Users Also Read
MCQ's Search Engine
Electrical Engineering
Mechanical Engineering
Civil Engineering
Automobile Engineering
Chemical Engineering
Computer Engineering
Electronics Engineering
Medical Science Engg
Measurement of non-electrical quantity involves the following subsystems
| |
A. | 4, 1, 3, 2 [Correct Answer] |
B. | 4, 3, 1, 2 [Wrong Answer] |
C. | 1, 3, 2, 4 [Wrong Answer] |
D. | 1, 2, 3, 4 [Wrong Answer] |
View Answer
Explanation:-
Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ When a material becomes a superconductor, its resistivity becomes
very small
zero
about 10% of normal value
about 20% of normal value
⇒ In Von-Neumann-or Princeton-type computers, the program
can appear any where within the memory
memory and data memory are clearly distinguished
data and instructions are distinguished at the first stage
none of the above
⇒ As the temperature increases the mobility of electrons __________ .
decreases because the number of carries increases with increased collisions
increases because the number of carries decreases with decreased collisions
remains same
none of the above
⇒ A signal f(t) = cos 10pt + 3 cos 4pt is instantaneously sampled. The maximum allowable value of sampling interval T_{s} in sec is
1 / 4 sec
1 / 8 sec
1 / 8p sec
1 / 10 sec
⇒ A square corner reflector is used in which of the following?
TV broadcast
Point-to-point communication
Radio astronomy
All of the above
⇒ The equivalent circuit of an op-amp has
a virtual ground at input
a virtual ground at output
virtual ground at input as well as at output
none of the above
⇒ A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
is independent of current oxide thickness and temperature
is independent of current oxide thickness but depends on temperature
slows down as the oxide grows
is zero as the existing oxide prevents further oxidation
⇒ If V = 100 ∠ 16°, the (V) is
10 ∠ 32°
10 ∠ 8°
10 ∠ 16°
10 ∠ 4°
⇒ The current through a PN Junction diode with v volts applied to the P region to the N region, where (I_{0} is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is
I_{0} (e^{-qv/mkT} - 1)
I_{0} e^{-qv/mkT}
I_{0} (1 - e^{qv/mkT})
I_{0} (e^{qv/mkT} - 1)
⇒ Consider the following expression for the driving point imped
2 and 4
1 and 3
1 and 4
2 and 3
⇒ Multiphase choppers are used in
low power circuits
high power circuit
both low and high power circuits
medium power circuits
⇒ A phase shifting transformer is used in conjunction with
DC slide wire potentiometer
Crompton potentiometer
AC coordinate potentiometer
Drysdale potentiometer
⇒ Convolution of x(t + 5) with impulse function δ(t - 7) is equal to
x(t - 2)
x(t + 12)
x(t - 12)
(t + 2)
⇒ In TE_{10 }mode the largest electric field in a rectangular wave guide, occurs
along centre line of broad wall (i.e. x = a/2)
along the broad wall (i.e. x = 0 and x = a)
either (a) or (b)
neither (a) nor (b)
⇒ Some possible functions of AGC in a TV receiver are
1, 2, 3, 4
1, 2, 4
1, 2, 3
2, 3, 4
⇒ For insulators the energy gap is of the order of
0.1 eV
0.7 eV
1.1 eV to 1.2 eV
5 to 15 eV
⇒ The ratio of the diffusion coefficient in a semiconductor has the units
V^{-1}
em.V^{-1}
V.cm^{-1}
V.s
⇒ The Table given below is the mark obtained by 2 students in 8 different subjec
-0.4748
0.4748
-0.0338
0.0338
⇒ The slope of log-magnitude asymptote changes by - 40 dB/ decade at a frequency ω_{1}. This means that
a double pole is present
a pair of complex conjugate poles is present
either a double pole or a pair of complex conjugate poles is present
a pole or zero at origin is present
⇒ Oscillator crystal is made of
silicon
germanium
diamond
quartz
⇒ In an op-amp a common mode signal is applied to
inverting terminal
non-inverting terminal
both terminals
one or both the terminals
⇒ Symbol shown in figure represen
P-channel DEMOSFET
N-channel DEMOSFET
UJT with N-type base
UJT with P-type base
⇒ In a loss-less transmission line
R << ω L; G << ω C
R = ω L, G = ω C
R >> ω L; G >> ω C
none of the above
⇒ The current i(t) through a 10 Ω resistor in series with an inductance is given by i(t) = 3 + 4 sin (100t + 45°) + 4 sin (300t + 60°) Amperes. The RMS value of the current and the power dissipated in the circuit are
41 A, 410 W respectively
35 A, 350 W respectively
5 A, 250 W respectively
11 A, 1210 W respectively
⇒ The probability of recombination of electrons and holes in a semiconductor is proportional to
density of electrons
density of holes
density of electrons and holes
none of the above
⇒ In which frequency range is the noise figure in a transistor independent of frequency
intermediate frequencies
high frequency
low frequencies
both low and high frequencies
⇒ In a differential amplifier, CMRR can be improved by using an increased
emitter resistance
collector resistance
power supply voltages
source resistance
⇒ In a cellular communication system, path loss between transmitter and receiver is due to
scattering from building, trees, vehicles and other structure
reason at (a) above and due to reflections from ground only
reason at (a) and (b) above along with reflections from ionosphere only
reasons at (a), (b) and (c) above along with loss due to surface wave phenomenon
⇒
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true
⇒ A + (B . C) =
A . B + C
A . B + A . C
A
(A + B) . (A + C)
⇒ When a material becomes a superconductor, its resistivity becomes
very small
zero
about 10% of normal value
about 20% of normal value
⇒ In Von-Neumann-or Princeton-type computers, the program
can appear any where within the memory
memory and data memory are clearly distinguished
data and instructions are distinguished at the first stage
none of the above
⇒ As the temperature increases the mobility of electrons __________ .
decreases because the number of carries increases with increased collisions
increases because the number of carries decreases with decreased collisions
remains same
none of the above
⇒ A signal f(t) = cos 10pt + 3 cos 4pt is instantaneously sampled. The maximum allowable value of sampling interval T_{s} in sec is
1 / 4 sec
1 / 8 sec
1 / 8p sec
1 / 10 sec
⇒ A square corner reflector is used in which of the following?
TV broadcast
Point-to-point communication
Radio astronomy
All of the above
⇒ The equivalent circuit of an op-amp has
a virtual ground at input
a virtual ground at output
virtual ground at input as well as at output
none of the above
⇒ A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
is independent of current oxide thickness and temperature
is independent of current oxide thickness but depends on temperature
slows down as the oxide grows
is zero as the existing oxide prevents further oxidation
⇒ If V = 100 ∠ 16°, the (V) is
10 ∠ 32°
10 ∠ 8°
10 ∠ 16°
10 ∠ 4°
⇒ The current through a PN Junction diode with v volts applied to the P region to the N region, where (I_{0} is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is
I_{0} (e^{-qv/mkT} - 1)
I_{0} e^{-qv/mkT}
I_{0} (1 - e^{qv/mkT})
I_{0} (e^{qv/mkT} - 1)
⇒ Consider the following expression for the driving point imped
2 and 4
1 and 3
1 and 4
2 and 3
⇒ Multiphase choppers are used in
low power circuits
high power circuit
both low and high power circuits
medium power circuits
⇒ A phase shifting transformer is used in conjunction with
DC slide wire potentiometer
Crompton potentiometer
AC coordinate potentiometer
Drysdale potentiometer
⇒ Convolution of x(t + 5) with impulse function δ(t - 7) is equal to
x(t - 2)
x(t + 12)
x(t - 12)
(t + 2)
⇒ In TE_{10 }mode the largest electric field in a rectangular wave guide, occurs
along centre line of broad wall (i.e. x = a/2)
along the broad wall (i.e. x = 0 and x = a)
either (a) or (b)
neither (a) nor (b)
⇒ Some possible functions of AGC in a TV receiver are
- To increase gain for weak signals
- To decrease gain for strong signals
- To change the contrast when we switch from one channel to other
- To reduce flutter
1, 2, 3, 4
1, 2, 4
1, 2, 3
2, 3, 4
⇒ For insulators the energy gap is of the order of
0.1 eV
0.7 eV
1.1 eV to 1.2 eV
5 to 15 eV
⇒ The ratio of the diffusion coefficient in a semiconductor has the units
V^{-1}
em.V^{-1}
V.cm^{-1}
V.s
⇒ The Table given below is the mark obtained by 2 students in 8 different subjec
-0.4748
0.4748
-0.0338
0.0338
⇒ The slope of log-magnitude asymptote changes by - 40 dB/ decade at a frequency ω_{1}. This means that
a double pole is present
a pair of complex conjugate poles is present
either a double pole or a pair of complex conjugate poles is present
a pole or zero at origin is present
⇒ Oscillator crystal is made of
silicon
germanium
diamond
quartz
⇒ In an op-amp a common mode signal is applied to
inverting terminal
non-inverting terminal
both terminals
one or both the terminals
⇒ Symbol shown in figure represen
P-channel DEMOSFET
N-channel DEMOSFET
UJT with N-type base
UJT with P-type base
⇒ In a loss-less transmission line
R << ω L; G << ω C
R = ω L, G = ω C
R >> ω L; G >> ω C
none of the above
⇒ The current i(t) through a 10 Ω resistor in series with an inductance is given by i(t) = 3 + 4 sin (100t + 45°) + 4 sin (300t + 60°) Amperes. The RMS value of the current and the power dissipated in the circuit are
41 A, 410 W respectively
35 A, 350 W respectively
5 A, 250 W respectively
11 A, 1210 W respectively
⇒ The probability of recombination of electrons and holes in a semiconductor is proportional to
density of electrons
density of holes
density of electrons and holes
none of the above
⇒ In which frequency range is the noise figure in a transistor independent of frequency
intermediate frequencies
high frequency
low frequencies
both low and high frequencies
⇒ In a differential amplifier, CMRR can be improved by using an increased
emitter resistance
collector resistance
power supply voltages
source resistance
⇒ In a cellular communication system, path loss between transmitter and receiver is due to
scattering from building, trees, vehicles and other structure
reason at (a) above and due to reflections from ground only
reason at (a) and (b) above along with reflections from ionosphere only
reasons at (a), (b) and (c) above along with loss due to surface wave phenomenon
⇒
Assertion (A): The gall tinsley potentiometer is a coordinate potentiometer and has two exactly similar potentiometers.
Reason (R): An ac potentiometer may measure the unknown voltage in polar form or rectangular coordinate form.
Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true
⇒ A + (B . C) =
A . B + C
A . B + A . C
A
(A + B) . (A + C)