Question is ⇒ The cut in voltage, Options are ⇒ (A) is the same for silicon and germanium diodes, (B) is a forward voltage, (C) is a reverse voltage, (D) is a forward voltage below which the current is very small, (E) , Leave your comments or Download question paper.

Question is ⇒ The cut in voltage, Options are ⇒ (A) is the same for silicon and germanium diodes, (B) is a forward voltage, (C) is a reverse voltage, (D) is a forward voltage below which the current is very small, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	The cut in voltage
A.	is the same for silicon and germanium diodes [Wrong Answer]
B.	is a forward voltage [Wrong Answer]
C.	is a reverse voltage [Wrong Answer]
D.	is a forward voltage below which the current is very small [Correct Answer]
View Answer 1 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ Overall efficiency of class B amplifier is
0.72
0.75
0.785
0.7

⇒ A two branch parallel tuned circuit has a capacitance C in one of the two branches and resistance R in second branchs. As C is decreased the dynamic resistance
increases
decreases
remains constant
may increases or decreases

⇒ If f(t) is in volts, then F(jω) is in
volts
volt seconds
volts/sec
volt-sec²

⇒ When a TTL is driving an CMOS gates it is necessary to ensure that
V_OL(for TTL) ≤ V_IL (for CMOS) and V_0H (for TTL) ≥ VIH (for CMOS)
V_0L (for TTL) ≥ V_IL (for CMOS)
V_0H (for TTL) ≤ V_IH (for CMOS)
V_0L (for TTL) ≥ V_IL (for CMOS) and V_0H (for TTL) ≤ VIH (for CMOS)

⇒ Strip lines are used at
microwave frequency
low frequency
High frequency
at any frequency

⇒ A transmitter serial current contains
carrier frequencies
audio frequencies
radio frequencies
none of the above

⇒

Assertion (A): Oxide coated cathodes are very commonly used.

Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒

Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.

Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ In the circuit of figure, v_{03 v₁ + 4 v₂
-3 v₁ - 4 v₂
4 v₁ + 3 v₂
-4 v₁ - 3 v₂}

⇒ Which one of the following can be used for amplification of microwave energy?
TWT
Magnetron
Reflex klystron
Gunn diode

⇒ The current through a resistance R is shown in figure. The computed value of power
400 ± 0.42 W
400 ± 4.6 W
400 ± 8.85 W
400 ± 10.65 W

⇒ Frequency band used for radar is generally
VLF
VHF
UHF
EHF

⇒ In measurements using strain gauge, the dummy strain gauge is used to
compensate for resistance of strain gauge
compensate for change in temperature
compensate for error due to change in voltage of battery
compensate for error in voltmeter

⇒ Tesla is unit of
Φ
B
H
MMF

⇒ In the words Kb or Mb used describing memory capacity, the letter b denotes
bits
bytes
bits or bytes depending on type of memory
bubbles

⇒ The circuit in figur
positive clamper
negative clamper
positive peak clipper
negative peak clipper

⇒ In the given circuit, viewed from AB, the circuit can be reduced to an equivalent circui
5 volts source in series with 10 Ω resistor
7 volts source in series with 2.4 Ω resistor
15 volts source in series with 2.4 Ω resistor
1 volt source in series with 10 Ω resistor

⇒ In the circuit shown in the given figure the diode states at the extremely large negative values of the input voltage v_i a
D₁ off, D₂ off
D₁ on, D₂ off
D₁ off, D₂ on
D₁ on, D₁ on, D₂ on

⇒

Assertion (A): A BJT can be used as a switch.

Reason (R): In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ All poles and zeros of a driving point immittance function of an L-C network
should lie on the jω axis
should lie on the +ve real axis
should lie on the - ve real axis
can lie anywhere in s-plane

⇒ A memoryless source emits n symbols each with a probability p. The entropy of the source as a function of n
increases as log n
decreases as log (1/n)
increases as n
increases as n log n

⇒ In a radar system the solution to blind speed problem is to
use MTI
use monopoles
vary PRF
change Doppler frequency

⇒ In 8085 microprocessor, what is the length of temporary register?
6 bits
8 bits
12 bits
16 bits

⇒ In an RC impedance function
the highest critical frequency is a pole
the highest critical frequency is a zero
the highest critical frequency is a pole or zero
the highest critical frequency is a pole at s = 0

⇒ Figure represen
Esaki diode
Triac
Varactor
Gunn diode

⇒ If a number of even functions are added, the resultant sum is
even function
odd funtion
either even or odd function
mixture of odd amd even functions

⇒ The core of an atom consists of
nucleus
nucleus and all orbits
nucleus and inner orbits
none of the above

⇒ In a 3 phase semiconverter, the firing frequency is
equal to line frequency
3 times the line frequency
6 times the line frequency
12 times the line frequency

⇒ System
causal
stable
non causal
anticausal

⇒ The power gain of a half-wave dipole with respect to an isotropic radiator is
2.15 db
3 db
4.15 db
6 db