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Assertion (A): Power loss in a conductor of resistance P = I^{2}R. Reason (R): When a conductor is carrying current with current density J as a result of applied field E, then heat developed/m^{3}/ second = JE. | |
A. | Both A and R are true and R is correct explanation of A [Correct Answer] |
B. | Both A and R are true but R is not correct explanation of A [Wrong Answer] |
C. | A is true but R is false [Wrong Answer] |
D. | A is false but R is true [Wrong Answer] |
View Answer
Explanation:-
Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
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series tuned circuit
a parallel tuned circuit
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cavity resonator
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aS^{2}_{g} (ω) and a^{2}P_{g}
aS_{g}^{2} (ω) and aP_{g}
aS_{g} (ω) and a^{2}P_{g}
aS_{g} (ω) and aP_{g}
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input capacitor
bypass capacitor
output capacitor
biasing capacitor
⇒ Electric dipole is located at origin in a medium with ε_{r} = 6, has a moment P = (4a_{x} - 2a_{y} + a_{z} ) nC. Then potential at (2, 4, 4) is:
0.062
0.027
0.042
0.072
⇒ In a CE amplifier, the output voltage is equal to product of
ac collector current and ac collector resistance
ac base current and ac collector resistance
ac emitter current and ac emitter resistance
ac collector current and source resistance
⇒ Consider a situation where number of minterms with even number of 0's are same as number of minterms with odd number of 1's. Then minterms with even number of 0's and minterms with odd number of 1's are __________ to each other then number of variables is __________ .
equivalent, even
complement, odd
complement, even
none of these
⇒ As compared to MOS memories, bipolar memories have
slower access time but are cheaper
slower access time and are costly
faster access time and are cheaper
faster access time and are costly
⇒ In an n type semiconductor the fermi level is 0.35 eV below the conduction band, the concentration of donor atoms is increased to three times. The new position of Fermi level will be
0.35 eV below conduction band
about 0.32 eV below conduction band
about 0.32 eV above conduction band
about 0.1 eV below conduction band