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Assertion (A): The forward dynamic resistance of p-n diode varies inversely with current. Reason (R): The forward dynamic resistance of p-n diode varies with the operating voltage. | |
A. | Both A and R are true and R is correct explanation of A [Wrong Answer] |
B. | Both A and R are true but R is not a correct explanation of A [Correct Answer] |
C. | A is true but R is false [Wrong Answer] |
D. | A is false but R is true [Wrong Answer] |
View Answer
Explanation:-
Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
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⇒ The conductivity of an intrinsic semiconductor is
generally less than that of a doped semiconductor
given by σ_{1} = en_{i} (μ_{n} - μ_{p})
given by σ_{1} = en_{i} (μ_{p} + μ_{n})
given by σ_{1} = n_{i} (μ_{n} + μ_{p})
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⇒ The Shannon-Hartley law
refers to noise
defines bandwidth
describes signalling rate
refers to distortion
⇒ In a minimum phase system
all poles lie in the left half plane
all zeros lie in the left half plane
all poles lie in the right half plane
all except one pole or zero lie in the left half plane
⇒ State variable formulation is very suitable for computer solution.
TRUE
FALSE
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Only statement 1 is true
Only statement 2 is true
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⇒ Microprocessor 386SX is a 16/32 bit microprocessor. It has
16 bit registers and 32 bit data bus
16 bit registers and 16 bit data bus
32 bit registers and 32 bit data bus
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⇒ Programs like compilers, assemblers etc. are stored in a mircocomputer in
registers
cache memory
primary memory
mass storage
⇒ A first-order system has a time constant t. For unit ramp input, the steady state error is
t^{2}
t
t
1/t
⇒ The PC contains 0450 H and SP contains 08D 6 H. What will be content of P and SP following a CALL to subroutine at location 02 AFH?
0453 H, 08 D 8 H
0453 H, 08 D 4 H
02 AFH, 08 D 8 H
02 AFH, 08 D 4 H
⇒ A 4 : 1 multiplexer requires __________ data select line.
1
2
3
4