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Assertion (A): For same drain current rating N-channel MOSFET occupies more area than p-channel MOSFET. Reason (R): Electron mobility is much higher than hole mobility. | |
A. | Both A and R are individually true and R is the correct explanation of A [Wrong Answer] |
B. | Both A and R are individually true but R is not the correct explanation of A [Wrong Answer] |
C. | A is true but R is false [Wrong Answer] |
D. | A is false but R is true [Correct Answer] |
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Explanation:-
Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ A system has 12 poles and 2 zeros. Its high frequency asymptote in its magnitude plot has a slope of
-200 dB/decade
-240 dB/decade
-280 dB/decade
-320 dB/decade
⇒ In a R-L-C circuit at resonance is
maximum in series resonance and minimum in parallel resonance.
maximum in parallel resonance and minimum in series resonance
minimum in both series and parallel resonances
maximum in both series and parallel resonances.
⇒
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true
⇒ A divide by 78 counter can be obtained by
6 numbers of mod-13 counters
13 numbers of mod-6 counters
one mod-13 counter followed by mod-6 counter
13 number of mod-13 counters
⇒
Both A and R are individually true and R is the correct explanation of A
Both A and R are individually true but R is not the correct explanation of A
A is true but R is false
A is false but R is true
⇒ The following table gives some time functions and the Laplace transf
2 and 4
1 and 4
3 and 4
1 and 2
⇒ Which of the following is equivalent to AND-OR realization?
NAND-NOR
NOR-NOR
NOR-NAND
NAND-NAND
⇒ Permeability is analogous to
resistivity
retentivity
conductivity
coercivity
⇒ If the connection of two-port is such that the transmission matrix of the overall network is the product of the transmission matrices of the individual networks, what type of connection is it?
Series connection
Cascade connection
Parallel connection
None of the above
⇒ The electrochemical equivalent of a material
depends on its valency
depends on its atomic weight
depends on its valency and atomic weight
depends on the degree of hardness of the material
⇒ Which of following is recursive system?
y(n - 1)
y(n + 1)
y(n)
y(n) + y(n + 1)
⇒ Two network said to be dual to each other
if mesh equation of one is same to other of node equation
if mesh equation of both is same
if node equation of both is same
neither mesh equation nor node equation is same
⇒ If the p and T circuits in figure are equivalent, then R_{1}, R_{2}, R_{3} respectively
9 Ω, 6 Ω, 6 Ω
6 Ω, 6 Ω, 9 Ω
9 Ω, 6 Ω, 9 Ω
6 Ω, 9 Ω, 6 Ω
⇒ The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
1.5 V
2.5 V
3.5 V
4.5 V
⇒
A-1, B-2, C-3, D-4
A-1, B-4, C-3, D-2
A-3, B-2, C-1, D-4
A-3, B-4, C-1, D-2
⇒ If zeros at infinity are included in the count, the number of zeros of G(s) H(s) is
equal to number of poles
one more than the number of poles
one less than the number of poles
none of the above
⇒ 10's complement of 16_{10} is
83_{10}
84_{10}
38_{10}
48_{10}
⇒ The values of 2^{5} in octal system is
40
20
400
200
⇒
A-1, B-2, C-3, D-4
A-3, B-1, C-2, D-4
A-2, B-3, C-4, D-1
A-4, B-1, C-2, D-3
⇒ A capacitor stores 0.15C at 5 V. Its capacitance is
0.75 F
0.75 μF
0.03 F
0.03 μF
⇒ In the given figure, of potentiometer V_{0} = V_{i} (R_{0}/R_{i}) only
R_{L} = 0
R_{L} = ∞
R_{L} is neither low nor high
R_{L} is low but not zero
⇒ Loading effect is primarily caused by instruments having
high resistance
high sensitivity
low sensitivity
high range
⇒ In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
Half wave rectifier
Full wave rectifier
Bridge type full wave rectifier
Three phase full wave rectifier
⇒ For the differential equation (D^{3} - D^{2} + D -1) [y(t)] = 0 the root of auxiliary equation
-j, j, 1
-j, j, 2
1, 2, j
1, 2, -j
⇒
A-1, B-2, C-4, D-3
A-4, B-1, C-2, D-3
A-4, B-3, C-1, D-2
A-2, B-1, C-3, D-4
⇒ In a three phase series inverter, the firing frequency is
three times output frequency
six times output frequency
twice the output frequency
equal to output frequency
⇒
I only
II only
III only
all of the above
⇒ A transistor with a = 0.98 then β will be
49
50
47
48
⇒ The number of valence electrons in a donor atom is
2
3
4
5
⇒ Turn off time of a transistor switch is equal to (where t_{s} is storage time and t_{f} is fall time.)
t_{s} + t_{f}
t_{s} - t_{f}
2t_{s}
2t_{f}
⇒ A system has 12 poles and 2 zeros. Its high frequency asymptote in its magnitude plot has a slope of
-200 dB/decade
-240 dB/decade
-280 dB/decade
-320 dB/decade
⇒ In a R-L-C circuit at resonance is
maximum in series resonance and minimum in parallel resonance.
maximum in parallel resonance and minimum in series resonance
minimum in both series and parallel resonances
maximum in both series and parallel resonances.
⇒
Assertion (A): Thermistors are commonly used to measure hot spot temperatures in electric machines.
Reason (R): Thermistor has the advantages of high temperature coefficient, small size and high speed of response.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true
⇒ A divide by 78 counter can be obtained by
6 numbers of mod-13 counters
13 numbers of mod-6 counters
one mod-13 counter followed by mod-6 counter
13 number of mod-13 counters
⇒
Assertion (A): The h-parameter model of a BJT can be derived from its hybrid-p model and vice-versa.
Reason (R): The hybrid-p model has many more additional elements as compared to h-parameter model of the BJT.
Both A and R are individually true and R is the correct explanation of A
Both A and R are individually true but R is not the correct explanation of A
A is true but R is false
A is false but R is true
⇒ The following table gives some time functions and the Laplace transf
2 and 4
1 and 4
3 and 4
1 and 2
⇒ Which of the following is equivalent to AND-OR realization?
NAND-NOR
NOR-NOR
NOR-NAND
NAND-NAND
⇒ Permeability is analogous to
resistivity
retentivity
conductivity
coercivity
⇒ If the connection of two-port is such that the transmission matrix of the overall network is the product of the transmission matrices of the individual networks, what type of connection is it?
Series connection
Cascade connection
Parallel connection
None of the above
⇒ The electrochemical equivalent of a material
depends on its valency
depends on its atomic weight
depends on its valency and atomic weight
depends on the degree of hardness of the material
⇒ Which of following is recursive system?
y(n - 1)
y(n + 1)
y(n)
y(n) + y(n + 1)
⇒ Two network said to be dual to each other
if mesh equation of one is same to other of node equation
if mesh equation of both is same
if node equation of both is same
neither mesh equation nor node equation is same
⇒ If the p and T circuits in figure are equivalent, then R_{1}, R_{2}, R_{3} respectively
9 Ω, 6 Ω, 6 Ω
6 Ω, 6 Ω, 9 Ω
9 Ω, 6 Ω, 9 Ω
6 Ω, 9 Ω, 6 Ω
⇒ The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
1.5 V
2.5 V
3.5 V
4.5 V
⇒
Match the following:
List I | List II | ||
---|---|---|---|
A. | R = 0 | 1. | Undamped oscillation |
B. | R < 2 L/C | 2. | Damped oscillation |
C. | R = 2 L/C | 3. | Critically damped response |
D. | R > 2 L/C | 4. | Non-oscillatory response. |
A-1, B-2, C-3, D-4
A-1, B-4, C-3, D-2
A-3, B-2, C-1, D-4
A-3, B-4, C-1, D-2
⇒ If zeros at infinity are included in the count, the number of zeros of G(s) H(s) is
equal to number of poles
one more than the number of poles
one less than the number of poles
none of the above
⇒ 10's complement of 16_{10} is
83_{10}
84_{10}
38_{10}
48_{10}
⇒ The values of 2^{5} in octal system is
40
20
400
200
⇒
Match the following:
List I (BHE, A0) | List II (Word is read/write) | ||
---|---|---|---|
A. | 0, 0 | 1. | 1 byte from/to odd address |
B. | 0, 1 | 2. | 1 byte from/to even address |
C. | 1, 0 | 3. | 16 bit word |
D. | 1, 1 | 4. | None |
A-1, B-2, C-3, D-4
A-3, B-1, C-2, D-4
A-2, B-3, C-4, D-1
A-4, B-1, C-2, D-3
⇒ A capacitor stores 0.15C at 5 V. Its capacitance is
0.75 F
0.75 μF
0.03 F
0.03 μF
⇒ In the given figure, of potentiometer V_{0} = V_{i} (R_{0}/R_{i}) only
R_{L} = 0
R_{L} = ∞
R_{L} is neither low nor high
R_{L} is low but not zero
⇒ Loading effect is primarily caused by instruments having
high resistance
high sensitivity
low sensitivity
high range
⇒ In which of the following case the rating of the transformer to deliver 100 watts of d.c. power to a load, will be least?
Half wave rectifier
Full wave rectifier
Bridge type full wave rectifier
Three phase full wave rectifier
⇒ For the differential equation (D^{3} - D^{2} + D -1) [y(t)] = 0 the root of auxiliary equation
-j, j, 1
-j, j, 2
1, 2, j
1, 2, -j
⇒
Match the following:
List I | List II | ||
---|---|---|---|
A. | Copper | 1. | produces discrete energy level just above valence band |
B. | Rubber | 2. | produces discrete energy level just below conduction band |
C. | Antimony | 3. | large forbidden gap |
D. | Boron | 4. | valence and conduction bands overlap |
A-1, B-2, C-4, D-3
A-4, B-1, C-2, D-3
A-4, B-3, C-1, D-2
A-2, B-1, C-3, D-4
⇒ In a three phase series inverter, the firing frequency is
three times output frequency
six times output frequency
twice the output frequency
equal to output frequency
⇒
- Hall coefficient R_{H} is directly proportional to the charge density
- R_{H} depends upon type of the semiconductor material (n - type or p - type)
- Hall co-efficient R_{H} is directly proportional to hall voltage V_{H}
I only
II only
III only
all of the above
⇒ A transistor with a = 0.98 then β will be
49
50
47
48
⇒ The number of valence electrons in a donor atom is
2
3
4
5
⇒ Turn off time of a transistor switch is equal to (where t_{s} is storage time and t_{f} is fall time.)
t_{s} + t_{f}
t_{s} - t_{f}
2t_{s}
2t_{f}