Question is ⇒ The Ebers-moll equation for IE in CB configuration is given by, Options are ⇒ (A) IE = anICIEC0, (B) IE = aIIC + IC0, (C) IE = anIC + IC0(eqVEB/KT-1), (D) IE = aIIC + IE0(eqVEB/KT - 1), (E) , Leave your comments or Download question paper.

Question is ⇒ The Ebers-moll equation for IE in CB configuration is given by, Options are ⇒ (A) IE = anICIEC0, (B) IE = aIIC + IC0, (C) IE = anIC + IC0(eqVEB/KT-1), (D) IE = aIIC + IE0(eqVEB/KT - 1), (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The Ebers-moll equation for I_E in CB configuration is given by
A.	I_E = a_nI_CI_EC0 [Wrong Answer]
B.	I_E = a_II_C + I_C0 [Wrong Answer]
C.	I_E = a_nI_C + I_C0(e^qVEB/KT-1) [Wrong Answer]
D.	I_E = a_II_C + I_E0(e^qV_EB/KT - 1) [Correct Answer]
View Answer 1 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ Which one of the following is D/A conversion technique?
Successive approximation
Weighted resistor
Dual slope
Single slope

⇒ If f_h(t) is Hilbert transform of f(t), then Hilbert transform of f_h(t) is
-f(t)
+f(t)
f²(t)
f(t)

⇒ As the magnitude of reverse bias is increased, the capacitance of varactor diode
increases
decreases
first increase, then decreases
first decreases then increases

⇒ At resonance the network function magnitude will be
k/a
k/b
c
k/a + b

⇒ FM signal can be generated by
diode reactance modulator
saturable reactor modulator
reactance tube modulator
none of the above

⇒

Match the following:

	List I		List II
A.	Very low response at very high frequencies	1.	Low-pass system
B.	Over shoot	2.	Velocity damping
C.	Synchro-control transformer output	3.	Natural frequency
		4.	Phase-sensitive modulation
		5.	Damping ratio

A-1, B-5, C-4
A-3, B-2, C-4
A-2, B-5, C-4
A-4, B-1, C-3

⇒ The mean life time of carrier may range from 10^-9 seconds to hundreds of μ-seconds.
TRUE
FALSE

⇒ Which one of the following is transferred locking electron device C antenna?
BARITT diode
IMPATT diode
Gunn diode
Step recovery diode

⇒

Match the following:

	List I (BJT amplifier)		List II (Characteristics)
A.	CE	1.	good voltage gain, good current gain
B.	CC	2.	voltage gain less than 1, high current gain
C.	CB	3.	current gain less than 1, voltage gain high

A-1, B-2, C-3
A-1, B-2, C-3
A-3, B-1, C-2
A-3, B-2, C-1

⇒ Two products are sold from a vending machine, which has two push buttons P₁ and P₂. When a button is pressed, the price of the corresponding product is displayed in a 7-segment display. If no buttons are pressed, '0' is displayed, signifying 'Rs' .0'. If only P₁ is pressed, '2' is displayed, signifying 'Rs.
3 NOT and 4 OR
2 NOT and 4 OR
1 NOT and 3 OR
2 NOT and 3 OR

⇒ In CE approximation, the upper end of d.c. load line is called the __________ point and the lower end is the __________ point.
Q, base
base, Q
saturation, cut off
cut off, saturation

⇒ For FM, which of the following statement is not true?
The bandwidth increases as modulation index is increased
The total power remains constant with respect to modulation index
The carrier never becomes zero
All of the above

⇒ In sound recording the degree of pre-emphasis is about 6 dB/ octave.
TRUE
FALSE

⇒ The forbidden energy gap between the valence band and conduction band will be wide in case of
semiconductors
all metals
good conductors of electricity
insulators

⇒ In level clocking the output can change
on rising edge of clock cycle
on falling edge of clock cycle
during entire half cycle of the clock
none of the above

⇒ Let the initial contents of ACC and CY in 8085 be

CY = 1
ACC = 10000001

After the instruction RAL is executed twice the contents of CY and ACC respectively will be
1 and 00000011
0 and 00000111
1 and 00000111
0 and 00000011

⇒ In integral cycle control the period of on-off control should be more than mechanical time constant of load.
TRUE
FALSE

⇒

Assertion (A): Electron concentration n, hole concentration p and charge concentration n_i are related by n_i² = np.

Reason (R): p type semiconductor is obtained by adding trivalent impurity to intrinsic semiconductor.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true but R is false
A is false but R is true

⇒ In an amplifier if conductor during the cycle is from 0 to 90° and again from 180° to 270°, the amplifier will be termed as
class A
class B
class C
class AB

⇒ The amplitude of a modulated RF aerial current is 6 A on the peaks of modulation and 4 A on the troughs of modulation. The value of carrier amplitude is
5
15
20
30

⇒ A digital voltmeter can count from 0 to 9999. If full scale reading is 9.999 V, the resolution of full scale reading is
0.001
1000
2 digit
1 mV

⇒ A transistor has a power rating of 8 W for a case temperature of 25°C. If derating factor is 30 mW/°C, the power rating for 55°C, case temperature is
8 W
7.5 W
7.1 W
6.8 W

⇒ In all insulators the bonding is covalent.
TRUE
FALSE

⇒ Vectored interrupt is an interrupt that takes the program to a vector location. TRAP vectors to 0024 FI, RST 7.5 to 003 CH, RST 6.5 to 0034 H and
RST 5.5
RST 6.5
24 H to 48 H
RST 5.5 to 002 CH

⇒ A pair of 21114s can store __________ words of __________ bits each.
2114, 8
1024, 8
4228, 16
2114, 16

⇒ Nichrome is used for
overhead line wires
heater coils
lamp filaments
all of the above

⇒ The decimal equivalent of binary 1101.11 is
9.75
13.75
11.5
11.75

⇒ The input to a parity detector is 1001. The output is
0
1
0 or 1
indeterminate

⇒

Assertion (A): An ideal rectifier should have unity harmonic factor

Reason (R): An ideal rectifier should have unity displacement factor.

Both A and R are correct and R is correct explanation of A
Both A and R correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ The resolution of a DAC depends on which of the following?
The number of bits
Monotonicity
Reference voltage
The values of resistance