Question is ⇒ The following table gives some Laplace transforms and the functions<table><tbody><tr><td></td><td>f(t)</td><td> F(s)</td></tr><tr><td>1.</td><td>δ(t)</td><td> s</td></tr><tr><td>2. </td><td>u(t)</td><td> 1/s</td></tr><tr><td>3. </td><td>tu(t)</td><td> 2/s2</td></tr><tr><td>4. </td><td>t2u(t)</td><td> 2s3</td></tr></tbody></table>le>Of these the correctly matched pairs are, Options are ⇒ (A) 2 and 4, (B) 1 and 4, (C) 2 and 4, (D) 1 and 2, (E) , Leave your comments or Download question paper.

Question is ⇒ The following table gives some Laplace transforms and the functions<table><tbody><tr><td></td><td>f(t)</td><td> F(s)</td></tr><tr><td>1.</td><td>δ(t)</td><td> s</td></tr><tr><td>2. </td><td>u(t)</td><td> 1/s</td></tr><tr><td>3. </td><td>tu(t)</td><td> 2/s2</td></tr><tr><td>4. </td><td>t2u(t)</td><td> 2s3</td></tr></tbody></table>le>Of these the correctly matched pairs are, Options are ⇒ (A) 2 and 4, (B) 1 and 4, (C) 2 and 4, (D) 1 and 2, (E) , Leave your comments or Download question paper. Previous question Next question

Q1.

The following table gives some Laplace transforms and the functions

	f(t)	F(s)
1.	δ(t)	s
2.	u(t)	1/s
3.	tu(t)	2/s²
4.	t²u(t)	2s³

le>Of these the correctly matched pairs are

2 and 4

1 and 4

2 and 4

1 and 2

View Answer 1 -1

Explanation:-
Answer : A
Discuss it below :

!! OOPS Login [Click here] is required to post your answer/result
Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ Consider a 300 Ω, quarter wave long at 1 GHz transmission line as shown in figure. It is connected to a 10 V, 50 Ω source at one end is left open circuited at the other end. The magnitude of the voltage at the open circuit end of the line
10 V
5 V
60 V
60/7 volt

⇒ In Quine-Mclusky method of Boolean function reduction; __________ , are treated as __________ and therefore discrepancies may occur in the final solution, therefore this method is not applicable to the functions with __________ .
zeros, don't care conditions, zeros
one's, don't care conditions, one's
don't care conditions, zeros, don't care conditions
don't care conditions, don't care conditions, don't care conditions

⇒ Assuming accumulator contain A 64 and the carry is set (1). What will register A and (CY) contain after SBI 0B7H?
12 H, 0
12 H, 1
DDH, 0
DDH, 1

⇒ A chopper is a high efficiency circuit.
TRUE
FALSE

⇒ In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
Half wave rectifier
Full wave rectifier
Bridge type full wave rectifier
Three phase full wave rectifier

⇒ If f(t) = 1, F(jω) =
2p
p
2pδ (p)
pδ (ω)

⇒ Initially the number decimal 8 is stored. If instruction RAL is executed twice, the final number stored will be
decimals 8
decimal 16
decimal 32
decimal 2

⇒ In the forward blocking region of a silicon, controlled rectifier, the SCR is
in the off-state
in the ON state
reverse biased
at the point of breakdown

⇒ A voltage v = 100 sin ωt + 10 sin 5 ωt is applied to a pure capacitor having capacitance of 1 μF. If ω = 314 rad/sec, the current through the capacitor is
0.0314 cos 314 t + 0.0157 cos 1570 t
0.0314 sin 314 t + 0.0157 sin 1570 t
0.0314 cos 314 t + 0.0314 cos 1570 t
0.0157 cos 314 t + 0.0157 cos 1570 t

⇒ FF₁₆ when converted to 8421BCD =
0000 0101 0101
0010 0101 0101
1111 0101 0101
1000 0101 0101

⇒ In a N-P-N transistor, when emitter junction is forward biased and collector junction is reverse biased, the transistor will operate in
active region
saturation region
cut of region
inverted region

⇒ An amplifier without feedback has a voltage gain of 50, input resistance of 1 kΩ and output resistance of 2.5 kΩ. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is
1/11 kΩ
1/5 kΩ
5 kW
11 kW

⇒ What is the major cause of creeping in an energy-meter?
Over compensation for friction
Mechanical vibrations
Excessive voltage across the potential coil
Stray magnetic fields

⇒ In a half wave voltage doubler circuit the input frequency is 50 Hz. The ripple frequency is
25 Hz
50 Hz
100 Hz
150 Hz

⇒ The amount of photoelectric emission current depends on
frequency of incident radiation
intensity of incident radiation
both frequency and intensity of incident radiation
none of the above

⇒ When a bit is 0 is a DDR, it makes the corresponding port pin an __________ On the other hand, a 1 bit programs a __________ Pin.
output, input
output, output
input, input
input, output

⇒ The multivibrator circuit that has a typical application of converting sinusoidal input into a square wave output is
emitter coupled binary
Schmitt trigger
monoshot multivibrator
free-running multivibrator

⇒

Assertion (A): For same drain current rating N-channel MOSFET occupies more area than p-channel MOSFET.

Reason (R): Electron mobility is much higher than hole mobility.

Both A and R are individually true and R is the correct explanation of A
Both A and R are individually true but R is not the correct explanation of A
A is true but R is false
A is false but R is true

⇒ The disadvantage of direct coupled amplifiers is
drift
large size of transistor
low voltage gain
both (b) and (c)

⇒ In a microwave resistor the wall thickness is made as small as possible to
have high value of R
have low value of R
minimize capacitive effect
reduce inductance

⇒ The effective modulation index is:
0.91287
0.8306
1
none of these

⇒ The memory hierarchy in microprocessor based system is
register, cache, primary, mass, off line back up
cache, register, primary, mass, off line back up
cache, register, mass, primary, off line back up
register, cache, mass, primary, off line back up

⇒ At room temperature, the current in intrinsic semiconductor is due to
holes
electrons
ions
holes and electrons

⇒ Which one of the following is correct? Energy of a power signal is
finite
zero
infinite
between 1 and 2

⇒ The phenomenon of dielectric hysteresis occurs with
dc
ac
both ac and dc
none of the above

⇒ Generally the gain of a transistor amplifier falls at high frequencies due to the
internal capacitance of device
coupling capacitor at the I/P
skin effect
coupling capacitor at the O/P

⇒ The scaling factor of an MOS device using constant voltage scaling model, the gate area of the device will be scaled as
1/a
1/a²
1/a³
1/a⁴

⇒ A communication channel with AWGN operating at a signal to noise ratio SNR >> 1 and bandwidth B has capacity C₁. If the SNR is doubled keeping B constant, the resulting capacity C₂ is given by
C₂ ≈ 2C₁
C₂ ≈ C₁ + B
C₂ ≈ C₁ + 2B
C₂ ≈ C₁ + 0.3B

⇒ In Schottky TTL, a Schottky diode is used for
forming the gate
connecting the resistor
clamping of the basic collector junction
none of the above

⇒ Which of the following theorems enables a number of voltage (or current) sources to be combined directly into a single voltage (or current) source?
Superposition theorem
Compensation theorem
Millman's theorem
Thevenin's theorem