Question is ⇒ Potentiometer method of dc voltage measurement is more accurate than direct measurement using a voltmeter because, Options are ⇒ (A) it loads the circuit to maximum extent, (B) it loads the circuit moderately, (C) it does not load the circuit at all, (D) it uses centre zero galvanometer instead of Voltmeters, (E) , Leave your comments or Download question paper.

Question is ⇒ Potentiometer method of dc voltage measurement is more accurate than direct measurement using a voltmeter because, Options are ⇒ (A) it loads the circuit to maximum extent, (B) it loads the circuit moderately, (C) it does not load the circuit at all, (D) it uses centre zero galvanometer instead of Voltmeters, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Potentiometer method of dc voltage measurement is more accurate than direct measurement using a voltmeter because
A.	it loads the circuit to maximum extent [Wrong Answer]
B.	it loads the circuit moderately [Wrong Answer]
C.	it does not load the circuit at all [Correct Answer]
D.	it uses centre zero galvanometer instead of Voltmeters [Wrong Answer]
View Answer 2 -4 Explanation:- Answer : C Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ Two wires A and B have the same cross-section area and are made of the same material. R_A = 600 Ω and R_B = 100 Ω. The number of times A is longer than B is
6
2
4
5

⇒ The power dissipated per gate
is constant at all frequencies
increases with frequency
decreases with frequency
may increase or decrease with frequency

⇒ The analog signal given below is sampled by 600 samples per se
600 Hz
120 Hz
300 Hz
360 Hz

⇒

Assertion (A): An inverter does not require forced commutation

Reason (R): A series inverter is a forced commutation inverter.

Both A and R are correct and R is correct explanation of A
Both A and R correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ The ratio of the diffusion coefficient in a semiconductor has the units
V^-1
em.V^-1
V.cm^-1
V.s

⇒ Square law modulators utilise
linear range of V-I characteristics of a diode
linear range of V-I characteristics of a triode
non-linear region of V-I dynamic characteristics of a diode
non-linear region of V-I dynamic characteristics of a triode

⇒ For the transmission of normal speech, the PCM channel needs a bandwidth of __________ kHz.
2
4
16
32

⇒ The use of thermocouple meters for ac measurement leads to a scale which is
linear
square law
logarithmic
exponential

⇒ The primary reason for the widespread use of Si in semiconductor device technology is
abundance of Si on the surface of earth
larger band gap of Si in comparison to Ge
favourable properties of Silicon-dioxide (SiO₂)
lower melting point

⇒ A 7477 decoder drives
seven-segment display
nickel tape
relays
diode matrix

⇒ In a platinum RTD, the change in resistance for a temperature rise of 50° C is about
0.02
0.1
0.2
0.4

⇒ For matching over a range of frequencies in a transmission line it is best to use
a balun
a broad band directional coupler
double stub
a single stub of adjustable position

⇒ If the peak transmitted power in a radar is increased by a factor 81, the maximum range is increased by a factor of
3
9
27
81

⇒

Assertion (A): The steady state response, of a stable, linear, time invariant system, to sinusoidal input depends on initial conditions.

Reason (R): Frequency response, in steady state, is obtained by replacing s in the transfer function by jω

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
R is correct but A is wrong

⇒ Burden of an instrument transformer is expressed in
A
V-A
Ω
watt

⇒ If a = 0.995, I_E = 10 mA, I_CO = 0.5 mA, then I_CEO will be
100 μA
25 μA
10.1 μA
10.5 μA

⇒ The emission of light is LED due to
emission of holes
emission of electrons
generation of electromagnetic radiations
conversion of heat energy into illumination

⇒ Leakage current approximately doubles for every 10°C increase in the temperature of a transistor has I_CBO = 400 nA at 25°C, then its leakage current at 80°C
10 μA
18 μA
20 μA
15 μA

⇒ The function f = A ⊕ B ⊕ A ⊕ D ⊕ E ⊕ C ⊕ D ⊕ E ⊕ F ⊕ G ⊕ F ⊕ G ⊕ C ⊕ E ⊕ A ⊕ D ⊕ B ⊕ E ⊕ E ⊕ B ⊕ B ⊕ B ⊕ B ⊕ D can be written as
A ⊕ B ⊕ D
A ⊕ B ⊕ E
A ⊕ E
A ⊕ E

⇒ In an FM signal, the power
increases as the modulation index increases
reduces as the modulation index increase
increases as the modulation index decreases
remains constant when the modulation index increases

⇒ If transmission path, in PCM, is very long then
repeater stations are used
pulse width may be increased
pulse amplitude is increased
pulse spacing is reduced

⇒

Assertion (A): Demodulation of SSB and AM signals is exactly similar

Reason (R): The basic SSB demodulation device is product detector.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ To obtain very high I/P and O/P impedances in a feedback amplifier, the topology used is
voltage series
current series
voltage shunt
current shunt

⇒ Digital technologies being used now-a-days are
DTL and EMOS
TTL, ECL, CMOS and RTL
TTL, ECL and CMOS
TTL, ECL. CMOS and DTL

⇒ The difference between sequential and combinational circuits is
Combinational circuits store bits
Combinational circuits have memory
Sequential circuits store bits
Sequential circuits have memory

⇒ In figure, the value of R shoul
12 Ω
6 Ω
3 Ω
1.5 Ω

⇒

Assertion (A): In an op-amp the voltage gain and band width can be adjusted as per requirement

Reason (R): Large value capacitor can also be fabricated on a chip

Both A and R are correct and R is correct explanation for A
Both A and R are correct but R is not correct explanation for A
A is correct R is wrong
A is wrong R is correct

⇒ In a CE amplifier the output coupling capacitor is short circuited. The dc collector voltage
will increase
may increase or decrease
will remain the same
will decrease

⇒ Which of these triggering methods for series connected SCRs use LASCR in the gate circuit?
Resistance triggering
Simultaneous triggering
Sequential triggering
Optical triggering

⇒ The first critical frequency nearest the origin of the complex frequency plane for an RL driving point impedance will be
a zero in left half plane
a zero in right half plane
a pole in left half plane
a pole or zero in left half plane