Question is ⇒ Assertion (A): In an intrinsic semiconductor J = (μn x μp)eni.Reason (R): Intrinsic charge concentration ni at temperature T is given by ni2 = A0 T3 e-EG0/kT., Options are ⇒ (A) Both A and R are true and R is correct explanation of A, (B) Both A and R are true but R is not correct explanation of A, (C) A is true but R is false, (D) A is false but R is true, (E) , Leave your comments or Download question paper.

Question is ⇒ Assertion (A): In an intrinsic semiconductor J = (μn x μp)eni.Reason (R): Intrinsic charge concentration ni at temperature T is given by ni2 = A0 T3 e-EG0/kT., Options are ⇒ (A) Both A and R are true and R is correct explanation of A, (B) Both A and R are true but R is not correct explanation of A, (C) A is true but R is false, (D) A is false but R is true, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Assertion (A): In an intrinsic semiconductor J = (μ_n x μ_p)en_i. Reason (R): Intrinsic charge concentration n_i at temperature T is given by n_i² = A₀ T³ e^-E_G0/kT.
A.	Both A and R are true and R is correct explanation of A [Wrong Answer]
B.	Both A and R are true but R is not correct explanation of A [Correct Answer]
C.	A is true but R is false [Wrong Answer]
D.	A is false but R is true [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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