Question is ⇒ In a material, the Fermi level is located between the centre of the forbidden band and the conduction band. Then what is that material?, Options are ⇒ (A) A p-type semiconductor, (B) An n-type semiconductor, (C) An intrinsic semiconductor, (D) An insulator, (E) , Leave your comments or Download question paper.

Question is ⇒ In a material, the Fermi level is located between the centre of the forbidden band and the conduction band. Then what is that material?, Options are ⇒ (A) A p-type semiconductor, (B) An n-type semiconductor, (C) An intrinsic semiconductor, (D) An insulator, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	In a material, the Fermi level is located between the centre of the forbidden band and the conduction band. Then what is that material?
A.	A p-type semiconductor [Wrong Answer]
B.	An n-type semiconductor [Correct Answer]
C.	An intrinsic semiconductor [Wrong Answer]
D.	An insulator [Wrong Answer]
View Answer 2 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ In a resistor the current is i and the voltage is v. The rate of dissipation of heat at any time t is
vi
vit
vt
vit²

⇒ An ideal op-amp has zero slew rate.
TRUE
FALSE

⇒ The frequencies in ultra high frequency range are propagated by means of __________ waves
surface
ground
sky
space

⇒ Distances near the skip distance should be used for sky-wave propagation
to avoid the Faraday effect
to avoid tilting
to prevent sky-wave and upper ray interference
so as to exceed the critical frequency

⇒ For the K map of the given figure the simplified Boolean expressio
A B + A B
B
A
AB

⇒

Assertion (A): For best results the system of a D'Arsonval galvanometer should be slightly under damped.

Reason (R): Degree of damping affects the time taken by the instrument to come to final position.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true R is false
A is false R is true

⇒ Three impedances (3 + j 4) Ω each are connected in star. The impedances of equivalent delta circuit will be
3 - j 4 Ω each
9 + j 12 Ω each
9 - j 12 Ω each
3 + j 4, 3 - j 4 and 4 - j 3 Ω

⇒ Find R_{AB2 Ω
1.5 Ω
3 Ω
None of the above}

⇒ High frequency waves are
absorbed by the F₂ layer
reflected by the D layer
affected by the solar cycle
none of the above

⇒

Match the following:

	List I		List II
A.	Digital counter	1.	Measurement of harmonics
B.	Schering Bridge	2.	Measurement of frequency
C.	Meggar	3.	Measurement of loss angle of dielectric
D.	Spectrum analyser	4.	Measurement of insulation resistance

A-1, B-2, C-3, D-4
A-4, B-3, C-2, D-1
A-2, B-3, C-4, D-1
A-4, B-1, C-3, D-2

⇒ In a TV receiver the video IF amplifier provides a gain of about
5 dB
20 dB
60 dB
200 dB

⇒ Radar principle is used in
detection of aircraft
burglar alarms
garage door openers
all of the above

⇒ FORTRAN expression for 3b²-5a² is
SQRT (3 * B ** 2 - 5 * A ** 2)
SQRT 3 * B ** 2 - 5 * A ** 2
SQRT (3 * b ** 2 - 5 * a ** 2)
SQRT (3 * B ** 2) - SQRT (5 * A **2)

⇒ The energy of one quantum of light equal to hf.
TRUE
FALSE

⇒ A coaxial line has L = 500 nH/m and C = 50 pF/m. The characteristic impedance is
500 Ω
250 Ω
100 Ω
50 Ω

⇒ In a microwave power measurement using bolometer, the principle of working is variation of
inductance with absorption of power
resistance with absorption of power
capacitance with absorption of power
cavity dimension with heat generated by power

⇒ A carrier is simultaneously modulated by two sine waves having modulation indices of 0.4 and 0.3. The total modulation index will be
0.1
0.7
0.5
0.35

⇒ The drain characteristics of JFET in operating region, are
inclined upwards
almost flat
inclined downwards
inclined upwards or downwards

⇒ The conductivity of an intrinsic semiconductor is
generally less than that of a doped semiconductor
given by σ₁ = en_i (μ_n - μ_p)
given by σ₁ = en_i (μ_p + μ_n)
given by σ₁ = n_i (μ_n + μ_p)

⇒ The signals in 8086 are in maximum mode when
MN / MX pin is tied to V_cc
MN / MX Pin is grounded
MN / Mx pin is left open
none of the above

⇒ High cut off frequency can be expected in case of
common-base
common-emitter
common-collector
all of the above

⇒ The first contribution to logic was made by
George Boole
Copernicus
Aristotle
Shannon

⇒ For matching over a range of frequencies in a transmission line it is best to use
a balun
a broad band directional coupler
double stub
a single stub of adjustable position

⇒ The output y(t) of a linear time invariant system is related to its input x(t) by the following equation y(t) = 0.5x(t - t_d + 1) + x(t - t_d) + 0.5 x(t - t_d + 7). The filter transfer function H(ω) of such a system is given by
(1 + cos ωt)e^-jωt d
(1 + 0.5 cos ωt)e^-jωt d
(1 + cos ωt)e^jωt d
(1 - 0.5 cos ωt)e^-jωt d

⇒ Medium scale integration refers to ICs with
more than 12 but less than 30 gates on the same chip
more than 50 gates on the same chip
more than 20 but less than 100 gates on the same chip
more than 12 but less than 100 gates on the same chip

⇒ A generator is feeding power to a transmission line of characteristic impedance Z₀. The line is terminated in impedance Z_L. Standing waves will be set up if
Z_L = Z₀
Z_L < Z₀
Z_L > Z₀
both (b) and (c)

⇒ In a N-type semi-conductor, the concentration of minority carriers is mainly depends on
the number of acceptor atoms
the number of donor atoms
the extent of doping
the temperature of the material

⇒

Assertion (A): CMOS devices have very high speed.

Reason (R): CMOS devices have very small physical size and simple geometry.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true

⇒ Consider the frequency modulated signal 10 cos (2p x 10⁵t + 5 sin (2p x 1500t) + 7.5 sin (2p x 1000t) with carrier frequency of 10⁵Hz. The modulation index is
12.5
10
7.5
5

⇒ A radio frequency signal contains the following three frequencie
Push pull amplifier
Wideband amplifier
Audio frequency amplifier
Tuned voltage amplifier