Question is ⇒ In a NAND SR latch S = R = 1. Then, Options are ⇒ (A) Q = 1, Q = 0, (B) Q = 0, Q = 1, (C) both Q and Q will be same as before, (D) the latch will be set, (E) , Leave your comments or Download question paper.

Question is ⇒ In a NAND SR latch S = R = 1. Then, Options are ⇒ (A) Q = 1, Q = 0, (B) Q = 0, Q = 1, (C) both Q and Q will be same as before, (D) the latch will be set, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	In a NAND SR latch S = R = 1. Then
A.	Q = 1, Q = 0 [Wrong Answer]
B.	Q = 0, Q = 1 [Wrong Answer]
C.	both Q and Q will be same as before [Correct Answer]
D.	the latch will be set [Wrong Answer]
View Answer 2 -3 Explanation:- Answer : C Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒

Assertion (A): Nyquist stability criterion uses the number of encirclements around (-1 + j0) point in GH plane to determine stability

Reason (R): The (-1 + j0) point in the s plane lies in the Nyquist path.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
R is correct but A is wrong

⇒

Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒

Match the following:

	List I (Circuit)		List II (Characteristics)
A.	Darlington pair	1.	uses pnp and npn transistors used as power amplifier
B.	CB amplifier	2.	Voltage gain nearly 1 and high input impedance
C.	Cascade amplifier	3.	low input impedance used for high frequency isolation

A-1, B-2, C-3
A-2, B-3, C-1
A-2, B-1, C-3
A-3, B-1, C-2

⇒ Ebers Moll model is applicable to
bipolar Junction transistor
N MOS transistor
unipolar junction transistor
field effect transistor

⇒ The statement that the line integral of magnetic field about any closed path is exactly equal to the direct current enclosed by that path, is known as
Ampere's circuital law
Coulomb's law
Electrostatic's theory
None of the above

⇒ An intrinsic semiconductor (intrinsic electron density = 10¹⁶ m^-3) is deped with donors to a level of 10²² m^-3. What is the hole density assuming all donors to be ionized?
10⁷ m^-3
10⁸ m^-3
10¹⁰ m^-3
10⁶ m^-3

⇒ A transistor has two p-n junctions. The batteries should be connected such that
both junctions are forward biased
both junctions are reverse biased
one junction is forward biased and the other is reverse biased
either (a) or (b)

⇒ The phase angle of lead circuit is
between 0 and -90°
between 0 and +90°
90°
more than 90°

⇒ When a complex signals is used to frequency modulate a carrier, the resulting sideband distribution is
symmetrical about the carrier
not necessarily symmetrical about the carrier
decided by the predominant sidebands
none of the above

⇒ Which characteristics of a memory chip is called dc characteristics?
Organisation
Timing characteristics
Physical dimensions
Power consumption and bus loading

⇒ For an ideal antenna, numerical value of directivity must be
∞
0
1
any value

⇒ In a CE amplifier
both ac and dc load lines have the same slope
the ac load line has more slope than dc load line
the ac load line has less slope than dc load line
the two load lines may have slope more than the other

⇒ JFET is also known as
linear device
square law device
inverse law device
logarithmic law device

⇒ In a 4 bit weighted resistor D/A converter, the resistor value corresponding to LSB is 32 kΩ. The resistor value corresponding to MSB will be
32 KΩ
16 KΩ
8 KΩ
4 KΩ

⇒ Which of the following is equivalent to AND-OR realization?
NAND-NOR
NOR-NOR
NOR-NAND
NAND-NAND

⇒ Companding is used in PCM to
reduce bandwidth
increasing S/N ratio
get almost uniform S/N ratio
increase bandwidth

⇒ The first critical frequency nearest the origin of the complex frequency plane for an RL driving point impedance will be
a zero in left half plane
a zero in right half plane
a pole in left half plane
a pole or zero in left half plane

⇒ An R-C coupled amplifier has mid-frequency gain of 200 and a frequency response from 100 Hz to 20 kHz. A negative feedback network with β = 0.2 is incorporated into the amplifier circuit, the Bandwidth will be
50 kHz
20 kHz
100 kHz
infinite

⇒ A three-section RC phase shift oscillator has R = 10K ohms and C = 0.001 μF. The frequency of oscillations is
1.1 kHz
2.5 kHz
3.3 kHz
6.5 kHz

⇒ The most important primary force of attraction in the formation of solids is
electromagnetic
electrostatic
quantum-electrostatic
quantum electromagnetic

⇒

Match the following:

	List I (Library function in Pascal)		List II (Type of argument)
A.	ROUND X	1.	X in radians
B.	ABS X	2.	X real
C.	SQR X	3.	X real or integer
D.	SIN X

A-2, B-3, C-3, D-1
A-2, B-3, C-1, D-3
A-3, B-2, C-2, D-1
A-2, B-3, C-2, D-1

⇒ Radio broadcasts are generally
amplitude modulation
frequency modulation
both amplitude and frequency modulation
neither amplitude nor frequency modulation

⇒ The properties of JFET resemble those of
thermionic values
N-P-N transistors
P-N-P transistors
unijunction transistor

⇒ Adder is a combinational logic circuit.
TRUE
FALSE

⇒ Which one of the following type of negative feedback increases the input resistance and decreases the output resistance of an amplifier?
Current series feedback
Voltage series feedback
Current shunt feedback
Voltage shunt feedback

⇒ In a digital voltmeter the oscillator frequency is 400 kHz and the ramp voltage falls from 8 V to 0 V in 20 ms. What is the number of pulses counted by the counter?
800
2000
4000
8000

⇒ Fourier series is applicable for
periodic
finite duration
non periodic
a and b

⇒ Addition of a small amount of antimony to germanium will result in
formation of p-type semiconductor
more free electrons than holes in semiconductor
antimony concentrating on the edges of the crystal
increased resistance

⇒ Germanium and Si phosphorus have their maximum spectral response in the
infrared region
ultraviolet region
visible region
X-ray region

⇒ In active filter circuits, inductances are avoided mainly because they
are always associated with some resistance
are bulky and unsuitable for miniaturisation
are non-linear in nature
saturate quickly