Question is ⇒ In the CE equivalent circuit of figure, the voltage gai, Options are ⇒ (A) 200, (B) 40, (C) 5, (D) 1000, (E) , Leave your comments or Download question paper.

Question is ⇒ In the CE equivalent circuit of figure, the voltage gai, Options are ⇒ (A) 200, (B) 40, (C) 5, (D) 1000, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	In the CE equivalent circuit of figure, the voltage gai
A.	200 [Correct Answer]
B.	40 [Wrong Answer]
C.	5 [Wrong Answer]
D.	1000 [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ In a P-N-P transistor, with normal bias
the collector junction has negligible resistance
only holes cross the collector junction
the collector-base junction is reverse biased and the emitter base junction is forward biased
only majority carriers cross the collector junction

⇒ The Hall constant in Si bar is given by 5 x 10³ cm³/ coulomb, the hole concentration in the bar is given by
10⁵/cm³
1.25 x 10¹⁵/cm³
1.5 x 10¹⁵/cm³
1.6 x 10¹⁵/cm³

⇒ A few minutes disturbance in space communications occurs twice a year during Sunblinding when __________ are in line.
Sun and satellite
Sun and Earth station
Satellite and Earth station
Sun, satellite and Earth station

⇒ The storage capacity of DSDD disk and DSHD disk are
1.2 MB each
360 KB each
1.2 MB and 360 KB respectively
360 KB and 1.2 MB respectively

⇒ In a DM system, the granular noise occurs when modulating signal
decrease Rapidly
increase
has high frequency component
change within step size

⇒ In 8085 microprocessor, what is the length of status Word?
6 bits
8 bits
12 bits
16 bits

⇒ For a hollow waveguide, the axial current must necessarily be
combination of conduction and displacement current
conduction current only
time varying conduction current and displacement current
displacement current only

⇒ Above a certain temperature, the specific heat of a metal becomes constant. This temperature is called
Debye temperature
Curie temperature
Neel temperature
Transition temperature

⇒

Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

Reason (R): High reverse voltage causes Avalanche effect.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒

Assertion (A): Boolean expressions can be easily simplified using Karnaugh map.

Reason (R): Karnaugh map can be drawn for minterms as well as max terms.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true

⇒ When an SCR is reverse biased
two junctions are reverse biased and one junction is forward biased.
all the three junctions are reverse biased.
one junction is reverse biased and two junctions are forward biased.
any of the above depending on the magnitude of reverse bias.

⇒ Which of the following sampling frequencies is considered adequate in voice telephony?
4 kHz
8 kHz
16 kHz
32 kHz

⇒ Which DOS command improves memory usage?
MEM MAKER
MOVE
MEM IM
None on the above

⇒ In the above case if the modulating frequency is increased to 20 kHz the bandwidth will be
0.05 MHz
1 MHz
2 MHz
4 MHz

⇒ A basic group B
consists of five super groups
has a frequency range of 60 to 108 kHz
consists of erect channels only
is formed at group translating equipment

⇒ The signal to noise ratio in telemetry should be better than
5 db
10 db
25 db
60 db

⇒ Quartz crystal has
very small Q
small Q
very high Q
Q less than 1

⇒ Which of the following is not a valid real variable in FORTRAN 77?
ANUT
MONEY
A MONEY
BS

⇒ A 1000 kHz carrier wave modulated 40% at 4000 Hz is applied to a resonant circuit tuned to a carrier frequency and having Q = 140. What is the degree of modulation after transmission through this circuit?
0.4
0.2
0.27
0.54

⇒ For a npn BJT transistor f_β is 1.64 x 10⁸ Hz. C_μ = 10^-14 F; C_p = 4 x 10^-13 F and DC current gain is 90. Find f_T and g_m (f_β = cut off frequency, C_μ = capacitance, C_p = parasitic capacitance, g_m = transconductance, f_T = gain BW product)
f_T = 1.47 x 10¹⁰ Hz ; g_m = 38 milli mho
f_T = 1.64 x 10⁸ Hz ; g_m = 30 milli mho
f_T = 1.47 x 10⁹ Hz ; g_m = 38 mho
f_T = 1.33 x 10¹² Hz; g_m = 0.37 m-mho

⇒ Inputs A and B of the given figure are applied to a NAND gate. The output is
from 0 to 6
from 0 to 2
from 0 to 1 and 2 to 3
from 1 to 2 and 3 to 4

⇒ Polystyrene has a relative permittivity of 2.7. If the wave is incident at an angle θ_i of 30° from air into polystyrene, the angle of transmission will be nearly
0.2°
2°
18°
48°

⇒ Which of the following statements is not correct for thermistors?
They have negative temperature coefficient of resistance
The sensing element is made of sintered ceramics, which are oxides of metals in the form of beads
The variation of resistance with temperature is linear
The resistance value at ambient temperature may range from 100 Ω to 100 kΩ

⇒ In a self bias circuit for CE amplifier the collector supply voltage is made twice. The collector current will
decrease
increase
remain the same
increase or decrease

⇒ Maximum power transfer theorem finds application in
power circuits
distribution circuits
communication circuits
both power and communication circuits

⇒ Given a power supply filter circuit, what measurements must be made of determine percentage regulation
current through and voltage across the capacitor
d.c. load voltage and r.m.s. load voltage
current through load and voltage across load resistance
number of turns and gauge of secondary winding of transformer

⇒ The first and the last critical frequency of an RC driving point impedance function must respectively by
a zero and a pole
a zero and a zero
a pole and a pole
a pole and a zero

⇒ As frequency is increased, the skin effect
increases
decreases
remains the same
either (b) or (c)

⇒ Higher order TDM levels are obtained by
forming super master groups
using A law
using μ law
dividing pulse width

⇒ A 16 x 8 ROM stores these words in its first four locations, as given below. Which of this represents 3 CH in hexadecimal?
R₀ = 1110 0010
R₁ = 0101 0111
R₂ = 0011 1100
R₃ = 1011 1111