Question is ⇒ In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is, Options are ⇒ (A) P+ -doped, (B) n+ -doped, (C) used to reduce the parasitic capacitance, (D) located in the emitter region, (E) , Leave your comments or Download question paper.

Question is ⇒ In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is, Options are ⇒ (A) P+ -doped, (B) n+ -doped, (C) used to reduce the parasitic capacitance, (D) located in the emitter region, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
A.	P⁺ -doped [Wrong Answer]
B.	n⁺ -doped [Wrong Answer]
C.	used to reduce the parasitic capacitance [Correct Answer]
D.	located in the emitter region [Wrong Answer]
View Answer 1 -5 Explanation:- Answer : C Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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