Question is ⇒ In the generic microprocessor, Options are ⇒ (A) instruction cycle time period is shorter than machine cycle time period, (B) machine cycle time period is shorter than instruction cycle time period, (C) instruction cycle time period is exactly half of machine cycle time period, (D) instruction cycle time period is exactly equal to machine cycle time period, (E) , Leave your comments or Download question paper.

Question is ⇒ In the generic microprocessor, Options are ⇒ (A) instruction cycle time period is shorter than machine cycle time period, (B) machine cycle time period is shorter than instruction cycle time period, (C) instruction cycle time period is exactly half of machine cycle time period, (D) instruction cycle time period is exactly equal to machine cycle time period, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	In the generic microprocessor
A.	instruction cycle time period is shorter than machine cycle time period [Wrong Answer]
B.	machine cycle time period is shorter than instruction cycle time period [Correct Answer]
C.	instruction cycle time period is exactly half of machine cycle time period [Wrong Answer]
D.	instruction cycle time period is exactly equal to machine cycle time period [Wrong Answer]
View Answer 2 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ What binary number does second row represent?
1111001
1010101
10101010
11101010

⇒ Which of the following material can be used in cable shields?
Copper
Aluminium
Cast iron
Lead

⇒ Which has volatile memory?
Magnetic tape
RAM
Diskette
Hard disk

⇒ Which of the following flip-flop do not have race problem?
T flip-flop
D flip-flop
JK flip-flop
Master-slave flip-flop

⇒ In Fermi-Dirac statistics, the probability of electron occupation of an energy level equal to Fermi level is
0
0.25
0.5
1

⇒ For a system to be designated as hi-fi, the signal to noise ratio should be at least
25 dB
50 dB
75 dB
100 dB

⇒ Sampling frequency
100 Hz
200 Hz
400 Hz
none of these

⇒

Match the following:

	List I		List II
A.	Resistance	1.	M^-1L^-2T⁴I²
B.	Inductance	2.	ML²T^-2I^-2
C.	Capacitance	3.	ML²T^-3I²

A-1, B-2, C-3
A-2, B-1, C-3
A-2, B-3, C-1
A-3, B-2, C-1

⇒ What does the B register contain after the first MOV B, A has been executed?
40 H
60 H
80 H
80 D

⇒ In figure, the transmission parameters are A = C = 1, B = 2 and D = 3. Then Z_{in12/13 Ω
13/12 Ω
3 Ω
4 Ω}

⇒ In Java which operator can be used even if there is a single operand
+
-
*
%

⇒ Which gives minimum probability of error?
ASK
FSK
PSK
DPSK

⇒ If the poles lie in second quadrant, damping ratio is
1
less than 1
zero
more than 1

⇒ Consider the common emitter amplifier shown below with the following circuit parameters: β = 100, g_m = 0.3861 A/V, r₀ = ∞ r_p = 259 Ω, R_s = 1 kΩ, R_B = 93 kΩ, R_C = 250 Ω, R_L = 1 kW, C₁ = ∞ and C₂ = 4.
33.9 Hz
27.1 Hz
13.6 Hz
16.9 Hz

⇒ As compared to a full wave diode rectifier circuit using centre tapped transformer, the bridge diode rectifier circuit has the main advantage of
higher current carrying capacity
higher efficiency
lower ripple factor
lower PIV

⇒

Assertion (A): Klystron amplifiers use one or more intermediate cavities in addition to buncher and catcher cavity.

Reason (R): When one or more intermediate cavities are used the bandwidth can be increased.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct

⇒ In figure, I_D = 4 mA. Then V_{D20 V
10 V
30 V
1 V}

⇒ Consider the differential amplifier shown in figure. (Assume β is very hi
2 mA
1 mA
0.5 mA
3 mA

⇒ For a BJT if β = 50, I_CEO = 3 μA and I_C = 1.2 mA then I_B
24 μA
23 μA
20 μA
10 μA

⇒ Time delay of a TTL standard family is about
180 ns
50 ns
18 ns
3 ns

⇒ Noise which assumes great importance at high frequencies is
flicker noise
Johnson noise
transit-time noise
shot noise

⇒ Almost all resistors are made in a monolithic integrated circuit
during the entire diffusion
while growing the epitaxial layer
during the base diffusion
during the collector diffusion

⇒ Shannon's Law relates
antenna gain to frequency
noise power to bandwidth
information-carrying capacity to S/N ratio
transmission losses to noise

⇒ In broadside array
the principle direction radiation is perpendicular to the array axis and also to the plane containing the array elements
the principle direction radiation is parallel to the array axis and also to the plane containing the array elements
the principle direction radiation is parallel to the array axis and perpendicular to the plane containing the array elements
the principle direction radiation is perpendicular to the array axis and parallel to the plane containing the array elements

⇒ A carrier signal at frequency 100 MHz is frequency modulated with modulation index 2 by a signal at 2 kHz. At what frequencies are the sidebands produced?
102 MHz and 98 Mhz
100 MHz + 2 kHz, 100 MHz - 2 kHz
100 MHz ± Δf_d where f_d is frequency deviation
100 MHz ± 3n kHz, where n is 1, 2, ... S integer

⇒ A variable resistance R and capacitive reactance X_C are fed by an voltage. The current locus is
a semi circle in 4th quadrant
a semi circle in first quadrant
a straight line in 4th quadrant
a straight line first quadrant

⇒ A sine wave with slew rate distortion looks like
step wave
square wave
triangular wave
cosine wave

⇒ Electrostatic voltmeter is suitable only for low voltages.
TRUE
FALSE

⇒ Determine the voltage V_CB in the circuit bel
3.4 V
5.4 V
7.4 V
9.4 V

⇒ For an n-channel JEFT having drain source voltage constant if the gate source voltage is increased (more negative) pinch off would occur for
high values of drain current
saturation values of drain current
zero drain current
gate current equal to the drain current