Question is ⇒ Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20., Options are ⇒ (A) Both A and R are true and R is correct explanation of A, (B) Both A and R are true but R is not correct explanation of A, (C) A is true but R is false, (D) A is false but R is true, (E) , Leave your comments or Download question paper.

Question is ⇒ Assertion (A): Doping level in extrinsic semiconductors is very small.Reason (R): Additional of impurity in the ratio of 1 part in 108 parts increases the number of charge carriers by about 20., Options are ⇒ (A) Both A and R are true and R is correct explanation of A, (B) Both A and R are true but R is not correct explanation of A, (C) A is true but R is false, (D) A is false but R is true, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Assertion (A): Doping level in extrinsic semiconductors is very small. Reason (R): Additional of impurity in the ratio of 1 part in 10⁸ parts increases the number of charge carriers by about 20.
A.	Both A and R are true and R is correct explanation of A [Correct Answer]
B.	Both A and R are true but R is not correct explanation of A [Wrong Answer]
C.	A is true but R is false [Wrong Answer]
D.	A is false but R is true [Wrong Answer]
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