2. | Demodulation of FM |

C. | Foster Seeley discriminator | 3. | Frequency conversion |

D. | Mixer | 4. | Summing of two points |

5. | Generation of FM | ||

6. | Generation of DSB-SC |

A-1, B-3, C-2, D-4

A-6, B-5, C-2, D-3

A-6, B-1, C-3, D-2

A-5, B-6, C-1, D-3

⇒ The current wave shown in figure is applied at

*t*= 0 to a 0.1 F capacitor. At*t*= 1*s*, the voltage across capacito0 V

10 V

20 V

40 V

⇒ A series resonant circuit is fed by a voltage having rms value V. At resonance, the voltage across inductance V

_{L}and voltage across capacitance V_{C}are related asV

_{L}> V_{C}V

_{L}< V_{C}V

_{L}= V_{C}V

_{L}= 0.5 V_{C}⇒ An 8156 has A

_{15}connected to its CE input. A_{14}to A_{8}are unconnected, and AD_{7}to AC_{0}are connected.Ignoring shadows, the port addresses80 H

85 H

82 H, 83 H

80 H to 85 H

⇒

**Assertion (A):** Holes are majority carriers in *p* type semiconductor.

**Reason (R):** In *p* type semiconductor, the electrons produced by thermal agitation recombine with holes.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

A is true but R is false

A is false but R is true

⇒ In an LC filter, the ripple factor,

increases with load current

increases with load resistance

remains constant with the load current

has the lowest value

⇒ Which of the following closely represents the resistance-temperature characteristics of thermistor?

R

_{T}=*a*R_{0}e^{b/t}R

_{T}=*a*R_{0}E^{-b/t}R

_{T}= -*a*R_{0}e^{-b/t}R

_{T}= - R_{0}e^{b/t}⇒ The equivalent of the block diagram in figure is give

Figure (a)

Figure (b)

Figure (c)

Figure (d)

⇒ Find R

_{TH}across the terminals A a52.28 Ω

58.28 Ω

52.82 Ω

58.82 Ω