Question is ⇒ Parallel wire transmission line is an example of, Options are ⇒ (A) lumped network, (B) distributed, (C) depend upon I/P signal strength, (D) power I/P, (E) , Leave your comments or Download question paper.

Question is ⇒ Parallel wire transmission line is an example of, Options are ⇒ (A) lumped network, (B) distributed, (C) depend upon I/P signal strength, (D) power I/P, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Parallel wire transmission line is an example of
A.	lumped network [Wrong Answer]
B.	distributed [Correct Answer]
C.	depend upon I/P signal strength [Wrong Answer]
D.	power I/P [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ The stack is a specialized temporary __________ access memory during __________ and __________ instructi
random, store, load
random, push, load
sequential, store, pop
sequential, push, pop

⇒ The radiation resistance of a resonant long wire antenna of half wavelength (λ/2) is given
73 Ω
120 p
377 Ω
7.3 Ω

⇒ In a transmission line, losses due to dielectric heating are
proportional to voltage and inversely proportional to Z₀
proportional to voltage and proportional to Z₀
proportional to current and proportional to Z₀
proportional to current and inversely proportional to Z₀

⇒ Which interrupts are masked?
5.5
6.5
7.5
None

⇒ The noise generated by a resistor depends upon
its operating temperature
its resistance value
both (a) and (b)
bandwidth

⇒ Consider the following statements

An iron cored choke is non linear and passive device.
A carbon resistor kept in sunlight is a time invariant and passive device.
A dry cell is a time varying and active device.
An air capacitor is time invariant and passive device.

Of these statements
1, 2, 3 and 4 are correct
1, 2, 3 are correct
1, 2, 4 are correct
2 and 4 are correct

⇒ Consider the following functions

It detects the AM video carrier IF so as to produce the video signal
It produces and separates out the inter carrier sound IF of 5.5 MHz
It amplifies the video signal
It amplifies the audio signal

The video detector in a colour TV performs which of the above functions
1, 2 and 3
1, 2, 3 and 4
1 and 2
1, 2 and 4

⇒ A feedback network to be used with an amplifier to provide oscillation is tested and found to give an output of 0.124 V with a 0.5 V input. What percentage negative feedback should be introduced to the amplifier so that linear oscillations result?
0.0125
0.025
-0.0125
-0.025

⇒ In 8085, Whenever a signal is received at TRAP terminal its program execution is transferred to a subroutine on address __________ .
0000 H
0024 H
002 CH
provided by the address generation logic

⇒ In auxiliary commutated chopper, the peak value of thyristor current is
equal to peak value of load current
equal to peak value of capacitor current
sum of peak value of load current and capacitor current
none of the above

⇒ Find the Fourier transform of the half cosine pulse as shown bel
0.5 {sin c [0.25(f - 1)] + sin c [2.5(f + 1)]}
0.5 {sin c [0.5(f - 1)] + sin c [0.5(f + 1)]}
0.25 {sin c [0.25(f - 1)] + sin c [0.25 (f - 1)]}
0.25 {sin c [0.5(f - 1)] + sin c [0.5(f - 1)]}

⇒ In low power factor wattmeter, the compensating coil is connected
in series with current coil
in parallel with current coil
in series with pressure coil
in parallel with pressure coil

⇒ Which of the following is correct?
Speed torque characteristics of permanent magnet dc servomotor is more flat than that of wound field dc servomotor
Speed torque characteristics of wound field dc servo- motor is more flat than that of permanent magnet dc servo motor
Speed torque characteristics of wound field and permanent magnet dc servomotor are equally flat
None of the above

⇒ State variable formulation is very suitable for computer solution.
TRUE
FALSE

⇒ Why npn-transistors are preferred over pnp-transistors?
Leakage current in npn-transistors is less than pnp-transistors
Mobility of majority carrier in npra-transistors is greater than the mobility of majority carrier in pnp-transistors
Bias voltage required in npn is less than in/wp-transistors
Bias voltage required in npn is greater than in pnp-transistors

⇒ D/A converters are generally
weighted resistor network
binary ladder network
either (a) or (b)
neither (a) nor (b)

⇒ Magnetic hysteresis phenomenon is explained by
motion of domain walls
motion of domain walls and domain rotation
domain rotation
none of the above

⇒ Maxwell's divergence equation for the magnetic field is given as
∇ . B = 0
∇² . B = 0
∇ . B = constant
∇² . B = constant

⇒ A FET has
very high input resistance
very low input resistance
high connection emitter junction
forward biased PN junction

⇒ A square corner reflector is used in
radio astronomy
tv broadcast
point to point communication
all of the above

⇒ The function in the given figure can be writte
u(t - 1) sin p ( t - 1) - u(t - 3) sin p (t - 3) + u(t - 4) sin p (t - 4) - u(t - 6) sin p (t - 6)
u(t - 1) sin p ( t - 1) - u(t - 3) sin p (t - 3) + u(t - 4) sin p (t - 4)
u(t - 1) sin p ( t - 1) + u(t - 4) sin p (t - 4)
u(t - 1) sin 2p ( t - 1) + u(t - 4) sin 2p (t - 4)

⇒ A square corner reflector is used in which of the following?
TV broadcast
Point-to-point communication
Radio astronomy
All of the above

⇒ A point charge of 6 μC is located at the origin, uniform line charge density of 180 nC/m of 8 m length lies along the x axis and a uniform sheet of charge equal to 25 nC/m² of area p x 4² lies in the z = 0 plane. Calculate total electric flux leaving the surface of sphere of 4 m radius centered at origin.
86.97 μC
8.697 nC
8.697 μC
86.97 nC

⇒ Thermistor is used in
temperature measurement
temperature control
high temperature alarm circuits of devices
all of the above

⇒ The inverse of given Laplace transfor
sin t
cos t
e^t
e^2t

⇒ When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.
TRUE
FALSE

⇒ Oscillator with best frequency stability is
Crystal oscillator
Phase shift oscillator
Clapp oscillator
Hartley oscillator

⇒ The number of pins in microprocessor 8086 is
30
40
50
60

⇒ In a Gunn diode oscillator drift velocity of electron is 10⁷ cm/s and active region length is 10 x 10^-4 cm. The natural frequency of oscillation is
1 MHz
10 MHz
1 GHz
10 GHz

⇒ A germanium diode has a reverse saturation current of 30 μA at 125°C and forward current of 1 mA at a forward potential of 0.8 V and the reverse potential is 0.6 V What are its dynamic forward and reverse resistance at this temperature.
10.7 Ω, 70 kΩ
34 Ω, 20 kΩ
80 Ω, 20 kΩ
800 Ω, 40 kΩ