Question is ⇒ Incompatibility between memory and I/O device may be due to, Options are ⇒ (A) timing according to which data transfer is to take place, (B) electrical characteristics of the two devices, (C) format of data transfer, (D) all of the above, (E) , Leave your comments or Download question paper.

Question is ⇒ Incompatibility between memory and I/O device may be due to, Options are ⇒ (A) timing according to which data transfer is to take place, (B) electrical characteristics of the two devices, (C) format of data transfer, (D) all of the above, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	Incompatibility between memory and I/O device may be due to
A.	timing according to which data transfer is to take place [Wrong Answer]
B.	electrical characteristics of the two devices [Wrong Answer]
C.	format of data transfer [Wrong Answer]
D.	all of the above [Correct Answer]
View Answer 1 -1 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ One commercial unit of energy is equal to
1 watt-sec
1 kilowatt-sec
1 kilowatt-hour
One watt-hour

⇒ A square in which each (i, j)^th element of matrix is equal to the negative of the conjugate complex of (j, i)^th element, is called
Hermitian matrix
Skew symmetric matrix
Conjugate anti-symmetric matrix
Skew-Hermitian matrix

⇒ In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, V_D is found to be 700 mV. If the temperature rises to 40°C, V_D becomes approximately equa
747 mV
660 mV
680 mV
700 mV

⇒ In a single sideband suppressed carrier AM system, the modulation index is changed from 0 to 1, the power content of the signal
will be quarter
will be doubled
will increase by 50 percent
will increase by 25 percent

⇒ In a forward biased p-n junction current enters p material as hole current and leaves n material as electron current of the same magnitude.
TRUE
FALSE

⇒ In register index addressing mode the effective address is given by
index register value
sum of the index register value and the operand
operand
difference of the index register value and the operand

⇒ By connecting external resistances to a differential amplifier we can adjust
voltage gain
bandwidth
both voltage gain and bandwidth
none of the above

⇒ Which of the following compensation method in amplifier can be used to reduce the bandwidth?
Pole-zero compensation
Dominant pole compensation
Lead compensation
Any of the above

⇒ The number of lobes on each side of a 31 resonant antenna will be
2
3
4
6

⇒ An electron when placed midway between two equal and opposite charges will
remain stationary
oscillate between the charges
be thrown out of the field
spin in the field

⇒ Consider the following statements : A clamper circuit

adds or subtracts a dc voltage to a waveform
does not change the waveform
amplifiers the waveform

Which are correct?
1, 2
1, 3
1, 2, 3
2, 3

⇒ In a broadcast superheterodynes receiver having no RF amplifier, the loaded Q of the antenna coupling circuit is 100. If the intermediate frequency is 455 kHz. The image frequency at 1000 kHz will be
1010 kHz
1455 kHz
1910 kHz
545 kHz

⇒ Alternating current can induce voltage because it has magnetic field which is
constant
time varying
stronger field than D.C.
closed loop nature.

⇒ The temperature coefficient of a thermistor
is positive
is negative
zero
may be positive or negative depending on its composition

⇒

Assertion (A): A class C amplifier can also be used as frequency multiplier

Reason (R): When narrow current pulses drive a resonant circuit the output can be a near perfect sine wave

Both A and R are correct and R is correct explanation for A
Both A and R are correct but R is not correct explanation for A
A is correct R is wrong
A is wrong R is correct

⇒ Aperture circuit produces __________ in sample hold circuit.
the total sampling time
delay between the instance at which hold command is initiated and the instance at which O/P starts tracking I/P
the time taken by O/P to settle within the specified 1% error band, that of the I/P
time required by holding capacitor to reach upto the level close to input

⇒ The polar plot of P (jω) = 45° as ω varies from -∞ to ∞ is
a straight line parallel to x-axis
a straight line parallel to y-axis
a line passing through origin and inclined at 45°
a line in first quadrant passing through origin and inclined at 45° to positive x-axis

⇒ If a electromagnetic signal is incident at 0° in a waveguide then at other port of waveguide we will get
zero power
∞ power
depend upon input signal strength
depend on frequency

⇒ The unit of magnetic flux density is
farad/metre
ohm/metre
tesla
ampere/metre

⇒

Assertion (A): FM requires more bandwidth than AM

Reason (R): Wide band FM is used for broadcast transmissions.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ The rule that resistivity of conductors can be separated into two parts viz. temperature independent and temperature dependent is known as
Matthiessen's rule
Debye rule
Curie rule
Onne's rule

⇒ Figure shows the V-i characteristics of a material. The material is likely t
copper
carbon
zinc oxide
rubber

⇒ The units for intrinsic strength of dielectric are
kV
kV/m
A
A/m

⇒

Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

Reason (R): The electron mobility is higher than hole mobility.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ Consider the following statements about conditions that make a metal semiconductor contact rectifying

N type semiconductor with work function φ_s more than work function φ_M of metal
N type semiconductor with work function φ_s less than work function φ_M of metal
P type semiconductor with work function φ_s more than work function φ_M of metal
P type semiconductor with work function φ_s less than work function φ_M of metal.

Of these statements
1 and 3 are correct
2 and 3 are correct
1 and 4 are correct
2 and 4 are correct

⇒ The output of a diode detector contains
D.C. voltage
modulating signal
RF ripple
all of the above

⇒ In 8085 the instruction MOV A, M is an example of
Direct addressing
Immediate addressing
Register addressing
Register indirect addressing

⇒ A small signal source v_i(t) = A cos 20t + B sin10⁶t is applied to a transistor amplifier as shown below. The transistor has β = 150 and h_ie = 3 kΩ. Which expression best approximates V₀(t<
v₀(t) = -1500 (A cos 20t + B sin 10⁶t)
v₀(t) = -150 (A cos 20t + B sin 10⁶t)
v₀(t) = -1500 B sin 10⁶t
V₀(t) = -1500 sin 10⁶t

⇒ For a level input sequential circuit
output in a level only
output is in the pulse form
output may be a pulse or a level form
none of these

⇒
Assertion (A): In SSB, carrier is suppressed by about 45 dB
Reason (R): SSB is standard form for radio communication

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

Users Also Read
Previous Papers

Aptitude

Reasoning

Gen.Knowledge

Speak English

English / Verbal

Online / Mock Test

Vedic Math