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Q1. | In a Hurwitz polynomial |

A. | all coefficients are non-negative [Wrong Answer] |

B. | both the odd and even parts have roots on jω axis [Wrong Answer] |

C. | the continued fraction expansion is the ratio of odd to even parts of a Hurwitz polynomial yields all positive quotient terms [Wrong Answer] |

D. | all of the above [Correct Answer] |

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Explanation:-
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**Also Read Similar Questions Below :**

⇒ The number of thyristors in a single phase fully controlled bridge rectifier is

16

8

4

2

⇒ According to CCIR standards, the Vestigial Sideband (VSB)

video frequencies upto 4 MHz are transmitted

video frequencies upto 5 MHz are transmitted

video frequencies upto 5.5 MHz are transmitted

video frequencies upto 6 MHz are transmitted

⇒ Thermal runaway is not possible in FET, because as the temperature of FET increases.

the mobility decreases

the transconductance increases

impedance of the source

power dissipation in the chip

⇒ Which of these instrument does not have a control spring?

Moving iron ammeter

PMMC ammeter

Electrostatic voltmeters

Power factor meter

⇒ Two similar coils have self inductance of 1 mH each. Coefficient of coupling is 0.5. The mutual inductance M is

0.25 mH

0.5 mH

0.707 mH

1 mH

⇒ The distance between maxima and minima of a standing wave is

λ/4

λ/2

λ

2λ

⇒ Skip distance depends on time of day and angle of incidence.

TRUE

FALSE

⇒

**Assertion (A):** The phenomenon of differential mobility is called transferred electron effect.

**Reason (R):** GaAs exhibits transferred electron effect.

Both A and R are correct and R is correct explanation of A

Both A and R are correct but R is not correct explanation of A

A is correct but R is wrong

A is wrong but R is correct

⇒ Compared to a

*p-n*junction with N

_{A}= N

_{D}= 10

^{14}/cm

^{3}, which one of the following statements is TRUE for a

*p-n*junction with N

_{A}= N

_{D}= 10

^{20}/cm

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Reverse breakdown voltage is lower and depletion capacitance is lower

Reverse breakdown voltage is higher and depletion capacitance is lower

Reverse breakdown voltage is lower and depletion capacitance is higher

Reverse breakdown voltage is higher and depletion capacitance is higher

⇒ Which of the following statements about the matched filter in a communication receiver are correct?

- Its impulse response depends on the signed shape
- It maximizes the SNR at the detection shape.
- It produces ISI.
- It may produce phase error if synchronization is improper.

1 and 4 only

1 and 2 only

2, 3 and 4

1, 2 and 4

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | TTL | 1. | Low propagation delay |

B. | ECL | 2. | Low power consumption |

C. | MOS | 3. | High packing density |

D. | CMOS | 4. | Saturated bipolar logic |

A-4, B-1, C-3, D-2

A-4, B-3, C-1, D-2

A-4, B-3, C-2, D-1

A-3, B-1, C-4, D-2

⇒ How many roots with positive real parts do the equation

*s*

^{3}+

*s*

^{2}-

*s*+ 1 = 0 have?

Zero

One

Two

Three

⇒ Which op-amp circuit uses a resistance in series with input and capacitor in feedback path?

Differentiating amplifier

Integrating amplifier

Logarithmic amplifier

Exponential amplifier

⇒ A half wave diode rectifier and full wave diode bridge rectifier both have an input frequency of 50 Hz. The frequencies of outputs respectively are

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50 Hz and 100 Hz

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50 Hz each

⇒ Consider the following stateme

1 and 2

2 and 3

3 and 4

4 and 5

⇒ The characteristic equation of flip-flop gives the next state Q

_{N + 1}in terms of present state Q

_{N}and the inputs. Which one of the following is the characteristic equation of J - K flip-flop?

Q

_{N+1}= JQ

_{N}+ KQ

_{N}

Q

_{N+1}= J + KQ

_{N}

Q

_{N+1}= KQ

_{N}+ JQ

_{N}

Q

_{N+1}= K + JQ

_{N}

⇒ Iron has a body centred cubic structure.

TRUE

FALSE

⇒ The Nyquist plot of a stable, transfer function

*G*(

*s*) is shown in the figure. We are interested in the stability of the closed loop system in the feedback configuration sh

6 dB and 180°

3 dB and 180°

6 dB and 90°

3 dB and 90°

⇒ A linear system is characterized by H(ω) = B

*e*

^{-2ω2}the system is physically

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realizable

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⇒ A 1000

*k*H

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*z*is applied to a resonant circuit tuned to a carrier frequency and having

*Q*= 140. What is the degree of modulation after passing the wave through this circuit?

0.4

0.2

0.27

0.554

⇒ The counter in the given figur

Mod 3

Mod 6

Mod 8

Mod 7

⇒ In a horizontal polarized wave

magnetic field is perpendicular to ground

magnetic field component is parallel to ground

electric field component is perpendicular to ground

electric field is parallel to ground

⇒ As the magnitude of reverse bias is increased, the capacitance of varactor diode

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decreases

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first decreases then increases

⇒ Minimum number of J-K flip-flop needed to construct a

*BCD*counter is

2

3

4

5

⇒ In a FM waveform, the side bands are spaced at intervals equal to

four times the modulating frequency

twice the modulating frequency

half the modulating frequency

modulating frequency

⇒ Pirani gauge is used to measure

very low pressure

high pressure

pressure in the range of 1 atmosphere

fluid flow

⇒ As compared to TTL, CMOS logic has

higher speed of operation

higher power dissipation

smaller physical size

all of the above

⇒ The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplificat

*AB*

*BC*

*CD*

*BD*

⇒ Find R

_{L}for maximum power tran

3 Ω

1.125 Ω

4.17 Ω

none

⇒ An antisymmetric filter having odd number of coefficient may have a performance as

low pass

high pass

band pass

all pass