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Q1. | In memory mapped I/O means that |

A. | an input or output device is treated by the microprocessor as one memory location [Correct Answer] |

B. | input or output devices are treated as distinct [Wrong Answer] |

C. | an address on the address bus may refer either to a memory location or to an I/O device [Wrong Answer] |

D. | none of the above [Wrong Answer] |

View Answer
Explanation:-
Answer : ADiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ Impedance level of Impatt diodes is generally lower than that of Gunn diodes

TRUE

FALSE

⇒ If operator '

*a*' = 1 ∠120° then (1 -

*a*) =

3

3 ∠ - 30°

3 ∠ + 30°

3 ∠60°

⇒ Find

*V*

_{o}(

*t*) for the following circ

0 V

5 V

3 V

2 V

⇒ In a phase shifting transformer the currents in the two stator winding are in phase.

TRUE

FALSE

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Resistance | 1. | M^{-1}L^{-2}T^{2}I^{2} |

B. | Inductance | 2. | ML^{2}T^{-2}I^{-2} |

C. | Capacitance | 3. | M^{-1}L^{-2}T^{4}I^{2} |

D. | Reluctance | 4. | ML^{2}T^{-3}I^{-2} |

A-1, B-2, C-3, D-4

A-2, B-1, C-3, D-4

A-4, B-2, C-3, D-1

A-2, B-4, C-3, D-1

⇒ A device that converts from decimal to binary numbered is called

decoder

encoder

CPU

converter

⇒ The quantum numbers associated with electron motion are designed as

*a, b, c*

*h, k, l*

*n, m, l*

*h, n, l*

⇒

**Assertion (A):** A dynamic RAM chip has much smaller cell than a static RAM chip.

**Reason (R):** In dynamic RAM one bit of information is stored as the charge on a capacitor.

Both A and R are correct and R is correct explanation of A

Both A and R are correct but R is not correct explanation of A

A is correct R is wrong

A is wrong R is correct

⇒ In a four element Yagi-Uda antenna

there is one driven element, one director and two reflectors

there is one driven element, two directors and one reflector

there are two driven elements, one director and two reflectors

all the 4 elements are driven element

⇒ For the discrete time system of the given fig

*y*= 0.5

_{k}*u*-

_{k - 2}*u*- 0.25

_{k}*y*- 1

_{k}*y*= 0.5

_{k}*u*

_{k}_{ - 1}-

*u*- 0.25

_{k}*y*- 1

_{k}*y*= 0.5

_{k}*u*

_{k}- u_{k}_{ - 1}- 0.25

*y*- 1

_{k}*y*= 0.5

_{k}*u*

_{k}_{ - 1}-

*u*

_{k}_{ - 1}- 0.25

*y*- 1

_{k}⇒ The intrinsic impedance of free space

increases with increase of frequency

decreases with increase of frequency

is independent of frequency

none

⇒ If short-circuited and open circuited impedances are 5 ohms and 20 ohms, then characteristic impedance is

1 ohms

10 ohms

25 ohms

100 ohms

⇒ The number of tightly bound electrons in silicon atom are

14

10

6

4

⇒ The logic represented by the abbreviation ECL is

Emitter Coupled Logic

Electron Carrier Logic

Encoding Clock Logic

Electrostatic Channel Logic

⇒ Bandwidth for practical PCM system is (where

*n*is no. of channels, N length of PCM codes)

2

*n*N

*f*Hz

_{m}4

*n*

*f*Hz

_{m}2

*n*

*f*

_{m}(N + 1)

*f*

_{m}⇒ The advantage of transistor over vacuum tube is

no heat is required

small size and light in weight

very low power consumption

all of the above

⇒ The complicated shapes in the polar plots are only due to time constants in the numerator of transfer functions.

TRUE

FALSE

⇒ Which of the following circuit would be preferred for a 355 KHz IF amplifier?

Resistance loaded

Double tuned transformer

Video amplifier

Class C

⇒ The resonant frequency of a series resonant circuit is

arithmetic mean of half power frequencies

independent of inductance of the circuit

independent of capacitance of the circuit

geometric mean of half power frequencies

⇒ For BJT transistor. The maximum power dissipation is specified as 350 mW if ambient temperature is 25°C. If ambient temperature is 60°C the maximum power dissipation should be limited to about

100 mW

250 mW

450 mW

600 mW

⇒ Decimal 1932 when converted into 10's complement will become

8868

8060

8608

8806

⇒ If

*e*is the charge of an electron, R is the radius of its orbit and ω is the angular velocity of electron, the magnetic dipole moment μ

_{m}of the orbit is |μ

_{m}| =

*e*ωR

^{2}.

TRUE

FALSE

⇒ In p mode of operation of magnetron the spikes due to phase focussing effect rotate at an angular velocity corresponding to

one pole/cycle

two pole/cycle

four pole/cycle

six pole/cycle

⇒ The frequency of oscillation in a backward wave oscillator can be changed by

varying the voltage which controls beam velocity

varying the beam current

both by varying the beam current and by light varying the voltage which controls beam velocity

changing the rate of thermionic emission

⇒ The reverse breakdown voltage of a diode depends on the extent of doping.

TRUE

FALSE

⇒ The input to an op-amp integrating amplifier is a constant voltage. The output will be

a constant voltage

a sawtooth wave

a ramp

ac voltage

⇒ A narrow band FM does not have the following feature

it has two sidebands

both sideband equal in magnitude

both sideband have same Phase Difference

it does not show Amplitude variation

⇒ If the Nyquist plot does not encircle the (-1 +

*j*0) point the system is always stable.

TRUE

FALSE

⇒ A 12 bit ADC is used to convert analog voltage of 0 to 10 V into digital. The resolution is

2.44 mV

24.4 mV

1.2 V

none of the above

⇒ For the system in the given figure, the characteristic equation

*s*

^{2}+

*s*(3 + 6

*a*) + 6 = 0

*s*

^{2}+

*s*(3 + 12

*a*) + 12 = 0

*s*

^{2}+ 3

*s*= 0

*s*

^{2}+ 6

*s*= 0