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Q1. | In a clocked latch, clock drives |

A. | R NAND gate [Wrong Answer] |

B. | S NAND gate [Wrong Answer] |

C. | both R and S NAND gates [Correct Answer] |

D. | either R or S NAND gates [Wrong Answer] |

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Explanation:-
Answer : CDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ In a purely inductive ac circuit the power curve is a sinusoid of the same frequency as the voltage.

TRUE

FALSE

⇒ The contents of the commands register are 23 H. Then port C

is an input port

is an output port

is both input as well as output port

none of the above

⇒ In a class C operation V

_{CC}= 40 V and V

_{CE(sat)}= 0.4 V. The efficiency is

0.9

0.495

0.01

0.005

⇒ In a material, the Fermi level is located between the centre of the forbidden band and the conduction band. Then what is that material?

A

*p*-type semiconductor

An

*n*-type semiconductor

An intrinsic semiconductor

An insulator

⇒ Three cascaded stages have gains of 10, 20 and 25. The overall gain will be

10

55

500

5000

⇒ An antenna operates effectively when its dimensions are

of the order of magnitude of wavelength to be transmitted

very small than the magnitude of wavelength to be transmitted

very large than the magnitude of wavelength to be transmitted

either (a) or (b)

⇒ The slope of log magnitude asymptote changes by - 40 dB/ decade at a certain frequency and the error between asymptote and actual curve is - 6 dB. This means that

a double pole is present

a pair of complex conjugate poles is present

either a double pole or a pair of complex conjugate poles is present

either a pole or zero at that frequency is present

⇒ The open loop gain of an amplifier is 50 but is likely to change by 20%. If negative feedback with β = 0.1 is used, the change in gain will be about

0.2

0.1

0.04

0.0005

⇒ One can format a disc using window explorer.

TRUE

FALSE

⇒ Among the logic families, the family which can be used at very high frequency greater than 100 MHz in a 4 bit synchronous counter is

TTL

CMOS

ECL

TTLLS

⇒ The early effect in a BJT is caused by

fast turn on

fast turn off

large collector base reverse bias

large emitter base forward bias

⇒ Which of the following can be operated with positive as well as negative gate voltage?

JFET

Both JFET and MOSFET

MOSFET

Neither JFET nor MOSFET

⇒ A step voltage E is applied to an R-L series circuit. At

*t*= 0, the current in the circuit is

E/R

E/L

infinity

zero

⇒ The Hilbert transform of cos ω

_{1}

*t*+ sin ω

_{2}

*t*is

sin ω

_{1}

*t*+ cos ω

_{2}

*t*

sin ω

_{1}

*t*- cos ω

_{2}

*t*

cos ω

_{1}

*t*- cos ω

_{2}

*t*

sin ω

_{1}

*t*+ sin ω

_{2}

*t*

⇒ In a resistance loaded, RC coupled amplifier the d.c. component is blocked by

Transistor

C

_{C}

R

_{B}

R

_{C}

⇒ 5 skilled workers can build a wall in 20 days; 8 semi-skilled worker can build a wall in 25days; 10 unskilled workers can build a wall in 30 days, If a team has 2 killed, 6 semi-skilled and 5 unskilled workers, how long will it take to build the wall?

20 days

18 days

16 days

15 days

⇒ In communication receivers the fidelity is provided by

audio stage

detector range

mixer stage

all of the above

⇒ The relation between bandwidth B, modulating frequency

*f*and frequency deviation Δ

_{m}*f*for a sinusoidally modulated FM signal is

B = Δ

*f*+

*f*

_{m}B = 2(Δ

*f*+

*f*)

_{m}B =

*f*- Δ

_{m}*f*/

B = 2(

*f*- Δ

_{m}*f*)

⇒ The residual resistivity of a binary alloy at 0 K is

sum of residual resistivities of component metals

difference of residual resistivities of component metals

product of residual resistivities of component metals

dependent on the concentration of minor component in the alloy

⇒ Consider the following statements regarding an antenna:

- It is a transducer
- Its performance is essentially frequency sensitive
- It is a reciprocal device
- With increase in its effective aperture area, width of the radiated beam increases.

1, 2 and 3

1, 2 and 4

2 and 3 only

1 and 4 only

⇒

Match the following:

List I (Transmission system) | List II (Mode) | ||
---|---|---|---|

A. | Rectangular waveguide | 1. | TE/TM |

B. | Circular waveguide | 2. | TEM |

C. | Coaxial line | 3. | Quasi TEM |

D. | Microstrip line |

A-1, B-1, C-2, D-3

A-1, B-2, C-2, D-3

A-2, B-2, C-3, D-3

A-3, B-1, C-2, D-2

⇒ The disturbance from adjacent power lines is known as

cross talk

cross fire

inductive disturbance

none of the above

⇒ The r.m.s. value of a half-wave rectified current is 100 A. Its value for full-wave rectification would be __________ amperes.

141.4

200

200/p

40/p

⇒ In which of the following 8085 instructions is the 8 bit number in accumulator adjusted to form two four bit BCD numbers

`DAD `*rp*

`DAA`

`DCX `*rp*

`ADC M`

⇒ The decimal equivalent of the hexadecimal number (3 E 8)

_{16}is

1000

982

768

323

⇒ If reflection coefficient is 1/5, then corresponding VSWR is given by

1

2

3

42796

⇒ As the area of a public meeting increases the amplifier power output required increases.

TRUE

FALSE

⇒ The number of TV channels which can be accommodated in a spectrum of 300 MHz is about

5

10

50

200

⇒ For K map of the given figure the simplified Boolean expressio

Y = A B C + A B C + A B C

Y = A C + B

Y = A B C + ABC

Y = A B C + AB C + ABC

⇒ Binary 1000 will be the result of which of the following?

Binary 1000 - 100

Binary 1011 - 1111

Binary 1111 - 111

Binary 11111 - 1111