Question is ⇒ <p>Match the following:</p><table cellpadding="0" cellspacing="0" border="0" class="matching"><tbody><tr><th width="5%"> </th><th>List I </th> <th width="5%"></th><th>List II </th></tr><tr><td>A.</td><td>Silicon</td><td>1.</td><td>is trivalent</td></tr><tr><td>B.</td><td>Arsenic</td><td>2.</td><td>rarely used as semiconductor</td></tr><tr><td>C.</td><td>Indium</td><td>3.</td><td>is pentavalent</td></tr><tr><td>D.</td><td>Germanium</td><td>4.</td><td>intrinsic semiconductor</td></tr></tbody></table>, Options are ⇒ (A) A-1, B-2, C-3, D-4, (B) A-4, B-3, C-2, D-1, (C) A-4, B-3, C-1, D-2, (D) A-2, B-1, C-3, D-4, (E) , Leave your comments or Download question paper.

Question is ⇒ <p>Match the following:</p><table cellpadding="0" cellspacing="0" border="0" class="matching"><tbody><tr><th width="5%"> </th><th>List I </th> <th width="5%"></th><th>List II </th></tr><tr><td>A.</td><td>Silicon</td><td>1.</td><td>is trivalent</td></tr><tr><td>B.</td><td>Arsenic</td><td>2.</td><td>rarely used as semiconductor</td></tr><tr><td>C.</td><td>Indium</td><td>3.</td><td>is pentavalent</td></tr><tr><td>D.</td><td>Germanium</td><td>4.</td><td>intrinsic semiconductor</td></tr></tbody></table>, Options are ⇒ (A) A-1, B-2, C-3, D-4, (B) A-4, B-3, C-2, D-1, (C) A-4, B-3, C-1, D-2, (D) A-2, B-1, C-3, D-4, (E) , Leave your comments or Download question paper. Previous question Next question

Q1.

Match the following:

	List I		List II
A.	Silicon	1.	is trivalent
B.	Arsenic	2.	rarely used as semiconductor
C.	Indium	3.	is pentavalent
D.	Germanium	4.	intrinsic semiconductor

A-1, B-2, C-3, D-4

A-4, B-3, C-2, D-1

A-4, B-3, C-1, D-2

A-2, B-1, C-3, D-4

View Answer 1 -1

Explanation:-
Answer : C
Discuss it below :

!! OOPS Login [Click here] is required to post your answer/result
Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ The power requirements of a DRAM in active and stand by modes is about
350 mW and 5 mW respectively
350 mW each
5 mW each
350 mW and 100 mW respectively

⇒ The filter circuit for feeding tweeter has
an inductance in series and a capacitance in parallel
a capacitance in series and an inductance in parallel
a resistance in series and a capacitance in parallel
a capacitance in series and a resistance in parallel

⇒ A line has a phase constant of 29.8 rad/m. At 1000 MHz the wavelength is
29.8 m
2.98 m
2.1 m
0.21 m

⇒ In a BJT circuit a pnp transistor is replaced by npn transistor. To analyse the new circuit
all calculations done earlier have to be repeated
replace all calculated voltages by reverse values
replace all calculated currents by reverse values
replace all calculated voltages and currents by reverse values

⇒ In low pass filter of figure R₀ = 1 Ω and cut off frequency is 1 rad/sec. The values of L and C
1 H and 2 F
1 H and 1 F
2 H and 1 F
1 H and 2 F

⇒ Which of the following is not necessarily the advantages of a push pull amplifier?
It gives more output
It removes odd a well as even harmonics
There is no effect of ripple of the power supply
It consumes least power

⇒ A potential difference is developed across a current carrying metal strip when the strip is placed in a transverse magnetic field. The above effect is known as
Fermi's effect
Photo electric effect
Joule's effect
Hall's effect

⇒ Which of the following devices has the 'negative resistance' characteristic?
Reflex klystron
Gunn diode
P-N-P transistor
Magnetron

⇒ Which of the following is a circularly polarized antenna?
Rhombic
Circular loop
Helical
Yagi

⇒ In the circuit shown, in switch S is open for a long time and is closed at t = 0. The current i(t) for t ≥ 0^{+i(t) = 0.5 - 0.125e^-1000t A
i(t) = 1.5 - 0.125e^-1000t A
i(t) = 0.5 - 0.5e^-1000t A
i(t) = 0.375e^-1000t A}

⇒ A current source inverter has simple commutation circuit.
TRUE
FALSE

⇒ In a driving point function poles and zeros must be conjugate if complex or imaginary.
TRUE
FALSE

⇒ In which of the following logical group instructions of 8085 is the addressing mode 'immediate'?
ANA r
ANA M
ANI data
XRA r

⇒ Square law modulators utilise
linear range of V-I characteristics of a diode
linear range of V-I characteristics of a triode
non-linear region of V-I dynamic characteristics of a diode
non-linear region of V-I dynamic characteristics of a triode

⇒ If e = 10 sin(10⁸ t + 3 sin 10⁴ t) then modulating frequency is
159 Hz
1590 Hz
1.59 MHz
15.9 MHz

⇒ Norton's equivalent circuit
is same as Thevenin's circuit
has no relation with Thevenin's circuit
is dual of Thevenin's circuit
is reciprocal of Thevenin's circuit

⇒ Consider the equation s² + 2s + 2 + K(s + 2) = 0. Where do the roots of this equation break on the root loci plot?
-3.414
-2.414
-1.414
-0.414

⇒ In a Vidicon camera tube
grid G₁ accelerates electrons
grid G₂ accelerates electrons and grid G₃, slows down electrons
grid G₃ accelerates electrons and grid G₂ slows down electrons
both grids G₂ and G₃ accelerate electrons

⇒

Match the following:

	List I (Location of characteristics roots)		List II (System characteristic)
A.	(- 1 + j), (- 1 - j)	1.	Marginally stable
B.	(- 2 + j), (- 2 - j), (2, j) (- 2, j)	2.	Unstable
C.	- j, j - 1, 1	3.	Stable

A-1, B-2, C-3
A-2, B-3, C-1
A-3, B-1, C-2
A-1, B-3, C-2

⇒ The process of extension of a single-crystal surface by growing a film in such a way that the added atoms form a continuation of the single-crystal structure is called
Ion implantation
Chemical vapour deposition
Electroplating
Epitaxy

⇒ Which of the following is true for RC impedance?
The lowest critical frequency is a pole
The lowest critical frequency is zero
The lowest critical frequency may be pole or zero
The lowest critical frequency is a pole but cannot be at s = 0

⇒

Assertion (A): A semiconductor strain gauge is more accurate than a resistance strain gauge.

Reason (R): The gauge factor of a semiconductor strain gauge is about 100 where as the gauge factor of a resistance strain gauge is only about 2.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true

⇒

Assertion (A): ∈₀ has the dimensions of farad per meter.

Reason (R): D = ∈₀∈_r E.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true but R is false
A is false but R is true

⇒ An electron in the conduction band
has higher energy than the electron in the valence band
has lower energy than the electron in the valence band
loses its charge easily
jumps to the top of the crystal

⇒ Figure of merit is always unity in
AM
SSB-SC
FM
All

⇒ Mc Murray full bridge inverter uses
4 thyristors and 2 diodes
4 thyristors and 4 diodes
8 thyristors and 4 diodes
8 thyristors and 8 diodes

⇒ The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplifica
AB
BC
CD
BD

⇒

Assertion (A): The steady state response, of a stable, linear, time invariant system, to sinusoidal input depends on initial conditions.

Reason (R): Frequency response, in steady state, is obtained by replacing s in the transfer function by jω

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
R is correct but A is wrong

⇒ In the signal flow graph of the given figure, the number of forward path
1
2
3
4

⇒ In integral cycle control of ac regulators, the period of integral cycle control, i.e., (m + n) T should be
less than mechanical or thermal time constant of the system
more than the mechanical or thermal time constant of the system
more or less than the mechanical or thermal time constant
very high