Users Also Read

MCQ's Search Engine

Electrical Engineering

Mechanical Engineering

Civil Engineering

Automobile Engineering

Chemical Engineering

Computer Engineering

Electronics Engineering

Medical Science Engg

*t*), (C) 0', (D) infinite, (E) , Leave your comments or Download question paper. '/> t), (B) δ(

*t*), (C) 0', (D) infinite, (E) , Leave your comments or Download question paper. '/>Previous questionNext question

Q1. | Inverse Fourier transform of '1' is |

A. | U(t) [Wrong Answer] |

B. | δ(t) [Correct Answer] |

C. | 0' [Wrong Answer] |

D. | infinite [Wrong Answer] |

View Answer
Explanation:-
Answer : BDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ If

*e*= 110 sin (ω

*t*+ p/3) and

*i*= 5 sin (ω

*t*- p/3), the impedance of the circuit is

22 Ω

16 Ω

30.8 Ω

11 Ω

⇒ The storage capacity of DSDD disk and DSHD disk are

1.2 MB each

360 KB each

1.2 MB and 360 KB respectively

360 KB and 1.2 MB respectively

⇒ The direction in a Yagi Uda antenna is longer than the radiating element.

TRUE

FALSE

⇒ A junction FET, can be used as a voltage variable resistor

at pinch-off condition

beyond pinch-off voltage

well below pinch-off condition

for any value of V

_{DS}

⇒ For F

_{2}layer the critical frequency is about

500 MHz

100 MHz

25 MHz

10 MHz

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Total instantaneous value of emitter current | 1. | I_{E} |

B. | Quiescent value of emitter current | 2. | i_{E} |

C. | Instantaneous value of as component of emitter current | 3. | I_{e} |

D. | RMS value of ac component of emitter current | 4. | i_{e} |

A-1, B-2, C-4, D-3

A-2, B-1, C-4, D-3

A-2, B-1, C-3, D-4

A-2, B-3, C-4, D-1

⇒ Given figure shows a 90° sector of spherical reflector with vertex 'V', centre of curvature 'C' and equal distances VD, DF, FE and EC. When a beam of EM wave is incident parallel to the axis, all the energy will pass through the reg

VD

DF

EF

EC

⇒ A conditionally stable system is stable for the value of gain between two critical values. It is unstable if

the gain is increased beyond upper critical value

the gain is decreased below lower critical value

both (a) and (b)

none of the above

⇒ If modulus is less than 2

^{N}, some states of the counter are skipped by using NAND gates.

TRUE

FALSE

⇒ Radiation intensity does not depend upon

the antenna direction

antenna width

both (a) and (b)

none of the above

⇒ For the circuit shown in the figure, the current

indeterminate due to indeterminate data

zero

4 Amp

8 Amp

⇒ The angular location of poles depends on

undamped natural frequency

damping ratio

both (a) and (b)

neither (a) nor (b)

⇒ In a series circuit with X

_{L}constant and R variable the current locus lies in the third quadrant.

TRUE

FALSE

⇒ The function shown in figure, can represent a probability density function for A ________

*A*= 1/4

*A*= 1/6

*A*= 1/8

*A*= 1/2

⇒ Common base configuration is little used because

it has low input impedance

it has high input impedance

it does not heat up

it has very high gain

⇒ A cycloconverter is

ac-dc converter

dc-ac converter

dc-dc converter

ac-ac converter

⇒ What is the frequency of audio modulation?

1000 Hz

2000 Hz

3000 Hz

2000 kHz

⇒ When an atom of polarizability a is placed in an electric field E, the energy stored in atom is 0.5 a E

^{2}.

TRUE

FALSE

⇒ A two branch parallel circuit has a 10 Ω resistance and 0.5 H inductance in one branch and a 100 μF capacitor in the second branch. It is fed from 100 V ac supply. At resonance, the source current is

0.416666666666667

0.0416666666666667

0.2 A

0.05 A

⇒

**Assertion (A):** Magnetic susceptibility of diamagnetic materials is much less than that of paramagnetic materials.

**Reason (R):** For diamagnetic as well as paramagnetic materials, μ_{r} is nearly equal to 1.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

A is true but R is false

A is false but R is true

⇒ In a pure sample of silicon

the number of holes and free electrons is always equal

the number of free electrons is more than the number of holes

the number of free electrons and holes is equal at low temperature

the number of free electrons is less than number of holes

⇒ The transfer function of a discrete time LTI system is give

Both S1 and S2 are true

Both S2 and S3 are true

Both S1 and S3 are true

S1, S2 and S3 are all true

⇒ Simplify : A + B + A B + (A + B)AB + C(B + AB)

B + A

*C*

C

1

⇒ The measurement of Hall coefficient of a semiconductor with one type of charge carriers gives the information about

sign of charge carrier

density of charge carrier

both sign and density of charge carrier

none of the above

⇒ The network of the given figure

lag network

lead network

lag-lead network

any of the above

⇒ A power supply has full-load voltage of 20 V. What will be its no load voltage when its voltage regulation is 100%

0 V

10 V

20 V

40 V

⇒ In a metal the probability of a state 0.1 eV below Fermi level being occupied

is more than the probability of state 0.1 eV above Fermi level being occupied

is the same as the probability of state 0.1 eV above Fermi level being occupied

is less than the probability of state 0.1 eV above Fermi level being occupied

may be equal to or more or less than the probability of state 0.1 eV above Fermi level being occupied

⇒ In rectangular waveguides the ratio of width to height is about

0.5

1

2

4

⇒ In tape recorder erase head is active during recording.

TRUE

FALSE

⇒

**Assertion (A):** A universal RLC bridge has a battery and also a high frequency ac source.

**Reason (R):** RLC bridge uses a Wienbridge arrangement for measuring capacitance.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not correct explanation of A

A is true R is false

A is false R is true