Assertion (A): For a magnetic material M = (μ_r - 1) H, where M is magnetic dipole moment/m³, H is field intensity A/m and μ_r is relative permeability.

Reason (R): μ_r can have any value from 0 to hundreds of thousands.

Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

Reason (R): The electron mobility is higher than hole mobility.

Assertion (A): The transient performance of a control system is generally analysed by using unit step function as reference input.

Reason (R): Impulse is the most common input found in practice.

1. N type semiconductor with work function φ_s more than work function φ_M of metal
2. N type semiconductor with work function φ_s less than work function φ_M of metal
3. P type semiconductor with work function φ_s more than work function φ_M of metal
4. P type semiconductor with work function φ_s less than work function φ_M of metal.

Assertion (A): Magnetic susceptibility of diamagnetic materials is much less than that of paramagnetic materials.

Reason (R): For diamagnetic as well as paramagnetic materials, μ_r is nearly equal to 1.

Match the following:

Assertion (A): CMOS devices have very high speed.

Reason (R): CMOS devices have very small physical size and simple geometry.