Question is ⇒ If Y(s) = 1 + s, the network has, Options are ⇒ (A) 1 Ω resistor and 1 F capacitor in series, (B) 1 Ω resistor and 1 F capacitor in parallel, (C) 1 Ω resistor and 1 H inductor in series, (D) 1 Ω resistor and 1 H inductor in parallel, (E) , Leave your comments or Download question paper.

Question is ⇒ If Y(s) = 1 + s, the network has, Options are ⇒ (A) 1 Ω resistor and 1 F capacitor in series, (B) 1 Ω resistor and 1 F capacitor in parallel, (C) 1 Ω resistor and 1 H inductor in series, (D) 1 Ω resistor and 1 H inductor in parallel, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	If Y(s) = 1 + s, the network has
A.	1 Ω resistor and 1 F capacitor in series [Wrong Answer]
B.	1 Ω resistor and 1 F capacitor in parallel [Correct Answer]
C.	1 Ω resistor and 1 H inductor in series [Wrong Answer]
D.	1 Ω resistor and 1 H inductor in parallel [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ An instruction used to set the carry flag in a computer can be classified as
data transfer
arithmetic
Logical
program control

⇒ Superheterodyne receiver can be used in
AM
FM
SSB
All of the above

⇒ The work function of a photo surface whose threshold wave length is 1200 A, will be
0.103 eV
0.673 eV
1.03 eV
1.27 eV

⇒ If antenna diameter is increased four times, the maximum range is increased by a factor of
2
2
4
0.2

⇒ For measuring temperatures below 800°C with high accuracy, the best instrument is
optical pyrometer
thermistor based thermometer
GaAs junction diode thermometer
platinum resistance thermometer

⇒

Assertion (A): At room temperature the fermi level in p type semiconductor lies nearer to the valence band and in n type semiconductor it lies nearer to the conduction band.

Reason (R): At room temperature, the p type semiconductor is rich in holes and n type semiconductor is rich in electrons.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ Binary 1000 will be the result of which of the following?
Binary 1000 - 100
Binary 1011 - 1111
Binary 1111 - 111
Binary 11111 - 1111

⇒ When we use RRC instruction once in 8085, the number is
multiplied by 2
divided by 2
multiplied by 4
divided by 4

⇒ The process of extension of a single-crystal surface by growing a film in such a way that the added atoms form a continuation of the single-crystal structure is called
Ion implantation
Chemical vapour deposition
Electroplating
Epitaxy

⇒

Assertion (A): Ionic solids, in general, have no electrical conductivity.

Reason (R): In ionic solids, electrons are tightly bound to the nucleus.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not correct explanation of A
A is true but R is false
A is false but R is true

⇒ Ferromagnetic materials show hysteresis in B - H characteristic. As the magnetic field in increased slowly from zero value, what is the first process which sets the material to give net magnetization?
Growth of favourably oriented domains at the cost of other domains by reversible boundary displacements
Growth of favourably oriented domains at the cost of other domains by irreversible boundary displacements
Domain wall orientation
A combination of processes (a) and (c) above

⇒ If input ac is 10 V_rms, then maximum voltage that will appear across the diode of a half wave rectifier with a capacitor I/P filter will be
10 V
14 V
20 V
28 V

⇒ Thermal noise has a power spectral density which is quite uniform upto frequencies in the order of
100 Hz
10⁶ Hz
10⁹ Hz
10¹³ Hz

⇒ India's Polar Satellite Launch vehicle (PSLV) to be ready in 1991 is designed to launch 1000 kg spacecraft into __________ orbit.
geostationary
equatorial
polar
sun-synchronous polar

⇒ The power gain of a half-wave dipole with respect to an isotropic radiator is
2.15 db
3 db
4.15 db
6 db

⇒ In low power factor wattmeter, the pressure coil is connected
to the supply side of current coil
to the load side of current coil
in either (a) or (b)
across the mains

⇒ The low pass filter characteristic shown in figure realiza
TRUE
FALSE

⇒ For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in intensity of optical illumination results in
a change in o.c voltage
a change in s.c current
decrease in resistance
increase in resistance

⇒ Short circuited stubs are preferred to O.C stubs because
O.C stubs are incapable of giving full range of reactances
O.C stubs are liable to radiate
O.C stubs are difficult to make and connect
none of the above

⇒ Which of the following is the least important consideration while selecting a logic technology?
Power dissipation
Noise immunity
Number of pins
Cost

⇒ The amplitude of a modulated RF aerial current is 6 A on the peaks of modulation and 4 A on the troughs of modulation. The value of carrier amplitude is
5
15
20
30

⇒

Assertion (A): In CE connection of n-p-n transistor. V_CE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ Which one of the following is not necessarily an advantage of the phase cancellation method of obtaining SSB over the filter method?
It is possible to generate SSB at any frequency
SSB with lower audio frequencies present can be generated
Switching from one sideband to other is simpler
There are more balanced modulators; therefore the carrier is suppressed better

⇒

Assertion (A): Feedback control systems offer more accurate control than open loop systems.

Reason (R): The feedback path establishes a link for comparison of input and output and subsequent error correction.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
R is correct but A is wrong

⇒ Consider the following statem
1 alone
2 alone
3 alone
1 and 3

⇒ If the functions w, x, y, z are as foll
w = z x = z
w = z, x = y
w = y
w = y = z

⇒ In radio receivers, the value of IF is
100 kHz
225 kHz
455 kHz
850 kHz

⇒ The attenuation factor in parallel plane guides is given by
a = power lost/power transmitted
a = 2 x power lost/power transmitted
a = power lost per unit length/2 x power transmitted
a is always constant

⇒ A CE amplifier is the most common BJT amplifier.
TRUE
FALSE

⇒ In an n-p-n transistor biased for operation in forward active region
emitter is positive with respect to base
collector is positive with respect to base
base is positive with respect to emitter and collector is positive with respect to base
none of the above