Users Also Read

MCQ's Search Engine

Electrical Engineering

Mechanical Engineering

Civil Engineering

Automobile Engineering

Chemical Engineering

Computer Engineering

Electronics Engineering

Medical Science Engg

Q1. | The amount of photoelectric emission current depends on |

A. | frequency of incident radiation [Wrong Answer] |

B. | intensity of incident radiation [Correct Answer] |

C. | both frequency and intensity of incident radiation [Wrong Answer] |

D. | none of the above [Wrong Answer] |

View Answer
Explanation:-
Answer : BDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ An AND gate has two inputs A and B and one inhibit input 3, Output is 1 if

A = 1, B = 1, S = 1

A = 1, B = 1, S = 0

A = 1, B = 0, S = 1

A = 1, B = 0, S = 0

⇒ In sound recording the degree of pre-emphasis is about 6 dB/ octave.

TRUE

FALSE

⇒ Consider the differential amplifier shown in figure. (Assume β is very hi

2 mA

1 mA

0.5 mA

3 mA

⇒ The inverse Laplace transform of 1/(

*s*-

*a*)

^{2}is

*e*

^{at}*t*

*e*

^{at}*t*

^{2}

*e*

^{at}*e*/

^{at}*t*

⇒ In rectangular waveguides the ratio of width to height is about

0.5

1

2

4

⇒ There are four different algorithms A1, A2, A3 and A4 to solve, a given problem with the complexity order log(n), log(log(n)), n log and n/log(n) respectively. Which is the best algorithm?

A1

A2

A3

A4

⇒ As compared to AM, FM requires

narrow channel

same channel

2 to 3 times as large channel

7 to 15 times as large channel

⇒ When the phase velocity of an EM wave depends on frequency in any medium the phenomenon is called

scattering

polarisation

absorption

dispersion

⇒ For the logic circuit shown in figure, the simplified Boolean expression for the output

A + B + C

AB

B

C

⇒ In a metal the probability of a state 0.1 eV below Fermi level being occupied

is more than the probability of state 0.1 eV above Fermi level being occupied

is the same as the probability of state 0.1 eV above Fermi level being occupied

is less than the probability of state 0.1 eV above Fermi level being occupied

may be equal to or more or less than the probability of state 0.1 eV above Fermi level being occupied

⇒ The frequency range of 300 kHz to 3000 kHz is known as

low frequency

medium frequency

high frequency

very high frequency

⇒ In an ordinary thyristor

turn on and turn off times are equal

turn on time is more than turn off time

turn off time is more than turn on time

turn on time may be equal, less than or more than turn off time

⇒ A voltage v(

*t*) which is a gaussian ergodic random process witha mean of zero and a varance of 4 volt

^{2}is measured by a meter which first square and then reads its dc component. The reading will be

0

4

16

2

⇒ To produce magnetic flux, mmf is necessary.

TRUE

FALSE

⇒ Fields are said to be circularly polarised if their magnitudes are

equal and they are in phase

equal but they differ in phase by ± 90°

unequal and differ in phase by ± 90°

unequal but are in phase

⇒ If the temperature of on extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then

the majority carrier density doubles

the minority carrier density doubles

the minority carrier density becomes 4 times the original value

both majority and minority carrier densities double

⇒ An electric heater is controlled by thyristors through on-off control. If a = 0.4, the heating is

16% maximum

40% of maximum

60% of maximum

84% of maximum

⇒ When a function Z(

*s*) having a pole at infinity is realized, we get

a capacitance in series

a resistance in series

an inductance in series

a resistance or inductance in series

⇒ A sinusoidal carrier voltage, having frequency 1000 Hz is amplitude modulated by a sinusoidal voltage of frequency 15 kHz. The frequency of upper and lower sidebands will be

1015 kHz and 985 kHz

1030 kHz and 970 kHz

13 kHz and 17 kHz

14 kHz and 16 kHz

⇒

**Assertion (A):** Absolute instruments are used in standard laboratories.

**Reason (R):** Absolute instruments do not require calibration.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

A is true R is false

A is false R is true

⇒ The simplified logic expression for the circuit of the given figur

Y = A

Y = AB

Y = A + B

Y + A + B

⇒ An FM signal has modulating frequency

*f*and maximum frequency deviation of δ. The bandwidth will be nearly equal to

_{m}δ

2 δ

2

*f*δ

_{m}*f*δ

_{m}⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Detection of a periodic signal in noise | 1. | Increase in bandwidth |

B. | Recovery of a band limited signal from its uniformly sampled values | 2. | Slope overload error |

C. | Finer quantization of signal | 3. | Nyquist rate |

D. | Delta modulation | 4. | Cross correlation |

A-4, B-3, C-1, D-2

A-3, B-4, C-2, D-1

A-4, B-3, C-2, D-1

A-4, B-2, C-1, D-3

⇒ At resonance, the parallel circuit constituted by an iron-cored coil and a capacitor behaves

open circuit

short circuit

pure resistor of value R

pure resistor of value much higher than R

⇒ The electric flux and field intensity inside a conducting sphere is

minimum

maximum

uniform

zero

⇒ Floating gate is fabricated for making MOS

ROM

PROM

EPROM

EAROM

⇒ When two port networks are connected in cascade, it is more convenient to use hybrid parameters.

TRUE

FALSE

⇒ In an RC impedance function

the highest critical frequency is a pole

the highest critical frequency is a zero

the highest critical frequency is a pole or zero

the highest critical frequency is a pole at

*s*= 0

⇒ Point out the wrong statement, Sequential logic circuit is

one that requires a clock to change states

one in which past affects the present states

one whose outputs changes immediately when the inputs change

also called clock logic or synchronous logic

⇒ The electric field on the surface of a perfect conductor is 2V/m. The conductor is immersed in water with ε = 80 ε

_{0}. The surface charge density on the conductor is ((ε

_{0}= 10

^{-9}/36p)F/m)

0 c/m

^{2}

2 c/m

^{2}

1.8 x 10

^{-11}c/m

^{2}

1.14 x 10

^{-9}c/m

^{2}